Abstract: A method of processing data and related apparatuses. The method relies on an optical finite impulse response (FIR) filter. This optical FIR filter comprises several delay stages having weights set in accordance with parameters of a transformation to be applied by the optical FIR filter. Each of the delay stages is configured to impose a delay matched to a given input data period corresponding to a given input sample rate. According to the method, an optical signal is coupled into the optical FIR filter. The optical signal carries a data stream of input samples encoded at the given input sample rate; the data stream represents the data to be processed. Next, output samples are collected from an output data stream carried by an output optical signal obtained in output of the optical FIR filter. A set of output samples are obtained, which are representative of processed data.

Abstract: Embodiments of the present invention provide a computer system, a voltage resistance controlling apparatus, and a method that comprises at least two electrodes on proximal endpoints; a first layer disposed on the at least two electrodes, wherein the first layer is a made of a metal-oxide; a second layer disposed on the second layer, wherein the second first layer is made of an electrically conductive metal-oxide; a forming contact disposed on the second layer, wherein a combination of the forming contact disposed on the first layer disposed on the second layer operatively connects the at least two electrodes; and a computer system operatively connected to the forming contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer respectively and display an overall resistance increase using a user interface.

Abstract: An optical synapse comprises a memristive device for non-volatile storage of a synaptic weight dependent on resistance of the device, and an optical modulator for volatile modulation of optical transmission in a waveguide. The memristive device and optical modulator are connected in control circuitry which is operable, in a write mode, to supply a programming signal to the memristive device to program the synaptic weight and, in a read mode, to supply an electrical signal, dependent on the synaptic weight, to the optical modulator whereby the optical transmission is controlled in a volatile manner in dependence on programmed synaptic weight.

Abstract: An electrical memristive device has a layer structure. The later structure comprises two electrodes and a bilayer material arrangement that connects the two electrodes. The bilayer material arrangement may, for example, be sandwiched by the two electrodes, in direct contact therewith. The bilayer material arrangement includes an HfOy layer, where 1.3±0.1?y<1.9±0.1, as well as a WOx layer in direct contact with the HfOy layer, where 2.5±0.1?x<2.9±0.1. The bilayer arrangement involves sub-stoichiometric layers of HfOy and WOx, where the WOx layer may advantageously have a polycrystalline structure in the monoclinic phase, while the HfOy layer is preferably amorphous.

Abstract: A method, system, and computer program product for using photorefractive material for analog optic storage and other applications of optical neuromorphic systems. The method may include coupling electromagnetic radiation into a first optical input and a second optical input, where the first optical input and the second optical input are part of an integrated optical device, the integrated optical device including: a first optical mode coupler connected to a first pair of optical ports including a first optical input and output; a second optical mode coupler connected to a second pair of optical ports including a second optical input and output, and the first optical mode coupler connected to the second optical mode coupler using a pair of arms (including a photorefractive material). The method may also include obtaining an optical interference pattern in the photorefractive material of each arm of the integrated optical device.

Abstract: Embodiments of the present invention provide a computer system, a voltage resistance controlling apparatus, and a method that comprises at least two electrodes on proximal endpoints; a first layer disposed on the at least two electrodes, wherein the first layer is a made of a metal-oxide; a second layer disposed on the second layer, wherein the second first layer is made of an electrically conductive metal-oxide; a forming contact disposed on the second layer, wherein a combination of the forming contact disposed on the first layer disposed on the second layer operatively connects the at least two electrodes; and a computer system operatively connected to the forming contact, wherein the computer system is configured to apply a predetermined voltage to the first layer and the second layer respectively and display an overall resistance increase using a user interface.

Abstract: An optical synapse comprises a memristive device for non-volatile storage of a synaptic weight dependent on resistance of the device, and an optical modulator for volatile modulation of optical transmission in a waveguide. The memristive device and optical modulator are connected in control circuitry which is operable, in a write mode, to supply a programming signal to the memristive device to program the synaptic weight and, in a read mode, to supply an electrical signal, dependent on the synaptic weight, to the optical modulator whereby the optical transmission is controlled in a volatile manner in dependence on programmed synaptic weight.

Abstract: A method, system, and computer program product for using photorefractive material for analog optic storage and other applications of optical neuromorphic systems. The method may include coupling electromagnetic radiation into a first optical input and a second optical input, where the first optical input and the second optical input are part of an integrated optical device, the integrated optical device including: a first optical mode coupler connected to a first pair of optical ports including a first optical input and output; a second optical mode coupler connected to a second pair of optical ports including a second optical input and output, and the first optical mode coupler connected to the second optical mode coupler using a pair of arms (including a photorefractive material). The method may also include obtaining an optical interference pattern in the photorefractive material of each arm of the integrated optical device.

Abstract: Embodiments are directed to the fabrication of an electro-optical device. The device comprises the forming of an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises selectively re-growing two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices.

Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Abstract: Embodiments of the disclosure are directed to the fabrication of an electro-optical device. The device comprises the forming of an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises selectively re-growing two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices.

Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Abstract: System and method related to photonic computing are provided. A photonic computing system may include an optical interference region and an input waveguide configured to couple an optical input signal to the optical interference region and to create an optical interference pattern in the optical interference region. The interference pattern has an optical power distribution. The photonic computing system may further include a readout unit that is arranged in an inner area of the optical interference region. The readout unit is configured to detect an optical readout signal of the optical power distribution at a readout position of the inner area of the optical interference region. A method is also provided for performing photonic computing.

Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Abstract: System and method related to photonic computing are provided. A photonic computing system may include an optical interference region and an input waveguide configured to couple an optical input signal to the optical interference region and to create an optical interference pattern in the optical interference region. The interference pattern has an optical power distribution. The photonic computing system may further include a readout unit that is arranged in an inner area of the optical interference region. The readout unit is configured to detect an optical readout signal of the optical power distribution at a readout position of the inner area of the optical interference region. A method is also provided for performing photonic computing.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.