Abstract: A light-emitting device includes a heat-dissipating structure having a first part and a second part separated from the first part; a light-emitting unit including a light-emitting element with a first pad formed on the first part; and a first transparent enclosing the light-emitting element and having a sidewall; and an adhesive material covering a portion of the sidewall.

Abstract: A light-emitting device includes a heat-dissipating structure having a first part and a second part separated from the first part; a light-emitting unit including a light-emitting element with a first pad formed on the first part; and a first transparent enclosing the light-emitting element and having a sidewall; and an adhesive material covering a portion of the sidewall.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes: a heat-dissipating structure having a first part and a second part separated from the first part; a light-emitting unit including a light-emitting element with a first pad formed on the first part; and a first transparent enclosing the light-emitting element and having a sidewall; and an adhesive material covering a portion of the sidewall.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes: a heat-dissipating structure having a first part and a second part separated from the first part; a light-emitting unit including a light-emitting element with a first pad formed on the first part; and a first transparent enclosing the light-emitting element and having a sidewall; and an adhesive material covering a portion of the sidewall.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes: a heat-dissipating structure having a first part and a second part separated from the first part; a light-emitting unit including a light-emitting element with a first pad formed on the first part; and a first transparent enclosing the light-emitting element and having a sidewall; and an adhesive material covering a portion of the sidewall.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes: a heat-dissipating structure having a first part and a second part separated from the first part; a light-emitting unit including a light-emitting element with a first pad formed on the first part; and a first transparent enclosing the light-emitting element and having a sidewall; and an adhesive material covering a portion of the sidewall.

Abstract: A light emitting device having a high resistivity cushion layer, comprising a substrate; a first cladding layer formed on the substrate; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer; a high resistivity cushion layer formed on the second cladding layer and having a resistivity higher than that of the second cladding layer; a contact layer formed on the high resistivity cushion layer; and a transparent conductive layer formed on the contact layer.

Abstract: A high brightness light emitting diode having a distributed contact area comprising a first electrode; a semiconductor substrate formed on the first electrode; a first cladding layer of a first conductivity type formed on the semiconductor substrate; an active layer formed on the first cladding layer; a second cladding layer of a second conductivity type formed on the active layer; a window layer of a second conductivity type formed on the second cladding layer; a distributed contact area in a predetermined pattern formed on the window layer; a transparent conductive layer formed over the distributed contact area and the window layer, the transparent conductive layer being in ohmic contact with the distributed contact area and a Shottky barrier being formed between the transparent conductive layer and the window layer; and a second electrode formed on the transparent conductive layer.

Abstract: A high-brightness light emitting diode is provided.

Abstract: A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate on a first electrode, a first cladding layer of a first conductivity type on the substrate, an active layer on the first cladding layer, a second cladding layer of a second conductivity type on the active layer, a window layer of the second conductivity type on the second cladding layer, wherein the electrical resistivity of the window layer is less than that of the second cladding layer, a contact layer of the second conductivity type on the window layer for providing ohmic contact, and a conductive transparent oxide layer on the contact layer, wherein the electrical resistivity of the conductive transparent oxide layer is less than that of the window layer and the contact layer.

Abstract: A method for forming P-type gallium nitride is disclosed in the invention. In this method, Mg--H can be completly discomposed by use of an annealing process, thereby entirely dissociating the hydrogen atoms from the gallium nitride, while the nitrogen atoms are not dissociated from the gallium nitride. Therefore, the P-type gallium nitride having high conductivity is obtained and V.sub.N gap defects created in the gallium nitride do not occur. During the annealing process, nitrogen flux is added around the gallium nitride to prevent decomposition of the gallium nitride. The above-mentioned nitrogen flux can be generated by use of RF plasma, electron cyclotron resonance (ECR) or ion beam. Furthermore, since a forward current is provided across the P--N junction of the gallium nitride, the Mg--H inside the magnesium-doped gallium nitride can be decomposed by just increasing the temperature to 175.degree. C.

Abstract: A surface-emitting AlGaInP LED is disclosed. The LED uses a GaP layer as a window layer to eliminate the current crowding effect, or may has an ITO window layer and use GaP, instead of GaAs, as the substrate to eliminate the current-crowding effect and avoid the emitted light being absorbed by the substrate. The GaP layer is bonded to the double hetero-structure epitaxy layer by a wafer bonding technique. The present invention, however, provides a manufacturing procedure which is easier and more reliable to handle than prior arts.

Abstract: A plastic-molded apparatus for a semiconductor laser is disclosed, which comprise: a first lead having a broad end thereof serving as a mounting plate; a second lead located at one side of the first lead; a third lead located at other side of the first lead; a submount, disposed on a front end of the mounting plate, having a semiconductor laser chip disposed thereon, electrically connected to the second lead, and a monitor detector disposed on the mounting plate closely adjacent to the submount, electrically connected to the third lead, for receiving backward light from the semiconductor laser chip; a plastic-molded header to fix the first lead, the second lead and the third lead; and a transparent cap, adapted to the plastic-molded header, for sealing all components including the laser chip, the monitor detector and peripheral parts on the plastic-molded header.

Abstract: A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate formed on a first electrode, a first cladding layer of a first conductivity type formed on the substrate, an active layer formed on the first cladding layer, a second cladding layer of a second conductivity type formed on the active layer, a window layer of the second conductivity type formed on the second cladding layer, wherein the electrical resistivity of the window layer is less than the electrical resistivity of the second cladding layer, a contact layer of the second conductivity type formed on the window layer for providing ohmic contact, a conductive transparent oxide layer formed on the contact layer, and a current blocking region formed in the LED.

Abstract: A surface-emitting AlGaInP LED is disclosed.

Abstract: A surface emitting AlGaInP LED having an ITO layer as a window layer to eliminate the current crowding effect, and an ohmic contact layer between its double hetero-structure of AlGaInP and the ITO layer, so that ITO can be utilized with the double hetero-structure of AlGaInP.

Abstract: A light emitting diode is provided with a window layer of ZnSSe semiconductor material having a second conductivity type. The second conductivity type ZnSSe window layer has a low electrical resistivity so that it can be used as a current spreading layer, and a bandgap higher than that of the active layer so that it is transparent to light emitted from the active layers. The second conductivity type ZnSSe window layer can be doped with a donor concentration of more than 10.sup.18 cm.sup.-3. Furthermore, its lattice constant is close to that of the active layers and confining layers so that deterioration in optical characteristic due to lattice mismatch is minimized.

Abstract: This invention relates to the preparation of a novel Si/HZSM-5 catalyst through vapor phase deposition of Si on the surface of HZSM-5 catalyst which is obtained by ion exchanging ZSM-5 catalyst. The source of deposition Si comes from tetraalkyl ortho-silicate (or tetra-alkoxy silane), Si(OR)4, wherein R represents the alkyl group that contains 1-4 carbon atoms. The silicon deposit will substantially not clog the pores of the catalyst.The present invention is to make use of the modified catalyst in the alkylation or disproportionation reactions in order to enhance the yield of p-dialkylbenzene as an ingredient in the final product of aryl compounds such as toluene or ethylbenzene.

Abstract: This invention relates to the preparation of a novel Si/HZSM-5 catalyst through vapor phase deposition of Si on the surface of HZSM-5 catalyst which is obtained by ion exchanging ZSM-5 catalyst. The source of depositing Si comes from tetraalkyl ortho-silicate (or tetra-alkoxy silane), Si(OR)4, wherein R represents the alkyl group that contains 1-4 carbon atoms. The silicon deposit will substantially not clog the pores of the catalyst.The present invention is to make use of the modified catalyst in the alkylation or disproportionation reactions in order to enhance the yield of p-dialkylbenzene as an ingredient in the final product of aryl compounds such as toluene or ethylbenzene.

Abstract: A surface emitting AlGaInP LED having an ITO layer as a window layer to eliminate the current crowding effect, and an ohmic contact layer between its double hereto-structure of AlGaInP and the ITO layer, so that ITO can be utilized with the double hereto-structure of AlGaInP.