Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.

Abstract: A sound transducer device includes a multilayer component board having a first side and an opposite second side, and a sound port extending between the first and second sides of the multilayer component board. The sound transducer also includes a MEMS sound transducer die including a suspended membrane structure, wherein the MEMS sound transducer die is arranged at the first side of the multilayer component board such that the suspended membrane structure is in fluid communication with the sound port. The sound transducer also includes a mesh structure for providing an environmental barrier, the mesh structure covering the sound port from either one of the first and second sides of the multilayer component board.

Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 ?m into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.

Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 ?m into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.

Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

Abstract: A MEMS assembly includes a housing having an internal volume V, wherein the housing has a sound opening to the internal volume V, a MEMS component in the housing adjacent to the sound opening, and a layer element arranged at least regionally at a surface region of the housing that faces the internal volume V, wherein the layer element includes a layer material having a lower thermal conductivity and a higher heat capacity than the housing material of the housing that adjoins the layer element.

Abstract: A package comprising a chip carrier, an electronic chip on the chip carrier, a clip on the electronic chip, an encapsulant at least partially encapsulating the electronic chip, and an electrically conductive vertical connection structure provided separately from the clip and electrically connecting the chip carrier with the clip.

Abstract: A MEMS assembly includes a package, wherein the package includes a substrate and a cover element, wherein a through opening is provided in the cover element, a MEMS component within the package on the cover element, an integrated circuit arrangement within the package on the substrate, and a support component within the package on the substrate, wherein the support component on the substrate is electrically coupled, by first electrical connection lines, to the MEMS component on the cover element and is electrically coupled, by second electrical connection lines, to the circuit arrangement on the substrate in order to produce an electrical connection between the MEMS component and the integrated circuit arrangement.

Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.

Abstract: A MEMS assembly includes a package, wherein the package includes a substrate and a cover element, wherein a through opening is provided in the cover element, a MEMS component within the package on the cover element, an integrated circuit arrangement within the package on the substrate, and a support component within the package on the substrate, wherein the support component on the substrate is electrically coupled, by first electrical connection lines, to the MEMS component on the cover element and is electrically coupled, by second electrical connection lines, to the circuit arrangement on the substrate in order to produce an electrical connection between the MEMS component and the integrated circuit arrangement.

Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 ?m into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.

Abstract: A MEMS assembly includes a housing having an internal volume V, wherein the housing has a sound opening to the internal volume V, a MEMS component in the housing adjacent to the sound opening, and a layer element arranged at least regionally at a surface region of the housing that faces the internal volume V, wherein the layer element includes a layer material having a lower thermal conductivity and a higher heat capacity than the housing material of the housing that adjoins the layer element.

Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.

Abstract: The present disclosure relates to an apparatus comprising a substrate, wherein a MEMS module is arranged on a first side of the substrate, the output signal from said MEMS module changing in the event of a change in temperature. Furthermore, the apparatus has a housing structure which is arranged on a first side of the substrate and has a recess in which the MEMS module is arranged. The apparatus also has a layer which is applied to the housing structure and increases the heat capacity of the apparatus. The present disclosure also relates to a method for producing an apparatus of this kind.

Abstract: Embodiments of the present disclosure provide an apparatus for determining a characteristic of a fluid. The apparatus may include a device configured to determine a hydrodynamic pressure of the fluid. The apparatus may further include a sensor configured to determine a hydrostatic pressure of the fluid or at least one component of the fluid. The apparatus may also include a common substrate on which the sensor and the device configured to determine a hydrodynamic pressure of the fluid may be commonly arranged, and an ASIC (Application Specific Integrated Circuit) which may be electrically coupled with at least one of the device or the sensor. The ASIC may be at least partially embedded in the common substrate.

Abstract: Embodiments of the present disclosure provide an apparatus for determining a characteristic of a fluid. The apparatus may include a device configured to determine a hydrodynamic pressure of the fluid. The apparatus may further include a sensor configured to determine a hydrostatic pressure of the fluid or at least one component of the fluid. The apparatus may also include a common substrate on which the sensor and the device configured to determine a hydrodynamic pressure of the fluid may be commonly arranged, and an ASIC (Application Specific Integrated Circuit) which may be electrically coupled with at least one of the device or the sensor. The ASIC may be at least partially embedded in the common substrate.

Abstract: A device package includes a semiconductor device. The semiconductor device is disposed on a substrate. The device package further includes a covering. The covering is disposed on the substrate and surrounds the semiconductor device. The covering includes a void, a first layer, and a second layer. The void is between an interior surface of the covering and the semiconductor device. The first layer has a first electrical conductivity and a first thickness. The second layer is disposed under the first layer. The second layer has a second electrical conductivity and a second thickness. The first electrical conductivity is greater than the second electrical conductivity. The first thickness is less than the second thickness.

Abstract: The present disclosure relates to an apparatus comprising a substrate, wherein a MEMS module is arranged on a first side of the substrate, the output signal from said MEMS module changing in the event of a change in temperature. Furthermore, the apparatus has a housing structure which is arranged on a first side of the substrate and has a recess in which the MEMS module is arranged. The apparatus also has a layer which is applied to the housing structure and increases the heat capacity of the apparatus. The present disclosure also relates to a method for producing an apparatus of this kind.