Abstract: Described are a temperature sensor, a semiconductor device, and a method of measuring a temperature of a sample. One embodiment of the temperature sensor may comprise a probe circuit, the probe circuit having a thermal operational range. The temperature sensor may further comprise a thermal resistor separating the probe circuit from a sample. The temperature sensor may further comprise a heating circuit adapted to maintain the probe circuit within the thermal operational range.

Abstract: A network comprises a plurality of oscillators. The network is configured to control the phase of the plurality of oscillators by thermal coupling through a thermal link.

Abstract: A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

Abstract: Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

Abstract: A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

Abstract: A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

Abstract: Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

Abstract: A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

Abstract: A heat pump system includes a structure, in turn including a solid-state phase change material. The solid-state phase change material has a first phase state and a second phase state dependent on the temperature. A heat source is configured to supply heat to a first area of the structure, thereby creating a first domain having the first phase state and thereby storing latent heat in the first domain. The first domain is separated by domain walls from second domains having the second phase state. A heat sink is configured to receive heat from a second area of the structure. Furthermore, an electrical energy supply is configured to supply an electrical current to the structure, thereby moving the first domain and the corresponding latent heat stored in the first domain along the structure from the first area to the second area. A related thermal computing device, a related method, and a related computer program product are also disclosed.

Abstract: A method and a scanning probe microscope (SPM) for scanning a surface of a material. The method and SPM have a cantilever sensor configured to exhibit both a first spring behavior and a second, stiffer spring behavior. While operating the SPM in contact mode, the sensor is scanned on the material surface and a first spring behavior of the sensor (e.g. a fundamental mode of flexure thereof) is excited by deflection of the sensor by the material surface. Also while operating the SPM in contact mode, excitation means are used to excite a second spring behavior of the sensor at a resonance frequency thereof (e.g. one or more higher-order resonant modes) of the cantilever sensor to modulate an interaction of the sensor and the material surface and thereby reduce the wearing of the material surface.

Abstract: A heat pump system includes a structure, in turn including a solid-state phase change material. The solid-state phase change material has a first phase state and a second phase state dependent on the temperature. A heat source is configured to supply heat to a first area of the structure, thereby creating a first domain having the first phase state and thereby storing latent heat in the first domain. The first domain is separated by domain walls from second domains having the second phase state. A heat sink is configured to receive heat from a second area of the structure. Furthermore, an electrical energy supply is configured to supply an electrical current to the structure, thereby moving the first domain and the corresponding latent heat stored in the first domain along the structure from the first area to the second area. A related thermal computing device, a related method, and a related computer program product are also disclosed.

Abstract: A radiation detector and method and computer program product for detecting radiation. The detector comprises a waveguide structure, a sensing structure comprising a phase change material, an optical transmitter and optical receiver. The optical transmitter transmits an optical sensing signal for receipt at the optical receiver via the waveguide structure. The phase change material comprises a first phase state at a first temperature range and a second phase state at a second temperature range and transitions from the first phase state to the second phase state under exposure of the radiation. The sensing structure is arranged in an evanescent field area of the waveguide structure and provides for an evanescent field of the optical sensing signal a first complex refractive index in the first phase state and a second complex refractive index in the second phase state. The first complex refractive index is different from the second complex refractive index.

Abstract: A sensor and method of making a sensor for detecting an incident signal is provided. The sensor includes a frame, an antenna and a platform configured to detect the incident signal, and a holding arm connected to the frame, the holding arm configured to structurally support the antenna and the platform, and further configured to operably connect the platform to an electronic device external to the frame. The holding arm includes a conductor having an axial length and a plurality of disturbance elements formed along the axial length of the conductor.

Abstract: A sensor apparatus is provided for sensing relative position of two objects. First and second molecular components, each comprising at least one electronic system, are connected to respective objects. The molecular components are arranged in mutual proximity such that an interaction between the electronic systems of respective components varies with relative position of the objects, the interaction affecting an electrical or optical property of the components. A detector detects the property to produce an output dependent on relative position of the objects.

Abstract: The present invention relates a method of producing a data storage medium comprising the steps of: a) coating a layer comprising a polymer material onto at least a part of a template surface thereby to obtain a modified template surface; b) clamping the modified template surface produced in step (a) with a target surface thereby to obtain an assembly; and c) introducing a liquid to an environment of the assembly obtained in step (b) thereby to transfer the layer comprising the polymer material of the modified template surface onto at least an adjacent region on the target surface.

Abstract: An optical spectrometer contains a photodiode and a straining mechanism for imposing adjustable strain on the photodiode. The spectrometer includes a measurement apparatus for measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism. Adjusting the strain allows adjustment of the band gap Eg of the photosensitive region of the photodiode, and this determines the cut-off energy for absorption of photons. Measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism allows study of photons within a desired energy range of the band gap energy corresponding to each strain value.

Abstract: A sensor and method of making a sensor for detecting an incident signal is provided. The sensor includes a frame, an antenna and a platform configured to detect the incident signal, and a holding arm connected to the frame, the holding arm configured to structurally support the antenna and the platform, and further configured to operably connect the platform to an electronic device external to the frame. The holding arm includes a conductor having an axial length and a plurality of disturbance elements formed along the axial length of the conductor.

Abstract: A local probe storage array is provided that includes a substrate, and a polymeric layer over the substrate, the polymeric layer comprising a crosslinking agent comprising at least three alkyne groups.

Abstract: The invention is notably directed to a scanning probe sensor for a scanning probe microscope. The scanning probe sensor comprises a probe tip having a ferromagnetic fluid and a magnetic field generator adapted to generate a magnetic field acting on the ferromagnetic fluid. Furthermore, a sensor controller is provided and configured to control one or more parameters of the magnetic field generator, thereby controlling the shape of the fluid. The invention further concerns a related scanning probe sensor, a related method and a related computer program product.

Abstract: A synapse for a neuromorphic network is provided. The synapse includes a time-delay portion having a first end and a second end, a first actuator located at the first end and in operational contact with the time-delay portion, and a second actuator located at the second end and in operational contact with the time-delay portion. The time-delay portion is formed from a phase change material wherein a change in the material of the time-delay portion alters a propagation time of a signal transmitted from the first actuator to the second actuator.