Abstract: An integrated circuit comprises digital circuitry having at least one digital logic cell and at least one skew adjusting cell. The skew adjusting cell is configured to adjust the skew of a signal in the digital circuitry of the integrated circuit to a desired amount. The digital logic cell and the skew adjusting cell are selected from a cell library.

Abstract: A circuit having an enhanced input signal range includes a differential amplifier operative to receive at least first and second signals and to amplify a difference between the first and second signals. The differential amplifier generates a difference signal at an output thereof which is a function of the difference between the first and second signals. The differential amplifier includes an input stage having at least first and second transistors operative to receive the first and second signals, respectively, each of the first and second transistors having a first threshold voltage associated therewith, and a load including at least third and fourth transistors having a second threshold voltage associated therewith, the first threshold voltage being greater than the second threshold voltage.

Abstract: A voltage level translator circuit for translating an input signal referenced to a first voltage supply to an output signal referenced to a second voltage supply includes an input stage for receiving the input signal, the input stage including at least one transistor device having a first threshold voltage associated therewith. The voltage level translator circuit further includes a latch circuit operative to store a signal representative of a logic state of the input signal, the latch circuit including at least one transistor device having a second threshold voltage associated therewith, the second threshold voltage being greater than the first threshold voltage. A voltage clamp circuit is connected between the input stage and the latch circuit. The voltage clamp circuit is operative to limit a voltage across the input stage, an amplitude of the voltage across the input stage being controlled as a function of a voltage difference between the first and second voltage supplies.

Abstract: A differential buffer circuit includes a current source, a current sink, and a switching circuit connected to the current source at a first node and connected to the current sink at a second node. The switching circuit is operative to selectively control a direction of current flowing through differential outputs of the buffer circuit in response to at least a first control signal. The buffer circuit further includes a common mode detection circuit and a common mode control circuit. The common mode detection circuit is operative to detect an output common mode voltage of the buffer circuit and to generate a second control signal representative of the output common mode voltage. The common mode control circuit includes a first terminal connected to the current source and a second terminal connected to the current sink. The common mode control circuit is operative to selectively control the output common mode voltage of the buffer circuit as a function of the second control signal.

Abstract: A circuit for defining a voltage potential of a floating well in which is formed at least one metal-oxide-semiconductor device includes a sense circuit operative to detect a voltage at a node to which the floating well is connected and to generate a control signal indicative of whether the voltage at the node is substantially within a voltage range. A lower value of the voltage range is substantially equal to a threshold voltage below a first supply voltage of the circuit. An upper value of the voltage range is substantially equal to a threshold voltage above the first supply voltage. The circuit for defining the voltage potential of the floating well further includes a voltage generator circuit operative to receive the control signal and to generate a bias signal for setting a voltage potential of the well in response to the control signal, the bias signal being controlled throughout the voltage range.

Abstract: A buffer circuit operative at multiple power supply voltage levels includes first and second buffers, the first buffer being configured for operation with a first voltage source and the second buffer being operative with a second voltage source. The buffer circuit further includes a controllable isolation circuit. An output of the first buffer connects to an external pad of the buffer circuit, and an output of the second buffer connects to the pad via the isolation circuit. The buffer circuit is selectively operative in at least a first mode or a second mode in response to at least a first control signal. The isolation circuit is operative in the first mode to substantially isolate the second buffer from the external pad and is operative in the second mode to connect the output of the second buffer to the external pad.

Abstract: A buffer circuit having enhanced overvoltage protection includes core buffer circuitry couplable to a first voltage source having a first voltage level. The core buffer circuitry is configured to receive a first signal and to generate a second signal which is a function of the first signal. The buffer circuit further includes a protection circuit coupled between the core buffer circuitry and a signal pad. The protection circuit is operative: (i) to clamp the first signal to about the first voltage level when a third signal received at the signal pad exceeds the first voltage level by a first amount; and (ii) to generate the first signal being substantially equal to the third signal when the third signal is less than or substantially equal to the first voltage level.

Abstract: A buffer circuit is configured to generate an output signal which is a function of an input signal received by the buffer circuit, the buffer circuit being selectively operative in one of at least two modes in response to a control signal. In a first mode, the buffer circuit is configured to provide a low output impedance, characteristic of a digital buffer. In a second mode, the buffer circuit is configured to limit an output current of the buffer circuit. The control signal is indicative of a level of the output signal of the buffer circuit.

Abstract: A voltage level translator circuit is selectively operable in one of at least two modes in response to a control signal. In a first mode, the voltage level translator circuit is operative to translate an input signal referenced to a first source providing a first voltage to an output signal referenced to a second source providing a second voltage. In a second mode, the voltage level translator circuit is operative to provide a signal path from an input of the voltage translator circuit to an output thereof without translating the input signal. The control signal is indicative of a difference between the first voltage and the second voltage.

Abstract: A comparator circuit includes a reference generator connecting to a first source providing a first voltage. The reference generator is operative to generate a reference signal and includes a control circuit selectively operable in at least a first mode or a second mode in response to a first control signal, wherein in the first mode the reference signal is not generated, and in the second mode the reference generator is operative to generate the reference signal. The comparator circuit further includes a comparator connecting to a second source providing a second voltage, the second voltage being less than the first voltage. The comparator is operative to receive the reference signal and an input signal, and to generate an output signal which is a function of a comparison between the input signal and the reference signal.

Abstract: A comparator circuit having reduced pulse width distortion includes a differential amplifier operative to receive at least first and second signals and to amplify a difference between the first and second signals. The differential amplifier generates a difference signal at an output thereof which is a function of the difference between the first and second signals. An output stage is included in the comparator circuit for receiving the difference signal and for generating an output signal of the comparator circuit, the output signal being representative of the difference signal, the output stage having a switching point associated therewith. The comparator circuit further includes a voltage source coupled to the output of the differential amplifier. The voltage source is operative to generate a reference signal for establishing a common-mode voltage of the difference signal generated by the differential amplifier.

Abstract: A bias circuit includes a reference generator for generating a bias signal at an output of the reference generator. The reference generator is selectively operable a first mode or a second mode in response to a first control signal applied to the reference generator, wherein in the first mode of operation, the reference generator is disabled, and in the second mode of operation, the reference generator is operative to generate the bias signal. The bias circuit further includes a shunt circuit connected to the reference generator. The shunt circuit is configured to provide a source of current to assist in charging the output of the reference generator to a quiescent operating level during the second mode of operation. The shunt circuit, in response to a second control signal applied thereto, is operable for a selected period time after the reference generator transitions from the first mode of operation to the second mode of operation.

Abstract: When a P-channel pass gate transistor is added in parallel to an N-channel pass gate, the resulting circuit improves overvoltage tolerance of an input buffer. A simple bias circuit including two small transistors controls a gate of this P-channel pass gate transistor in such a way that it is turned OFF when an overvoltage is applied, but turned ON when a normal voltage is applied. Another embodiment has two N-channel devices (M12, M13) coupled in series with each other and one of the N-channel devices (M13) being configured in a “turned off” position, by coupling the source and gate terminals to a ground voltage (VSS) and providing the supply voltage (VDD) at the gate terminal of another N-channel device (M12), whereby the device M12 protects the device M13 from overvoltage.

Abstract: An ESD protection circuit for protecting a circuit from an ESD event occurring between a first voltage supply node and a second voltage supply node associated with the circuit to be protected includes an MOS device having a gate terminal, a first source/drain terminal and a second source/drain terminal. The first source/drain terminal is connected to the first voltage supply node and the second source/drain terminal is connected to the second voltage supply node. The ESD protection circuit further includes a trigger circuit coupled to the gate terminal of the MOS device. The trigger circuit is configured to generate a control signal at the gate terminal of the MOS device for activating the MOS device during the ESD event.

Abstract: A voltage level translator circuit for translating an input signal referenced to a first voltage supply to an output signal referenced to a second voltage supply includes an input stage for receiving the input signal and a latch circuit for storing a signal at an output of the latch circuit which is representative of a logical state of the input signal. The latch circuit includes an input coupled to the input stage. The voltage level translator circuit further includes a feedback circuit coupled between the input and the output of the latch circuit. The feedback circuit is operative to maintain a desired logic state of the voltage level translator circuit when the second voltage supply powers up before the first voltage supply. In this manner, the voltage level translator circuit is configured to provide an output signal having a predictable logic state over a wide variation of PVT conditions and/or voltage supply ramp rates.

Abstract: An integrated circuit comprises digital circuitry having at least one digital logic cell and at least one skew adjusting cell. The skew adjusting cell is configured to adjust the skew of a signal in the digital circuitry of the integrated circuit to a desired amount. The digital logic cell and the skew adjusting cell are selected from a cell library.

Abstract: A buffer design for an integrated circuit that has adjustable slew rate control, yet requires significantly less space to fabricate than does a conventional buffer with slew rate control. A new slew rate control circuit design is added to a Complementary Metal Oxide Semiconductor CMOS buffer to implement slew rate control in the buffer (e.g., selection between a high slew rate and a low slew rate). The new slew rate control circuit requires significantly less space to fabricate, and when applied to each buffer in an given integrated circuit, e.g., input/output buffers that may be placed along the periphery of the integrated circuit, the savings can be extraordinary.

Abstract: A voltage level translator circuit for translating an input signal referenced to a first voltage level to an output signal referenced to a second voltage level includes an input stage for receiving the input signal. The input stage includes at least one transistor device having a first threshold voltage associated therewith. The voltage level translator circuit further includes a latch circuit operative to store a signal representative of a logical state of the input signal. The latch circuit includes at least one transistor device having a second threshold voltage associated therewith, the second threshold voltage being greater than the first threshold voltage. A voltage clamp is operatively connected between the input stage and the latch circuit, the voltage clamp being configured to limit a voltage across the input stage based, at least in part, on a control signal presented thereto.

Abstract: A buffer design for an integrated circuit that not only recognizes, but improves upon the skew problem as described above that is particularly problematic in cases where the output buffer supply voltage is particularly close or the same as the voltage of the signals coming from the core of an IC. Translator-up circuits associated with output buffers are implemented in parallel with respective selective bypass circuits, allowing the translator-up circuit to be inserted into or removed from a signal path based on the voltage level of a signal received from the inner core and the voltage level required by the output buffer. When the voltage level of the “higher” voltage side is equal to the “lower” voltage signal level, the translator-up circuits are bypassed through selection by a selective bypass circuit. Thus, a selective bypass circuit is implemented together with a translator-up circuit to eliminate large signal skew, and to generally speed up circuit performance.

Abstract: Using at best a 2.5V nominal power supply, 3.3V technology can be used to implement a 5V tolerant open drain output buffer. High voltage and/or current tolerance is achieved with only the 2.5V power supply. A p-channel FET transistor is connected between a power supply and a node, which in turn is connected to a node between two series output FET transistors. The first transistor is connected between the PAD and node, and the second transistor is connected between the node and ground. The gate of the second transistor is driven from another node formed between a series string of a p-channel FET transistor and an n-channel FET transistor. The other side of the first transistor is connected to the power supply, and the other side of the second transistor is connected to ground. The gates of the transistors the inverter are tied together and driven by an applied signal.