Abstract: After identifying characters are written on the wafer surface 16 as a pattern of small holes 19 formed with a laser in the wafer I.D. stage of a semiconductor manufacturing process, the wafer surface in the region of the I.D. is polished to break loose deposits of silicon 20 that are left on the wafer surface and the region is then washed. The process prevents semiconductor material deposited on the wafer surface during the laser operation from later breaking off as hard particles that can scratch the surface of the wafer.

Abstract: An apparatus for polishing and cleaning a semiconductor wafer (3028) is disclosed to substantially improve the efficiency of chemical-mechanical polishing. The apparatus reduces contamination to a clean room during fabrication of VLSI circuits. The apparatus includes a table (3026) supporting the wafer, and a polishing pad (3024) disposed on a surface of the wafer. The polishing pad performs chemical-mechanical polishing on the surface of the wafer. Further, at least one cleaning head (3042, 3044, 3046) is provided for cleaning the surface of the wafer. The wafer and the cleaning head are housed in a chamber (30). A guiding means (32) is used for guiding the cleaning head over the wafer to clean the surface of the wafer.