Abstract: A method and system for suppressing power signature in a memory device during read operations. A memory array stores data in an even number of cells per bit, such as 2 cells per bit, where complementary data states are stored in each pair of cells. Differential read out of the memory array via the bitlines suppresses power signature because the same power consumption occurs regardless of the data being accessed from the memory array. Data output buffers that provide complementary data to a downstream circuit system are reset to the same logic state prior to every read operation such that only one output buffer (in the complementary output buffer pair) is ever driven to the opposite logic state in each read cycle. Hence the power consumption remains the same regardless of the data states being read out from the memory array and provided by the output buffers.

Abstract: A method and system for suppressing power signature in a memory device during read operations. A memory array stores data in an even number of cells per bit, such as 2 cells per bit, where complementary data states are stored in each pair of cells. Differential read out of the memory array via the bitlines suppresses power signature because the same power consumption occurs regardless of the data being accessed from the memory array. Data output buffers that provide complementary data to a downstream circuit system are reset to the same logic state prior to every read operation such that only one output buffer (in the complementary output buffer pair) is ever driven to the opposite logic state in each read cycle. Hence the power consumption remains the same regardless of the data states being read out from the memory array and provided by the output buffers.

Abstract: A performance characteristic monitoring circuitry includes a first delay circuitry providing a first delay path, where transmission of a data value over that first delay path incurs a first delay that varies in dependence on the performance characteristic. Reference delay circuitry is also included to provide a reference delay path, where transmission of the data value over the reference delay path incurs a reference delay. The reference delay circuitry includes components configured to provide a capacitive loading on the reference delay path in order to produce a self-compensating effect on the reference delay that causes the reference delay to be less sensitive than the first delay to variation in the performance characteristic. Comparison circuitry is then used to generate the output signal of the monitoring circuitry in dependence on a comparison of the first delay and the reference delay.

Abstract: An integrated circuit 2 includes a transistor 26 which has a normal switching speed arising during normal operations of that transistor that apply electrical signals within normal ranges. If it is desired to change the speed of operation of the transistor, then speed tuning circuitry 12 applies a tuning electrical signal with a tuning characteristic outside of the normal range of characteristics to the transistor concerned. The tuning electrical signal induces a change in at least one of the physical properties of that transistor such that when it resumes its modified normal operations the switching speed of that transistor will have changed. The tuning electrical signal may be a voltage (or current) outside of the normal range of voltages applied to the gate of a transistor so as to induce a permanent increase in the threshold of that transistor and so slow its speed of switching. Temperature of a transistor may also be controlled to induce a permanent change in performance/speed.

Abstract: A semiconductor memory storage device for storing data including: a plurality of storage cells, each storage cell including an access control device configured to provide the storage cell with access to or isolation from a data access port in response to an access control signal. Access control circuitry includes: access switching circuitry configured to connect a selected access control line to a voltage source; and feedback circuitry configured to feedback a change in voltage on the access control line to the access switching circuitry. The access control circuitry is configured to respond to a data access request signal to access a selected storage cell connected to a corresponding selected access control line in response to the feedback circuitry providing a feedback signal indicating that the access control line voltage has attained a predetermined value.

Abstract: A memory device includes an array of memory cells arranged into a plurality of rows and columns and having a plurality of word lines and a plurality of bit lines passing through the array. The memory cells in each row are activated via a word line signal on the corresponding word line, and the memory cells in each column are coupled to an associated bit line pair via which data is written into an activated memory cell of the column during a write operation and data is read from the activated memory cell of the column during a read operation. A dummy column of dummy memory cells is provided and includes a plurality of loading dummy memory cells for providing a load to the at least one dummy bit line, and at least one write timing dummy memory cell coupled to a dummy word line.

Abstract: A memory includes an array of memory cells with each memory cell coupled to an associated pair of bit lines. Read control circuitry is configured to activate a number of addressed memory cells in order to couple each addressed memory cell to its associated pair of bit lines. Sense amplifier circuitry is then coupled to the bit lines to determine the data value stored in each addressed memory. In a speculative read mode of operation, the sense amplifier circuitry evaluates the differential signals. Error detection circuitry is then used to capture the differential signals on the associated pair of bit lines for each addressed memory cell, and to apply an error detection operation to determine if the differential signals as evaluated by the sense amplifier circuitry had not developed to the necessary degree and, in that event, an error signal is asserted.

Abstract: Techniques for providing a direct injection semiconductor memory device are disclosed. In one exemplary embodiment, the techniques may be realized as a direct injection semiconductor memory device including a plurality of memory cells arranged in an array of rows and columns. At least one of the plurality of memory cells may include a first region coupled to a respective bit line of the array, a second region coupled to a respective source line of the array, a body region spaced apart from and capacitively coupled to a respective word line of the array, wherein the body region may be electrically floating and disposed between the first region and the second region, and a third region coupled to a respective carrier injection line of the array, wherein the respective carrier injection line may be one of a plurality of carrier injection lines in the array that are coupled to each other.

Abstract: An integrated circuit 2 includes a transistor 26 Which has a normal switching speed arising during normal operations of that transistor that apply electrical signals within normal ranges. If it is desired to change the speed of operation of the transistor, then speed tuning circuitry 12 applies a tuning electrical signal with a tuning characteristic outside of the normal range of characteristics to the transistor concerned. The tuning electrical signal induces a change in at least one of the physical properties of that transistor such that when it resumes its modified normal operations the switching speed of that transistor will have changed. The tuning electrical signal may be a voltage (or current) outside of the normal range of voltages applied to the gate of a transistor so as to induce a permanent increase in the threshold of that transistor and so slow its speed of switching. Temperature of a transistor may also be controlled to induce a permanent change in performance/speed.

Abstract: An integrated circuit 2 includes a transistor 26 which has a normal switching speed arising during normal operations of that transistor that apply electrical signals within normal ranges. If it is desired to change the speed of operation of the transistor, then speed tuning circuitry 12 applies a tuning electrical signal with a tuning characteristic outside of the normal range of characteristics to the transistor concerned. The tuning electrical signal induces a change in at least one of the physical properties of that transistor such that when it resumes its modified normal operations the switching speed of that transistor will have changed. The tuning electrical signal may be a voltage (or current) outside of the normal range of voltages applied to the gate of a transistor so as to induce a permanent increase in the threshold of that transistor and so slow its speed of switching. Temperature of a transistor may also be controlled to induce a permanent change in performance/speed.

Abstract: A semiconductor memory storage device for storing data including: a plurality of storage cells, each storage cell including an access control device configured to provide the storage cell with access to or isolation from a data access port in response to an access control signal. Access control circuitry includes: access switching circuitry configured to connect a selected access control line to a voltage source; and feedback circuitry configured to feedback a change in voltage on the access control line to the access switching circuitry. The access control circuitry is configured to respond to a data access request signal to access a selected storage cell connected to a corresponding selected access control line in response to the feedback circuitry providing a feedback signal indicating that the access control line voltage has attained a predetermined value.

Abstract: A memory includes an array of memory cells with each memory cell coupled to an associated pair of bit lines. Read control circuitry is configured to activate a number of addressed memory cells in order to couple each addressed memory cell to its associated pair of bit lines. Sense amplifier circuitry is then coupled to the bit lines to determine the data value stored in each addressed memory. In a speculative read mode of operation, the sense amplifier circuitry evaluates the differential signals. Error detection circuitry is then used to capture the differential signals on the associated pair of bit lines for each addressed memory cell, and to apply an error detection operation to determine if the differential signals as evaluated by the sense amplifier circuitry had not developed to the necessary degree and, in that event, an error signal is asserted.

Abstract: A performance characteristic monitoring circuitry includes a first delay circuitry providing a first delay path, where transmission of a data value over that first delay path incurs a first delay that varies in dependence on the performance characteristic. Reference delay circuitry is also included to provide a reference delay path, where transmission of the data value over the reference delay path incurs a reference delay. The reference delay circuitry includes components configured to provide a capacitive loading on the reference delay path in order to produce a self-compensating effect on the reference delay that causes the reference delay to be less sensitive than the first delay to variation in the performance characteristic. Comparison circuitry is then used to generate the output signal of the monitoring circuitry in dependence on a comparison of the first delay and the reference delay.

Abstract: A memory includes an array of memory cells with each memory cell coupled to an associated pair of bit lines. Read control circuitry is configured to activate a number of addressed memory cells in order to couple each addressed memory cell to its associated pair of bit lines. Sense amplifier circuitry is then coupled to the bit lines to determine the data value stored in each addressed memory. In a speculative read mode of operation, the sense amplifier circuitry evaluates the differential signals. Error detection circuitry is then used to capture the differential signals on the associated pair of bit lines for each addressed memory cell, and to apply an error detection operation to determine if the differential signals as evaluated by the sense amplifier circuitry had not developed to the necessary degree and, in that event, an error signal is asserted.

Abstract: A memory device includes an array of memory cells arranged into a plurality of rows and columns and having a plurality of word lines and a plurality of bit lines passing through the array. The memory cells in each row are activated via a word line signal on the corresponding word line, and the memory cells in each column are coupled to an associated bit line pair via which data is written into an activated memory cell of the column during a write operation and data is read from the activated memory cell of the column during a read operation. A dummy column of dummy memory cells is provided and includes a plurality of loading dummy memory cells for providing a load to the at least one dummy bit line, and at least one write timing dummy memory cell coupled to a dummy word line.

Abstract: An integrated circuit precharges a node 6 to a precharge voltage using precharging circuitry 4. During a discharge phase discharging circuitry 8 selectively discharges that node 6 is to represent a data/signal value. Sensing circuitry 10 detects a discharge characteristic to identify the data/signal value being represented. During the subsequent precharging operation of the node 6 back to the precharge voltage, validating circuitry 12 detects a precharge characteristic, such as the precharge current, the charge transferred, changes in the node voltage or a like, and compares this to the detected discharge characteristic corresponding to the data/signal value sensed by the sensing circuitry. If there is a mismatch, then an operation error signal is generated. The operation error signal may be used to adjust operation parameter, such as the operating voltage/frequency, the timing of the operation of a portion of the integrated circuit or another parameter.

Abstract: A memory includes an array of memory cells with each memory cell coupled to an associated pair of bit lines. Read control circuitry is configured to activate a number of addressed memory cells in order to couple each addressed memory cell to its associated pair of bit lines. Sense amplifier circuitry is then coupled to the bit lines to determine the data value stored in each addressed memory. In a speculative read mode of operation, the sense amplifier circuitry evaluates the differential signals. Error detection circuitry is then used to capture the differential signals on the associated pair of bit lines for each addressed memory cell, and to apply an error detection operation to determine if the differential signals as evaluated by the sense amplifier circuitry had not developed to the necessary degree and, in that event, an error signal is asserted.

Abstract: A memory device includes an array of memory cells arranged in rows and columns, each memory cell being configured to connect to separate write and read paths. The memory cells within each column form a plurality of memory cell groups and are coupled to the read data output circuitry by an associated read path. For each column, the associated read path comprises both a local path portion provided for each memory cell group and a global path portion shared by all memory cells within the column. The global path portion is then connected to the read data output circuitry. Each local path portion is coupled to an associated global path control circuit which is configured during the read operation to control a signal level of the associated global path portion in dependence on a signal level present on the associated local path portion.

Abstract: Techniques for reading from and/or writing to a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first memory cell array having a first plurality of memory cells arranged in a matrix of rows and columns and a second memory cell array having a second plurality of memory cells arranged in a matrix of row and columns. The apparatus may also include a data sense amplifier latch circuitry having a first input node and a second input node. The apparatus may further include a first bit line input circuitry configured to couple the first memory cell array to the first input node of the data sense amplifier latch circuitry and a second bit line input circuitry configured to couple the second memory cell array to the second input node of the data sense amplifier latch circuitry.

Abstract: Techniques for providing a source line plane are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for providing a source line plane. The apparatus may comprise a source line plane coupled to at least one constant voltage source. The apparatus may also comprise a plurality of memory cells arranged in an array of rows and columns, each memory cell including one or more memory transistors. Each of the one or more memory transistors may comprise a first region coupled to the source line plane, a second region coupled to a bit line, a body region disposed between the first region and the second region, wherein the body region may be electrically floating, and a gate coupled to a word line and spaced apart from, and capacitively coupled to, the body region.