Abstract: A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.

Abstract: An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing (20) and a radiation-emitting or radiation-receiving semiconductor chip (10) arranged in the housing (20). Furthermore, the component comprises an optical element (50), which contains a polymer material comprising a silicone. The silicone contains at least 40% by weight of cyclic siloxanes, and at least 40% of the silicon atoms of the cyclic siloxanes are crosslinked with a further silicon atom of the silicon via alkylene and/or alkylarylene groups.

Abstract: A method for producing an optoelectronic device and an optoelectronic device is disclosed. According to at least one embodiment, an optoelectronic device is provided, which comprises a housing, a radiation-emitting or radiation-receiving semiconductor chip which is arranged in the housing, and an optical element which is arranged in a beam path of the device. The optical element comprises an amphiphilic block copolymer which contains polysiloxane as a hydrophobic polymer and a hydrophilic polymer cross-linked therewith. The optical element further comprises thermally conductive nanoparticles which are distributed in the amphiphilic block copolymer and comprise a material which is selected from the group comprising a metal, a metal oxide, a metal hydroxide and a combination thereof.

Abstract: An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.

Abstract: A method for producing an optoelectronic device and an optoelectronic device is disclosed. According to at least one embodiment, an optoelectronic device is provided, which comprises a housing, a radiation-emitting or radiation-receiving semiconductor chip which is arranged in the housing, and an optical element which is arranged in a beam path of the device. The optical element comprises an amphiphilic block copolymer which contains polysiloxane as a hydrophobic polymer and a hydrophilic polymer cross-linked therewith. The optical element further comprises thermally conductive nanoparticles which are distributed in the amphiphilic block copolymer and comprise a material which is selected from the group comprising a metal, a metal oxide, a metal hydroxide and a combination thereof.

Abstract: A method of producing an optoelectronic semiconductor chip includes providing a semiconductor layer sequence with at least one active layer, providing a one-piece conversion medium body, wherein a matrix material is incompletely crosslinked and/or cured, and wherein the conversion medium body exhibits at room temperature a hardness of Shore A 0 to Shore A 35 and/or a viscosity of 10 Pa·s to 150 Pa·s, placing the conversion medium body onto the semiconductor layer sequence such that they are in direct contact with one another, and curing the conversion medium body wherein after curing the hardness of the conversion medium body is Shore A 30 to Shore D 80.

Abstract: An electronic component has a housing body which comprises a semiconductor chip in a recess. The semiconductor chip in the recess is embedded in a casting compound made of a first plastic material having a first glass transition temperature. A cover element made of a second plastic material having a second glass transition temperature is arranged above the recess. The second glass transition temperature is lower than the first glass transition temperature.

Abstract: An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing (20) and a radiation-emitting or radiation-receiving semiconductor chip (10) arranged in the housing (20). Furthermore, the component comprises an optical element (50), which contains a polymer material comprising a silicone. The silicone contains at least 40% by weight of cyclic siloxanes, and at least 40% of the silicon atoms of the cyclic siloxanes are crosslinked with a further silicon atom of the silicon via alkylene and/or alkylarylene groups.

Abstract: A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.

Abstract: A method of producing a parylene coating on at least one surface of at least one component includes providing a first gas containing parylene monomers and depositing the parylene monomers on the at least one surface of the component by supplying the first gas containing the parylene monomers by a first nozzle to the at least one surface, wherein the component is disposed in an environment at atmospheric pressure.

Abstract: A lens includes a main body and a potting material. The main body includes a first major face, a second major face and at least one cavity arranged on the first major face. The potting material is arranged in the cavity and includes at least one diffuser which scatters radiation of at least one wavelength range.

Abstract: An optoelectronic semiconductor device including a carrier substrate and at least one semiconductor chip arranged thereon, wherein the semiconductor chip includes an active layer that generates radiation, conductor tracks electrically contacting the semiconductor chip arranged on the carrier substrate, the semiconductor chip is enclosed in a potting material, and the potting material includes at least a first potting layer, a second potting layer and a third potting layer, which differ from one another in at least one of: their material composition, their optical properties and their chemical properties.

Abstract: An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The semiconductor components each include an active layer for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the semiconductor components that is remote from the carrier substrate. The semiconductor components are provided with an electrically insulating layer having a cutout in a region of the first contact area. Conductive structures are arranged in regions on the insulating layer. One of the conductive structures electrically conductively connects at least the first contact area of a semiconductor component to a further first contact area of a further semiconductor component or to a conductor track of the carrier substrate. A method for producing such a module is also described.

Abstract: An electronic component has a housing body which comprises a semiconductor chip in a recess. The semiconductor chip in the recess is embedded in a casting compound made of a first plastic material having a first glass transition temperature. A cover element made of a second plastic material having a second glass transition temperature is arranged above the recess. The second glass transition temperature is lower than the first glass transition temperature.

Abstract: An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.

Abstract: A component with an optoelectronic semiconductor chip fixed to a connection carrier by a bonding layer and embedded in an encapsulation, wherein a decoupling layer is arranged at least in places between the bonding layer and the encapsulation.

Abstract: A method of producing a parylene coating on at least one surface of at least one component includes providing a first gas containing parylene monomers and depositing the parylene monomers on the at least one surface of the component by supplying the first gas containing the parylene monomers by a first nozzle to the at least one surface, wherein the component is disposed in an environment at atmospheric pressure.

Abstract: An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The radiation-emitting semiconductor components each include an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the radiation-emitting semiconductor components that is remote from the carrier substrate. The radiation-emitting semiconductor components are provided with an electrically insulating layer, which in each case has a cutout in a region of the first contact area. Conductive structures are arranged in regions on the electrically insulating layer.

Abstract: An arrangement and a method for producing such an arrangement serve for generating mixed light. In this case, a semiconductor chip that emits an electromagnetic primary radiation has a luminescence conversion element in the beam path of the primary radiation. Furthermore, the arrangement includes a connecting element and a carrier element, wherein the carrier element carries and shapes the luminescence conversion element and the connecting element.

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or -receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.