Abstract: The invention relates to a method for producing an optical and a radiation-emitting component by a molding process, and to an optical and a radiation-emitting component having well-defined viscosity.

Abstract: A lens includes a main body and a potting material. The main body includes a first major face, a second major face and at least one cavity arranged on the first major face. The potting material is arranged in the cavity and includes at least one diffuser which scatters radiation of at least one wavelength range.

Abstract: A method of producing an optoelectronic semiconductor chip includes providing a semiconductor layer sequence with at least one active layer, providing a one-piece conversion medium body, wherein a matrix material is incompletely crosslinked and/or cured, and wherein the conversion medium body exhibits at room temperature a hardness of Shore A 0 to Shore A 35 and/or a viscosity of 10 Pa·s to 150 Pa·s, placing the conversion medium body onto the semiconductor layer sequence such that they are in direct contact with one another, and curing the conversion medium body wherein after curing the hardness of the conversion medium body is Shore A 30 to Shore D 80.

Abstract: An optoelectronic module is specified, comprising a carrier substrate (1) and a plurality of radiation-emitting semiconductor components (2). The carrier substrate (1) comprises structured conductor tracks. The radiation-emitting semiconductor components (2) each comprise an active layer (2a) suitable for generating electromagnetic radiation, a first contact area (21) and a second contact area (22), wherein the first contact area (21) is in each case arranged on that side of the radiation-emitting semiconductor components (2) which is remote from the carrier substrate (1). The radiation-emitting semiconductor components (2) are provided with an electrically insulating layer (4), which in each case has a cutout in a region of the first contact area (21). Conductive structures (8) are arranged in regions on the electrically insulating layer (4).

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or—receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.

Abstract: An optical element (14) is specified which is suitable for an optoelectronic component and has a carrier part (1) and a beam shaping part (12), wherein the beam shaping part is molded onto the carrier part, or vice versa. A corresponding production method and a composite device comprising the optical element are furthermore specified.

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or-receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or-receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.

Abstract: Phosphor from the class of the oxynitridosilicates, having a cation M which is doped with divalent europium and having the empirical formula M(1-c)Si2O2N2:Dc, where M=Sr or M=Sr(1-x-y)BaYCax with x+y<0.5 is used, the oxynitridosilicate completely or predominantly comprising the high-temperature-stable modification HT.

Abstract: An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.

Abstract: The invention describes a method for producing a light-emitting-diode (LED) light source, particularly comprising mixed-color LEDs, wherein at least a portion of primary radiation emitted by a chip is transformed by luminescence conversion. Said chip comprises a front-side (i.e., the side facing in the direction of radiation) electrical contact to whose surface a luminescence conversion material is applied in the form of a thin layer. Prior to coating, the front-side electrical contact is raised by the application of an electrically conductive material to the electrical contact surface. The method enables specific color coordinates to be adjusted selectively by monitoring the color coordinates (IEC chromaticity diagram) and thinning the layer of luminescence conversion material. In addition, the method is suited in particular for simultaneously producing a plurality of LED light sources from a multiplicity of similar chips in a wafer composite.

Abstract: A luminescence conversion of LED, which uses a blue emitting chip and two illuminating substances, whereby one emits a red and the other a yellow to green. Both illuminating substances are separated upstream from the chip.

Abstract: An optoelectronic component having a basic housing or frame and at least one semiconductor chip, specifically a radiation-emitting or-receiving semiconductor chip, in a cavity of the basic housing. In order to increase the efficiency of the optoelectronic component, reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound filled at least partly into the cavity is provided, the material and the quantity of the filling compound being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas of the filling compound serve as reflector.

Abstract: A coated phosphor, formed by a powder of individual grains of a phosphor as base material, the grains being coated with a coating material. The layer comprises a plurality of individual layers and is particulate in form, the individual primary particles of the layer being at least 5 nm in size. The mean layer thickness is at least 20 nm.

Abstract: An arrangement and a method for producing such an arrangement serve for generating mixed light. In this case, a semiconductor chip that emits an electromagnetic primary radiation has a luminescence conversion element in the beam path of the primary radiation. Furthermore, the arrangement includes a connecting element and a carrier element, wherein the carrier element carries and shapes the luminescence conversion element and the connecting element.

Abstract: A luminescence conversion of LED, which uses a blue emitting chip and two illuminating substances, whereby one emits a red and the other a yellow to green. Both illuminating substances are separated upstream from the chip.

Abstract: A surface-mounted component, comprising an optoelectronic semiconductor chip, a molded body integrally molded onto the semiconductor chip, a mounting area formed at least in places by a surface of the molded body, at least one connection location and side areas of the component which are produced by means of singulation.

Abstract: An optical element (14) is specified which is suitable for an optoelectronic component and has a carrier part (1) and a beam shaping part (12), wherein the beam shaping part is molded onto the carrier part, or vice versa. A corresponding production method and a composite device comprising the optical element are furthermore specified.

Abstract: The invention describes a method for producing a light-emitting-diode (LED) light source, particularly comprising mixed-color LEDs, wherein at least a portion of primary radiation emitted by a chip is transformed by luminescence conversion. Said chip comprises a front-side (i.e., the side facing in the direction of radiation) electrical contact to whose surface a luminescence conversion material is applied in the form of a thin layer. Prior to coating, the front-side electrical contact is raised by the application of an electrically conductive material to the electrical contact surface. The method enables specific color coordinates to be adjusted selectively by monitoring the color coordinates (IEC chromaticity diagram) and thinning the layer of luminescence conversion material. In addition, the method is suited in particular for simultaneously producing a plurality of LED light sources from a multiplicity of similar chips in a wafer composite.

Abstract: An optoelectronic component having a basic housing or frame (12) and at least one semiconductor chip (20), specifically a radiation-emitting or -receiving semiconductor chip, in a cavity (18) of the basic housing. In order to increase the efficiency of the optoelectronic component (10), reflectors are provided in the cavity in the region around the semiconductor chip. These reflectors are formed by virtue of the fact that a filling compound (28) filled at least partly into the cavity (18) is provided, the material and the quantity of the filling compound (28) being chosen in such a way that the filling compound, on account of the adhesion force between the filling compound and the basic housing, assumes a form which widens essentially conically from bottom to top in the cavity, and the conical inner areas (30) of the filling compound serve as reflector.