Abstract: The present disclosure relates to an apparatus for training one or more signal timing relations of a control interface between a registering clock driver and one or more data buffers of a memory module comprising a plurality of memory chips, the control interface comprising a clock signal and at least one control signal.

Abstract: Provided is a device for use in a memory module coupled to a host memory controller over a bus, comprising memory module control logic to generate a request signal to a host memory controller having a pulse width greater than or equal to a minimum pulse width, wherein the minimum pulse width comprises a number of clock cycles needed to guarantee that the host memory controller detects the request signal, and wherein the pulse width of the request signal indicates at least one function in addition to the request signal to the host memory controller.

Abstract: A sequence of read returns are to be sent to a host device over a transactional buffered memory interface, where the sequence includes at least a first read return to a first read request and a second read return to a second read request. A tracker identifier of the second read return is encoded in the first read return and the first read return is sent with the tracker identifier of the second read return to the host device. The second read return is sent to the host device after the first read return is sent.

Abstract: Techniques and mechanisms to provide selective access to data error information by a memory controller. In an embodiment, a memory device stores a first value representing a baseline number of data errors determined prior to operation of the memory device with the memory controller. Error detection logic of the memory device determines a current count of data errors, and calculates a second value representing a difference between the count of data errors and the baseline number of data errors. The memory device provides the second value to the memory controller, which is unable to identify that the second value is a relative error count. In another embodiment, the memory controller is restricted from retrieving the baseline number of data errors.

Abstract: Error correction in a memory subsystem includes a memory device generating internal check bits after performing internal error detection and correction, and providing the internal check bits to the memory controller. The memory device performs internal error detection to detect errors in read data in response to a read request from the memory controller. The memory device selectively performs internal error correction if an error is detected in the read data. The memory device generates check bits indicating an error vector for the read data after performing internal error detection and correction, and provides the check bits with the read data to the memory controller in response to the read request. The memory controller can apply the check bits for error correction external to the memory device.

Abstract: A speculative read request is received from a host device over a buffered memory access link for data associated with a particular address. A read request is sent for the data to a memory device. The data is received from the memory device in response to the read request and the received data is sent to the host device as a response to a demand read request received subsequent to the speculative read request.

Abstract: Provided are a method and apparatus for method and apparatus for encoding registers in a memory module. A mode register command is sent to the memory module over a bus, initialization of the memory module before the bus to the memory module is trained for bus operations, to program one of a plurality of mode registers in the memory module, wherein the mode register command indicates one of the mode registers and includes data for the indicated mode register.

Abstract: Data is sent from a memory buffer device to a host device over a link. An error in the data is determined. A read response cancellation signal is sent to the host device to indicate the error to the host device, where the read response cancellation signal is to be sent subsequent to the data being sent from the memory buffer device to the host device.

Abstract: Error correction in a memory subsystem includes a memory device generating internal check bits after performing internal error detection and correction, and providing the internal check bits to the memory controller. The memory device performs internal error detection to detect errors in read data in response to a read request from the memory controller. The memory device selectively performs internal error correction if an error is detected in the read data. The memory device generates check bits indicating an error vector for the read data after performing internal error detection and correction, and provides the check bits with the read data to the memory controller in response to the read request. The memory controller can apply the check bits for error correction external to the memory device.

Abstract: A system includes a repeater architecture for reads where memory connects to a host for with one bandwidth, and repeats the channel with a lower bandwidth. A memory circuit includes a first group of read signal lines to couple point-to-point between a first group of memory devices and a host device. The memory circuit includes a second, smaller group of read signal lines to couple point-to-point between the first group of memory devices and a second group of memory devices, to extend the memory channel to the second group of memory devices. The memory circuit includes a repeater to share read bandwidth between the first and second groups of memory devices, with up to a portion of the bandwidth for reads to the second group of memory devices, and at least an amount equal to the bandwidth less the portion for reads to the first group of memory devices.

Abstract: A system includes a repeater architecture for commands where memory connects to a host for with one bandwidth, and repeats the channel with a lower bandwidth. A memory circuit includes a first group of command signal lines to couple point-to-point between a first group of memory devices and a host device. The memory circuit includes a second, smaller group of command signal lines to couple point-to-point between the first group of memory devices and a second group of memory devices, to extend the memory channel to the second group of memory devices. The memory circuit includes a repeater to share the command bandwidth between the first and second groups of memory devices, with up to a portion of the bandwidth for commands to the second group of memory devices, and at least an amount equal to the bandwidth less the portion for commands to the first group of memory devices.

Abstract: Examples may include techniques to use chip select signals for a dual in-line memory module (DIMM). In some examples, the chip select signals are used with either a first encoding scheme for clock enable (CKE) functionality or a second encoding scheme for on-die termination (ODT) functionality to enable memory devices on the DIMM to be accessed or controlled according to commands received with the chip select signals.

Abstract: In some embodiments a controller includes a memory activate pin, one or more combined memory command/address signal pins, and a selection circuit adapted to select in response to the memory activate pin as each of the one or more combined memory command/address signal pins either a memory command signal or a memory address signal. Other embodiments are described and claimed.

Abstract: Examples include techniques to mirror a command/address or interpret command/address logic at a memory device. A memory device located on a dual in-line memory module (DIMM) may include circuitry having logic capable of receiving a command/address signal and mirror a command/address or interpret command/address logic indicated in the command/address signal based on one or more strap pins for the memory device.

Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology.

Abstract: A sequence of read returns are to be sent to a host device over a transactional buffered memory interface, where the sequence includes at least a first read return to a first read request and a second read return to a second read request. A tracker identifier of the second read return is encoded in the first read return and the first read return is sent with the tracker identifier of the second read return to the host device. The second read return is sent to the host device after the first read return is sent.

Abstract: Examples include techniques to access or operate a dual in-line memory module (DIMM) via one or multiple data channels. In some examples, memory devices at or on the DIMM may be accessed via one or more data channels. The one or more data channels arranged such that the DIMM is configured to operate in a dual channel mode that includes two data channels or to operate in a single channel mode that includes a single data channel.

Abstract: A speculative read request is received from a host device over a buffered memory access link for data associated with a particular address. A read request is sent for the data to a memory device. The data is received from the memory device in response to the read request and the received data is sent to the host device as a response to a demand read request received subsequent to the speculative read request.

Abstract: Data is sent from a memory buffer device to a host device over a link. An error in the data is determined. A read response cancellation signal is sent to the host device to indicate the error to the host device, where the read response cancellation signal is to be sent subsequent to the data being sent from the memory buffer device to the host device.

Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.