Abstract: An array substrate for a liquid crystal display device includes: a substrate; a gate electrode and a gate line on the substrate; a gate insulating layer on the gate electrode and the gate line; an active layer on the gate insulating layer; an ohmic contact layer on the active layer; source and drain electrodes and a data line on the ohmic contact layer, the source and drain electrodes and the data line having a multiple metal layer; a passivation layer on the source and drain electrodes and the data line; and a pixel electrode on the passivation layer.

Abstract: An array substrate for a liquid crystal display device includes: a substrate; a gate electrode and a gate line on the substrate; a gate insulating layer on the gate electrode and the gate line; an active layer on the gate insulating layer; an ohmic contact layer on the active layer; source and drain electrodes and a data line on the ohmic contact layer, the source and drain electrodes and the data line having a multiple metal layer; a passivation layer on the source and drain electrodes and the data line; and a pixel electrode on the passivation layer.

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer, a first copper layer, and a first out-diffusion film that covers and surrounds the first copper layer. In the liquid crystal display device, the pixel electrode, gate pad terminal and data pad terminal are formed of a transparent conductive material on a passivation layer.

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer, a first copper layer, and a first out-diffusion film that covers and surrounds the first copper layer. In the liquid crystal display device, the pixel electrode, gate pad terminal and data pad terminal are formed of a transparent conductive material on a passivation layer.

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer, a first copper layer, and a first out-diffusion film that covers and surrounds the first copper layer. In the liquid crystal display device, the pixel electrode, gate pad terminal and data pad terminal are formed of a transparent conductive material on a passivation layer.

Abstract: A semiconductor device includes a substrate having source and drain regions, a gate insulating layer on the substrate, a gate electrode on the gate insulating layer, an interlayer on the gate electrode, a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein at least one of the gate electrode, the source electrode and the drain electrode includes a first metal layer of molybdenum (Mo)-titanium (Ti) alloy, a second metal layer of one of metallic metals including copper (Cu), aluminum (Al), silver (Ag) and gold (Au) on the first metal layer.

Abstract: An array substrate for a liquid crystal display device includes: a substrate; a gate electrode and a gate line on the substrate; a gate insulating layer on the gate electrode and the gate line; an active layer on the gate insulating layer; an ohmic contact layer on the active layer; source and drain electrodes and a data line on the ohmic contact layer, the source and drain electrodes and the data line having a multiple metal layer; a passivation layer on the source and drain electrodes and the data line; and a pixel electrode on the passivation layer.

Abstract: An array substrate for a liquid crystal display device includes a gate electrode, a gate line and a gate pad electrode disposed on a substrate, each of the gate electrode, the gate line and the gate pad electrode having a first metal barrier layer, a first copper alloy layer, and a first out-diffusion film, and the first out-diffusion film completely covering, surrounding and contacting entire surfaces of the first copper alloy layer. The array substrate includes a gate insulation layer disposed on the substrate and covering the gate electrode, the gate line and the gate pad electrode. An active layer and an ohmic contact layer are sequentially formed on the gate insulation layer and over the gate electrode. A data line is formed on the gate insulation layer and perpendicularly crosses the gate line. A source electrode and a drain electrode contact the ohmic contact layer.

Abstract: A method for forming a line of an LCD device includes sequentially depositing first and second metal layers on a glass substrate, forming a mask pattern on the second metal layer, performing a first wet-etch process using a mixed acid solution as an etchant on the first and second metal layers with the mask pattern, and performing a second wet-etch process using the mask pattern.

Abstract: A semiconductor device includes a substrate having source and drain regions, a gate insulating layer on the substrate, a gate electrode on the gate insulating layer, an interlayer on the gate electrode, a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein at least one of the gate electrode, the source electrode and the drain electrode includes a first metal layer of molybdenum (Mo)-titanium (Ti) alloy, a second metal layer of one of metallic metals including copper (Cu), aluminum (Al), silver (Ag) and gold (Au) on the first metal layer.

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer, a first copper layer, and a first out-diffusion film that covers and surrounds the first copper layer. In the liquid crystal display device, the pixel electrode, gate pad terminal and data pad terminal are formed of a transparent conductive material on a passivation layer.

Abstract: An etchant for forming double-layered signal lines and electrodes of a liquid crystal display device includes hydrogen peroxide (H2O2), a phosphate, F-ions, an organic acid having a carboxyl group (—COOH), a copper (Cu) inhibitor, and a hydrogen peroxide (H2O2) stabilizer, wherein each of the double-layered signal lines and electrodes of the liquid crystal display device includes a first layer of one of aluminum (Al), aluminum alloy (Al-alloy), titanium (Ti), titanium alloy (Ti-alloy), tantalum (Ta), and a tantalum alloy (Ta-alloy) and a second layer of copper (Cu).

Abstract: An array substrate for a liquid crystal display device includes a gate electrode, a gate line and a gate pad electrode disposed on a substrate, each of the gate electrode, the gate line and the gate pad electrode having a first metal barrier layer, a first copper alloy layer, and a first out-diffusion film, and the first out-diffusion film completely covering, surrounding and contacting entire surfaces of the first copper alloy layer. The array substrate includes a gate insulation layer disposed on the substrate and covering the gate electrode, the gate line and the gate pad electrode. An active layer and an ohmic contact layer are sequentially formed on the gate insulation layer and over the gate electrode. A data line is formed on the gate insulation layer and perpendicularly crosses the gate line. A source electrode and a drain electrode contact the ohmic contact layer.

Abstract: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer

Abstract: A method for forming a line of an LCD device includes sequentially depositing first and second metal layers on a glass substrate, forming a mask pattern on the second metal layer, performing a first wet-etch process using a mixed acid solution as an etchant on the first and second metal layers with the mask pattern, and performing a second wet-etch process using the mask pattern.

Abstract: An array substrate for a liquid crystal display device includes: a substrate; a gate electrode and a gate line on the substrate; a gate insulating layer on the gate electrode and the gate line; an active layer on the gate insulating layer; an ohmic contact layer on the active layer; source and drain electrodes and a data line on the ohmic contact layer, the source and drain electrodes and the data line having a multiple metal layer; a passivation layer on the source and drain electrodes and the data line; and a pixel electrode on the passivation layer.

Abstract: A method for fabricating an LCD device provided with an active region where a plurality of gate lines are arranged to cross a plurality of data lines so as to define a pixel region, and a cutting region between a pad part of the gate line and a shorting bar, the method includes the steps of forming a gate line including a gate electrode in the active region on a substrate and forming a gate metal pattern for connecting the gate line and the shorting bar in the cutting region, forming an insulating film on an entire surface of the active and cutting regions, forming a TFT provided with source and drain electrodes in the active region, depositing a passivation film on an entire surface of the active region and forming a contact hole at a drain electrode of the TFT and the gate metal pattern, forming a transparent electrode for electrically connecting to the drain electrode through contact hole, selectively etching the transparent electrode so that only a pixel electrode remains in the active region and the gate

Abstract: A method for fabricating thin film transistor-LCD is disclosed, wherein a pixel electrode and a gate metal in a cutting region of a pad part can be eliminated through two steps of etching in the same process.