Abstract: A micromechanical component that can be produced in an integrated thin-film method is disclosed, which component can be produced and patterned on the surface of a substrate as multilayer construction. At least two metal layers that are separated from the substrate and with respect to one another by interlayers are provided for the multilayer construction. Electrically conductive connecting structures provide for an electrical contact of the metal layers among one another and with a circuit arrangement arranged in the substrate. The freely vibrating membrane that can be used for an inertia sensor, a microphone or an electrostatic switch can be provided with matching and passivation layers on all surfaces in order to improve its mechanical properties, said layers being concomitantly deposited and patterned during the layer producing process or during the construction of the multilayer construction. Titanium nitride layers are advantageously used for this.

Abstract: The invention relates to a transistor having an emitter (1), a collector (2), and a base layer (3), wherein the emitter (1) extends into the base layer (3), wherein the base layer (3) has an intrinsic region (4) arranged between the emitter (1) and the collector (2), and an extrinsic region (6) that runs between the intrinsic region (4) and a base contact (5), wherein the base layer (3) contains a first doping layer (7) doped with a trivalent doping substance, which extends into the extrinsic region (6) and which is counter-doped by means of a pentavalent counter-doping substance (8) in the region of the emitter (1). The electrical resistance of the base layer (3) can be reduced, in advantageous manner, by means of the first doping layer (7).