Abstract: The present invention provides a miniature light sensing assembly comprising a light sensing device, a computing device and a connecting member. The light sensing device comprises a main body having an entrance, a light detecting unit disposed in the main body and receiving light travelling through the entrance, a processing module disposed in the main body and converting the light into a photoelectric signal, a connecting unit disposed on the main body, and a signal transmitting module transmitting the photoelectric signal wirelessly. The connecting member is adapted to couple with the light sensing device through the connecting unit. The photoelectric signal is transmitted from the signal transmitting module to the computing device wirelessly and converted into information required by a user by the computing device.

Abstract: The present invention provides a miniature light sensing assembly comprising a light sensing device, a computing device and a connecting member. The light sensing device comprises a main body having an entrance, a light detecting unit disposed in the main body and receiving light travelling through the entrance, a processing module disposed in the main body and converting the light into a photoelectric signal, a connecting unit disposed on the main body, and a signal transmitting module transmitting the photoelectric signal wirelessly. The connecting member is adapted to couple with the light sensing device through the connecting unit. The photoelectric signal is transmitted from the signal transmitting module to the computing device wirelessly and converted into information required by a user by the computing device.

Abstract: A steam cleaner includes a water pump to supply water from a water tank to a heater, and the heater heats it up to become steam to be shot out of a base so as to be used for washing a floor. The steam cleaner also has a water volume button for controlling operating frequency of the water pump to change steam volume to be shot out, by handling of a switch button fixed on a handle to control start and close of washing and operating condition. The grip of the handle is pivotally connected to the base with no limited stages so that the handle can be inclined to one of numerous angles to suit to the height of a user for conveniently using the steam cleaner. And a support base is provided for the steam cleaner to rest thereon for storing away when not used.

Abstract: An ice and snow remover includes a covering part, an electric heat generating part disposed in the covering part for melting ice and snow, two temperature sensors, and a display fitted to the covering part. The temperature sensors are connected to the heat generating part, and disposed in the covering part respectively, and are electrically connected to the display so that temperature of the heat generating part and temperature inside the covering part can be sensed and displayed, helping a user use the ice and snow remover and preventing the user from getting burnt due to touching the remover to try to find out the temperature of the remover when the remover is very hot.

Abstract: A method of fabricating a metal plug comprises steps of providing a substrate and forming a dielectric layer on the substrate with an opening to expose part of the substrate. The method further comprises steps of forming a metal layer on the dielectric layer, forming a first barrier layer by chemical vapor deposition (CVD) to provide a better step coverage, and forming a second barrier layer by physical vapor deposition (PVD) to make the barrier layer harder and less water absorptive. A metal layer is then formed on the second barrier layer and is removed by etching back to form the metal plug.

Abstract: A method of manufacturing an interconnect. A wafer having an edge region and an interior region is provided. An insulating layer is formed on the wafer. An opening penetrating through the insulating layer in the interior region is formed and a portion of the insulating layer is removed to expose the surface of the wafer in the edge region, simultaneously. A conductive layer is formed on the insulating layer and the wafer exposed by the insulating layer and fills the opening. The conductive layer is patterned to form a wire in the opening.

Abstract: A method of manufacturing an interconnect on a wafer having an edge region and an interior region comprises the steps of: forming an insulating layer on the wafer having an interior region and an edge region; forming an opening penetrating through the insulating layer in the interior region and removing a portion of the insulating layer to expose a surface of the wafer in the edge region, simultaneously; forming a conductive layer over the insulating layer and the exposed surface of the wafer and filling the opening; and patterning the conductive layer to form a wire in the opening.

Abstract: A method for etching metal which can increase the metal-to-photoresist etching selectivity of a metal layer aimed to be etched with respect to a photoresist layer overlaying the metal layer. The method includes a first step of forming a cap oxide layer over the metal layer; a second step of forming a photoresist layer with a desired pattern over the cap oxide layer; a third step of conducting an ion implantation process on the photoresist layer; and a final step of conducting an etching process on the semiconductor wafer by using the photoresist layer as a mask so as to etch away exposed portions of the metal layer that are uncovered by the photoresist layer. Through experiments, it is found that the invention provides a significantly improved etching selectivity over the prior art.

Abstract: A multi-level conductive interconnection for an integrated circuit is formed in a silicon substrate, wherein there are large contact pad areas at the periphery of the interconnection. A patterned layer of a polysilicon layer is formed on the substrate to act as a first contact to the integrated circuit. An insulating layer is formed over the polysilicon layer, and openings to the polysilicon layer are formed through the insulating layer. A first layer of metal is formed on the insulator such that the metal electrically connects to the polysilicon through the openings, and also forms large contact pad areas. The first metal is patterned to form an electrical break between the large contact pad areas and the integrated circuit. This break prevents electrical damage to the integrated circuit due to charge build-up during subsequent processing in a plasma environment. A second insulating layer is formed and patterned to provide openings for vias to the first metal layer.

Abstract: A multi-level conductive interconnection for an integrated circuit is formed in a silicon substrate, wherein there are large contact pad areas at the periphery of the interconnection. A patterned layer of a conductive polysilicon is formed on the substrate to act as a first conductive contact to the integrated circuit. An insulating layer is formed over the polysilicon layer, and openings to the polysilicon layer are formed through the insulating layer. A first layer of metal is formed on the insulator such that the metal electrically connects to the polysilicon through the openings, and also forming large contact pad areas. The first metal is patterned to form an electrical break between the large contact pad areas and the integrated circuit. This break prevents electrical damage to the integrated circuit due to charge build-up during subsequent processing in a plasma environment. A second insulating layer is formed and patterned to provide openings for vias to the first metal layer.