Abstract: A semiconductor structure includes a nanosheet stack on a substrate. The nanosheet stack has alternating layers of channel nanosheets and sacrificial nanosheets, which are formed between a first source/drain (S/D) region and a second S/D region. The semiconductor structure further includes a gate structure on the nanosheet stack, and a three-dimensional (3D) Dirac energy filter. The three-dimensional (3D) Dirac energy filter is formed on a portion of the substrate located in the first S/D region and includes a portion that contacts the nanosheet stack. A first S/D is on the 3D Dirac energy filter in the first S/D region, and a second S/D is on the substrate of the second S/D region.

Abstract: A cooling system comprises a system heat sink and a first magnetocaloric thermal transport medium. The first magnetocaloric thermal transport medium is connected to the system heat sink. The first magnetocaloric thermal transport medium comprises a semimetal.

Abstract: A tunnel junction including a layer stack, wherein the layer stack comprises a first contact layer, a first topological layer extending on top of the first contact layer, an electrically insulating layer extending on top of the first topological layer, a second topological layer extending on top of the electrically insulating layer, a free ferromagnetic layer extending on top of the second topological layer, and a second contact layer extending on top of the free ferromagnetic layer. Each of the first topological layer and the second topological layer includes a topological material. The first topological layer, the electrically insulating layer, and the second topological layer are engineered to exhibit a variation of magnetoresistance and a variation of intervalley scattering upon changing a magnetic state of the free ferromagnetic layer. The disclosure is further directed to related devices and methods of operation.

Abstract: Described is an integrated circuit device comprising one or more interconnects. Each interconnect of the one or more interconnects can be structured as a stack of layers including distinct topological layers, where each of the distinct topological layers can be a layer of topological material. Any two successive layers of the distinct topological layers can be separated by one or more interfaces, each forming a boundary between two consecutive layers of the stack, where the two consecutive layers can be engineered to preserve topologically protected surface states of each of the any two successive layers of the distinct topological layers.

Abstract: Described are a temperature sensor, a semiconductor device, and a method of measuring a temperature of a sample. One embodiment of the temperature sensor may comprise a probe circuit, the probe circuit having a thermal operational range. The temperature sensor may further comprise a thermal resistor separating the probe circuit from a sample. The temperature sensor may further comprise a heating circuit adapted to maintain the probe circuit within the thermal operational range.

Abstract: A network comprises a plurality of oscillators. The network is configured to control the phase of the plurality of oscillators by thermal coupling through a thermal link.

Abstract: A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

Abstract: Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

Abstract: A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

Abstract: A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

Abstract: Fabricating a crystalline metal-phosphide layer may include providing a crystalline base substrate and a step of forming a crystalline metal-source layer. The method may further include performing a chemical conversion reaction to convert the metal-source layer to the crystalline metal phosphide layer. One or more corresponding semiconductor structures can be also provided.

Abstract: A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

Abstract: A heat pump system includes a structure, in turn including a solid-state phase change material. The solid-state phase change material has a first phase state and a second phase state dependent on the temperature. A heat source is configured to supply heat to a first area of the structure, thereby creating a first domain having the first phase state and thereby storing latent heat in the first domain. The first domain is separated by domain walls from second domains having the second phase state. A heat sink is configured to receive heat from a second area of the structure. Furthermore, an electrical energy supply is configured to supply an electrical current to the structure, thereby moving the first domain and the corresponding latent heat stored in the first domain along the structure from the first area to the second area. A related thermal computing device, a related method, and a related computer program product are also disclosed.

Abstract: A method and a scanning probe microscope (SPM) for scanning a surface of a material. The method and SPM have a cantilever sensor configured to exhibit both a first spring behavior and a second, stiffer spring behavior. While operating the SPM in contact mode, the sensor is scanned on the material surface and a first spring behavior of the sensor (e.g. a fundamental mode of flexure thereof) is excited by deflection of the sensor by the material surface. Also while operating the SPM in contact mode, excitation means are used to excite a second spring behavior of the sensor at a resonance frequency thereof (e.g. one or more higher-order resonant modes) of the cantilever sensor to modulate an interaction of the sensor and the material surface and thereby reduce the wearing of the material surface.

Abstract: A heat pump system includes a structure, in turn including a solid-state phase change material. The solid-state phase change material has a first phase state and a second phase state dependent on the temperature. A heat source is configured to supply heat to a first area of the structure, thereby creating a first domain having the first phase state and thereby storing latent heat in the first domain. The first domain is separated by domain walls from second domains having the second phase state. A heat sink is configured to receive heat from a second area of the structure. Furthermore, an electrical energy supply is configured to supply an electrical current to the structure, thereby moving the first domain and the corresponding latent heat stored in the first domain along the structure from the first area to the second area. A related thermal computing device, a related method, and a related computer program product are also disclosed.

Abstract: A radiation detector and method and computer program product for detecting radiation. The detector comprises a waveguide structure, a sensing structure comprising a phase change material, an optical transmitter and optical receiver. The optical transmitter transmits an optical sensing signal for receipt at the optical receiver via the waveguide structure. The phase change material comprises a first phase state at a first temperature range and a second phase state at a second temperature range and transitions from the first phase state to the second phase state under exposure of the radiation. The sensing structure is arranged in an evanescent field area of the waveguide structure and provides for an evanescent field of the optical sensing signal a first complex refractive index in the first phase state and a second complex refractive index in the second phase state. The first complex refractive index is different from the second complex refractive index.

Abstract: A sensor and method of making a sensor for detecting an incident signal is provided. The sensor includes a frame, an antenna and a platform configured to detect the incident signal, and a holding arm connected to the frame, the holding arm configured to structurally support the antenna and the platform, and further configured to operably connect the platform to an electronic device external to the frame. The holding arm includes a conductor having an axial length and a plurality of disturbance elements formed along the axial length of the conductor.

Abstract: A sensor apparatus is provided for sensing relative position of two objects. First and second molecular components, each comprising at least one electronic system, are connected to respective objects. The molecular components are arranged in mutual proximity such that an interaction between the electronic systems of respective components varies with relative position of the objects, the interaction affecting an electrical or optical property of the components. A detector detects the property to produce an output dependent on relative position of the objects.

Abstract: The present invention relates a method of producing a data storage medium comprising the steps of: a) coating a layer comprising a polymer material onto at least a part of a template surface thereby to obtain a modified template surface; b) clamping the modified template surface produced in step (a) with a target surface thereby to obtain an assembly; and c) introducing a liquid to an environment of the assembly obtained in step (b) thereby to transfer the layer comprising the polymer material of the modified template surface onto at least an adjacent region on the target surface.

Abstract: An optical spectrometer contains a photodiode and a straining mechanism for imposing adjustable strain on the photodiode. The spectrometer includes a measurement apparatus for measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism. Adjusting the strain allows adjustment of the band gap Eg of the photosensitive region of the photodiode, and this determines the cut-off energy for absorption of photons. Measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism allows study of photons within a desired energy range of the band gap energy corresponding to each strain value.