Abstract: A compensation circuit comprises a reference circuit including a reference NMOS device and a reference PMOS device. The reference circuit is operative to generate a first reference signal and a second reference signal, the first reference signal being a function of at least one of a process characteristic, a voltage characteristic and a temperature characteristic of the reference NMOS device, and the second reference signal being a function of at least one of a process characteristic, a voltage characteristic and a temperature characteristic of the reference PMOS device. The compensation circuit further comprises a control circuit connected to the reference circuit.

Abstract: An integrated circuit die comprises an internal signal pad arranged at a location away from a periphery of the die, a peripheral signal pad arranged proximate the periphery of the die, and a switch coupled between the internal signal pad and the peripheral signal pad. The switch is configurable in at least a first state in which the internal signal pad is not operatively connected to the peripheral signal pad, and a second state in which the internal signal pad is operatively connected to the peripheral signal pad, responsive to a control signal having one of respective first and second signal characteristics. The switch is configured in the first state during normal operation of the integrated circuit die, and is configured in the second state to permit test access to the internal signal pad via the peripheral signal pad.