Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

Abstract: Exemplary methods of manufacturing a semiconductor cover wafer may include sintering aluminum nitride particles into a substrate characterized by a thickness and characterized by a disc shape. The methods may include grinding a surface of the substrate to reduce the thickness to less than or about 2 mm. The methods may include polishing the surface of the substrate to reduce a roughness. The methods may include annealing the substrate at a temperature of greater than or about 800° C. for a time period of greater than or about 60 minutes.

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

Abstract: Disclosed is a method for identifying multi-level hierarchical relationships between data elements of a document, the method comprising receiving a plurality of sample documents each having a plurality of data elements arranged in a multi-level hierarchical data structure; classifying each of the plurality of data elements into a key entity field or a key field value based on a hierarchical relationship therebetween; identifying key entity fields, from among the classified key entity field of the plurality of data elements, having the hierarchical relationship therebetween; pairing the key entity field, with a corresponding key field value or an identified key entity field, to form a training dataset; and employing the training dataset on a neural network framework, having at least one of a textual modality or a visual modality, to identify the multi-level hierarchical relationships between the data elements of the document.

Abstract: Systems and methods include intercepting traffic at a mobile device via a connector application executing on the mobile device, the traffic originating from one or more applications on the mobile device and destined for one or more resources located in one of a public cloud, a private cloud, and an enterprise network; detecting one or more Virtual Private Network (VPN) profiles associated with the traffic, wherein the one or more VPN profiles are assigned to the traffic by the operating system of the mobile device; and forwarding the traffic to a cloud-based system via one or more tunnels based on the one or more VPN profiles detected in the traffic.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Abstract: The innovation discloses systems, methods and computer program products that reduce complexity and associated measures that are taken to ensure trust in secured transactions as necessitated by requirements present only in an ecommerce environment that do not have a parallel with traditional bricks and mortar commercial transactions. The innovation enables a multitude of mobile wallet applications to engage and obtain services from ecommerce applications wherein backend processing by a mobile wallet server obtains and delivers funds to ecommerce applications without sharing a subset of sensitive data, associated with a mobile wallet application user for the secured transactions. The innovation further provides for a wallet network to be initiated and engaged in which the secured transactions can take place, adopting and adapting social network application connectivity.

Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

Abstract: Embodiments of the present disclosure relate to semiconductor processing. More specifically, embodiments of the present disclosure relate to methods for seasoning one or more components of a process chamber. In at least one embodiment, a method for seasoning a process chamber includes depositing a seasoning film onto a component of the process chamber at a chamber pressure of about 4 mTorr to about 20 mTorr and a temperature below about 200° C. or about 200° C. to about 400° C. The method includes depositing a deposition film onto the seasoning film. In at least one embodiment, a method includes introducing a nitrogen-containing gas to the seasoning film to form a nitrogen-treated seasoning film. Introducing the nitrogen-containing gas to the seasoning film is performed before depositing the deposition film onto the seasoning film.

Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

Abstract: Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 ? in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

Abstract: Embodiments of the present disclosure generally relate to methods of forming hardmasks. Embodiments described herein enable, e.g., formation of carbon-containing hardmasks having reduced film stress. In an embodiment, a method of processing a substrate is provided. The method includes positioning a substrate in a processing volume of a processing chamber and depositing a diamond-like carbon (DLC) layer on the substrate. After depositing the DLC layer, the film stress is reduced by performing a plasma treatment, wherein the plasma treatment comprises applying a radio frequency (RF) bias power of about 100 W to about 10,000 W.

Abstract: Exemplary methods of manufacturing a semiconductor cover wafer may include sintering aluminum nitride particles into a substrate characterized by a thickness and characterized by a disc shape. The methods may include grinding a surface of the substrate to reduce the thickness to less than or about 2 mm. The methods may include polishing the surface of the substrate to reduce a roughness. The methods may include annealing the substrate at a temperature of greater than or about 800° C. for a time period of greater than or about 60 minutes.

Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

Abstract: Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

Abstract: Embodiments disclosed herein may include a heater pedestal. In an embodiment, the heater pedestal may comprise a heater pedestal body and a conductive mesh embedded in the heater pedestal. In an embodiment, the conductive mesh is electrically coupled to a voltage source In an embodiment, the heater pedestal may further comprise a support surface on the heater pedestal body. In an embodiment, the support surface comprises a plurality of pillars extending out from the heater pedestal body and arranged in concentric rings. In an embodiment pillars in an outermost concentric ring have a height that is greater than a height of pillars in an innermost concentric ring.

Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.

Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.