Surface light emitting diode with electrically conductive window layer
A surface emitting AlGaInP LED having an ITO layer as a window layer to eliminate the current crowding effect, and an ohmic contact layer between its double hereto-structure of AlGaInP and the ITO layer, so that ITO can be utilized with the double hereto-structure of AlGaInP.
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Claims
2. The light emitting diode as claimed in claim 1, wherein the window layer comprises tin oxide.
3. The light emitting diode as claimed in claim 1, wherein the window layer comprises indium oxide.
5. The light emitting diode as claimed in claim 1, wherein the ohmic contact layer comprises GaAsP.
7. The light emitting diode as claimed in claim 1, wherein the ohmic contact layer comprises GaAs.
8. The light emitting diode as claimed in claim 1, wherein the first conductivity type is n-type.
9. The light emitting diode as claimed in claim 1, wherein the first conductivity type is p-type.
10. The light emitting diode as claimed in claim 1, wherein the double hetero-structure comprises an AlGaInP layer of the first conductivity type, an undoped AlGaInP layer, and an AlGaInP layer of a second conductivity type.
11. The light emitting diode as claimed in claim 10, wherein the window layer comprises tin oxide.
12. The light emitting diode as claimed in claim 10, wherein the window layer comprises indium oxide.
13. The light emitting diode as claimed in claim 10, wherein the window layer comprises indium tin oxide.
14. The light emitting diode as claimed in claim 10, wherein the ohmic contact layer comprises GaAsP.
16. The light emitting diode as claimed in claim 10, wherein the ohmic contact layer comprises GaAs.
17. The light emitting diode as claimed in claim 10, wherein the first conductivity type is n-type and the second conductivity type is p-type.
18. The light emitting diode as claimed in claim 10, wherein the first conductivity type is p-type and the second conductivity type is n-type.
| 4570172 | February 11, 1986 | Henry et al. |
| 5233204 | August 3, 1993 | Fletcher et al. |
| 5300791 | April 5, 1994 | Chen et al. |
| 5568499 | October 22, 1996 | Lear |
- Andre et al., "III-V Alloys and Their Potential for Visible Emitter Applications", Prog. Crystal Growth and Charact., vol. 19, 1989, Pergamon Press, Great Britain, pp. 97-105.
Type: Grant
Filed: Jun 25, 1996
Date of Patent: Nov 18, 1997
Assignee: Industrial Technology Research Institute
Inventors: Jyh-Feng Lin (Hua-Lien), Chuan-Ming Chang (Hsinchu), Biing-Jye Lee (Hsinchu), Ming-Jiunn Jou (Hsinchu)
Primary Examiner: William Mintel
Attorney: Michael D. Kilpatrick Stockton LLP Bednarek
Application Number: 8/668,601
International Classification: H01L 3300;
