Patents by Inventor Bill Phan

Bill Phan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220013554
    Abstract: Examples of the disclosed subject matter propose disposing deep trench isolation structure around the perimeter of the pixel transistor region of the pixel cell. In some example embodiments, the deep trench isolation structure extends into the semiconductor substrate from the back side of the semiconductor substrate and abuts against or contacts the bottom of shallow trench isolation structure disposed in the front side of the semiconductor substrate. Together, the trench isolating structure isolates the transistor channel of the pixel transistor region. The formation and arrangement of the trench isolation structure in the pixel transistor region forms a floating doped well region, such as a floating P-doped well region (P-well), containing a floating diffusion (FD) and source/drains (e.g., (N) doped regions) of the pixel transistors. This floating P-well region aims to reduce junction leakage associated with the floating diffusion region of the pixel cell.
    Type: Application
    Filed: July 8, 2020
    Publication date: January 13, 2022
    Inventors: Seong Yeol Mun, Bill Phan
  • Patent number: 11217613
    Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: January 4, 2022
    Assignee: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Bill Phan, Yuanliang Liu, Duli Mao, Seong Yeol Mun, Alireza Bonakdar
  • Publication number: 20210358993
    Abstract: A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 18, 2021
    Inventors: Duli Mao, Bill Phan, Keiji Mabuchi, Seong Yeol Mun, Yuanliang Liu, Vincent Venezia
  • Publication number: 20210305298
    Abstract: Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. At least three substrate trench structures are formed in the semiconductor substrate, defining two nonplanar structures, each having a plurality of sidewall portions. An isolation layer includes at least three isolation layer trench structures, each being disposed in a respective one of the three substrate trench structures. A gate includes three fingers, each being disposed in a respective one of the three isolation layer trench structures. An electron channel of the transistor extends along the plurality of sidewall portions of the two nonplanar structures in a channel width plane.
    Type: Application
    Filed: March 25, 2020
    Publication date: September 30, 2021
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Sing-Chung Hu, Seong Yeol Mun, Bill Phan
  • Publication number: 20210242265
    Abstract: An image sensor with quantum efficiency enhanced by inverted pyramids includes a semiconductor substrate and a plurality of microlenses. The semiconductor substrate includes an array of pixels. Each of the pixels is configured to convert light incident on the pixel to an electrical output signal, the semiconductor substrate having a top surface for receiving the light. The top surface forms a plurality of inverted pyramids in each pixel. The plurality of microlenses are disposed above the top surface and aligned to the plurality of inverted pyramids, respectively.
    Type: Application
    Filed: January 30, 2020
    Publication date: August 5, 2021
    Inventors: Alireza BONAKDAR, Zhiqiang LIN, Bill PHAN, Badrinath PADMANABHAN
  • Publication number: 20210202546
    Abstract: Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein. A plurality of pixel isolators is formed in the substrate material, each pixel isolator being disposed between one of the SPDs and one of the LPDs. A passivation layer is disposed on the substrate material and a buffer layer is disposed on the passivation layer. A plurality of first metal elements is disposed in the buffer layer, each first metal element being disposed over one of the pixel isolators, and a plurality of second metal elements is disposed over the plurality of first metal elements.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 1, 2021
    Inventors: Yuanliang Liu, Bill Phan, Duli Mao, Alireza Bonakdar
  • Publication number: 20210202554
    Abstract: A pixel cell includes a first photodiode, a second photodiode, a first deep trench isolation region, a second deep trench isolation region, a buffer oxide layer, and a light attenuation layer. The attenuation layer partially encapsulates the first photodiode by extending laterally from the first deep trench isolation region to the second deep trench isolation region between the semiconductor material and the buffer oxide layer.
    Type: Application
    Filed: December 30, 2019
    Publication date: July 1, 2021
    Inventors: Yuanliang Liu, Bill Phan, Duli Mao
  • Publication number: 20210151482
    Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.
    Type: Application
    Filed: November 18, 2019
    Publication date: May 20, 2021
    Inventors: Bill Phan, Yuanliang Liu, Duli Mao, Seong Yeol Mun, Alireza Bonakdar
  • Patent number: 10811453
    Abstract: An image sensor includes a plurality of photodiodes arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of deep trench isolation (DTI) structures are formed laterally with respect to the photodiodes on the backside of the semiconductor substrate. The plurality of DTI structures are arranged between adjacent photodiodes. A plurality of pillar structures extend from a metal grid proximate to the backside and is formed proximate to the backside and aligned with the DTI structures.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: October 20, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Seong Yeol Mun, Bill Phan, Alireza Bonakdar
  • Patent number: 10644057
    Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: May 5, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Xin Wang, Dajiang Yang, Siguang Ma, Keiji Mabuchi, Bill Phan, Duli Mao, Dyson Tai
  • Patent number: 10411063
    Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: September 10, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dajiang Yang, Oray Orkun Cellek, Duli Mao, Xianfu Cheng, Xin Wang, Bill Phan, Dyson Tai
  • Publication number: 20190109169
    Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.
    Type: Application
    Filed: October 2, 2018
    Publication date: April 11, 2019
    Inventors: Xin Wang, Dajiang Yang, Siguang Ma, Keiji Mabuchi, Bill Phan, Duli Mao, Dyson Tai
  • Publication number: 20180366513
    Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.
    Type: Application
    Filed: June 20, 2017
    Publication date: December 20, 2018
    Inventors: Dajiang Yang, Oray Orkun Cellek, Duli Mao, Xianfu Cheng, Xin Wang, Bill Phan, Dyson Tai
  • Patent number: 10128299
    Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.
    Type: Grant
    Filed: October 10, 2017
    Date of Patent: November 13, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Xin Wang, Dajiang Yang, Siguang Ma, Keiji Mabuchi, Bill Phan, Duli Mao, Dyson Tai
  • Patent number: 10079261
    Abstract: An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensor also includes a plurality of transfer gates coupled between the plurality of photodiodes and the floating diffusion to transfer the image charge generated in the plurality of photodiodes into the floating diffusion. Peripheral circuitry is disposed proximate to the plurality of photodiodes and coupled to receive the image charge from the plurality of photodiodes. A shallow trench isolation structure is laterally disposed, at least in part, between the plurality of photodiodes and the peripheral circuitry to prevent electrical crosstalk between the plurality of photodiodes and the peripheral circuitry. The peripheral circuitry includes one or more transistors including a source electrode and a drain electrode that are raised above a surface of the semiconductor material.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: September 18, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Qin Wang, Bill Phan, Sing-Chung Hu, Gang Chen
  • Patent number: 10044960
    Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: August 7, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin, Siguang Ma, Dajiang Yang, Boyd Albert Fowler
  • Publication number: 20180098008
    Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 5, 2018
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin
  • Patent number: 9936153
    Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: April 3, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin
  • Publication number: 20170347047
    Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
    Type: Application
    Filed: May 25, 2016
    Publication date: November 30, 2017
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin, Siguang Ma, Dajiang Yang, Boyd Albert Fowler
  • Patent number: 9818791
    Abstract: A stacked image sensor includes a first plurality of photodiodes, including a first photodiode and a second photodiode, disposed in a first semiconductor material. A thickness of the first semiconductor material proximate to the first photodiode is less than the thickness of the first semiconductor material proximate to the second photodiode. A second plurality of photodiodes is disposed in a second semiconductor material. The second plurality of photodiodes is optically aligned with the first plurality of photodiodes. An interconnect layer is disposed between the first semiconductor material and the second semiconductor material. The interconnect layer includes an optical shield disposed between the second photodiode and a third photodiode included in the second plurality of photodiodes. The optical shield prevents a first portion of image light from reaching the third photodiode.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: November 14, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Zhiqiang Lin, Keiji Mabuchi, Gang Chen, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Dajiang Yang