Abstract: A method of hydrogenating carbon dioxide comprises forming a tunable catalyst comprising at least one metal comprising a size within a range of from a single atom to about 999 nanometers and formulated to produce one or more carbon-containing compounds. An electrochemical cell comprising a positive electrode, a negative electrode comprising the tunable catalyst, and an electrolyte between the positive electrode and the negative electrode is formed. Carbon dioxide is introduced to the negative electrode of the electrochemical cell and a potential difference is applied between the positive electrode and the negative electrode to selectively hydrogenate the carbon dioxide. The hydrogen ions are diffused through the electrochemical cell. The carbon dioxide at the negative electrode is hydrogenated to selectively form carbon monoxide, methane, or a desired ratio of carbon monoxide and methane. An electrochemical cell and a carbon dioxide hydrogenation system are also disclosed.

Abstract: An electrochemical cell comprises a positive electrode, a negative electrode comprising a tunable catalyst formulated to selectively hydrogenate carbon dioxide, and an electrolyte between the positive electrode and the negative electrode. The tunable catalyst comprising at least one metal comprising a size within a range of from a single atom to about 999 nanometers and formulated to produce one or more specific carbonaceous product. Also disclosed is an electrochemical cell comprises a positive electrode, a negative electrode comprising a tunable catalyst formulated to selectively hydrogenate carbon dioxide, and an electrolyte between the positive electrode and the negative electrode. The tunable catalyst comprising a transition metal catalyst dispersed and supported on an oxide of at least one lanthanide element. Further disclosed is a carbon dioxide hydrogenation system.

Abstract: A method for fabricating the three-dimensional comb-tooth-shaped groove array surface, the surface of the bearing is first etched with grooves having a certain depth by means of femtosecond lase, then a PTFE film is impressed and attached to the surface of the inner ring of the bearing, the position of a laser focus is adjusted to focus on the lower surface of the PTFE film, the same pit is scanned repeatedly, ripple characteristic stripes occur on the surface of the inner ring of the bearing while the film gasifies instantly under the action of laser ablation heating, a part of polymer material in the gasified part is adsorbed to a mechanical surface in each pit under the action of mechanical interlocking, and a super-oleophobic PTFE surface is obtained in each groove.

Abstract: A cleaning apparatus for a quartz tube includes a cleaning cover with an opening in a bottom, a base vertically assembled with the cleaning cover through movable inserting, a bearing table arranged in the base and holding the quartz tube, and a driving apparatus; a top of the cleaning cover has a first nozzle; a side wall of the cleaning cover vertically has multiple second nozzles; the bearing table vertically has an inner spray tube; a top and a side of the inner spray tube above the bearing table have multiple third nozzles; a rotary sealing apparatus is embedded in the base; the inner spray tube continuously and vertically penetrates through the bearing table and the rotary sealing apparatus; the driving apparatus drives the bearing table to rotate; the inner spray tube remains stationary during rotation of the bearing table.

Abstract: Disclosed by the present invention is a method for preparing a reactive sealant resin, the method comprising: (1) under the action of an alkali catalyst, polymerizing a hydroxyl-containing initiator with an epoxy compound to obtain a polyether polyol; (2) adding an alkoxide reagent and a halogenated end-capping agent containing a double bond to the polyether polyol obtained in step (1) for reaction, so as to obtain a crude double-bonded polyether product, and refining the crude product to obtain a modified polyether product; and (3) subjecting the modified polyether and hydrogen-containing silane to silane end-capping reaction under the action of a hydrosilylation catalyst, so as to obtain the target product, i.e., a reactive sealant resin. The resin has excellent properties as well as good adhesion and paintability.

Abstract: A bearing assembly includes a bearing cantilever, a supporting assembly connected to the bearing cantilever and a first driving device, where the bearing cantilever includes a bearing portion for bearing the semiconductor apparatus accommodating device, a connecting plate and a substrate, the bearing portion being composed of a bearing plate and a bearing support that are horizontally inserted, an opening for exposing a semiconductor apparatus is formed at a bottom of the semiconductor apparatus accommodating device, the bearing plate is provided with a rotatable rotating roller located below the opening, the rotating roller makes contact with an edge of the semiconductor apparatus, and the first driving device drives the rotating roller to rotate by means of a power transmission member, so as to apply a rotating force by means of the rotating roller, to an edge of the semiconductor apparatus inserted into the semiconductor apparatus accommodating device.

Abstract: The invention provides a semiconductor structure, the semiconductor structure includes a dielectric layer, a plurality of MTJ stacked elements and at least one dummy MTJ stacked element located in the dielectric layer, a first nitride layer covering at least the sidewalls of the MTJ stacked elements and the dummy MTJ stacked elements, a second nitride layer covering the top surfaces of the dummy MTJ stacked elements, the thickness of the second nitride layer is greater than the thickness of the first nitride layer, and a plurality of contact structures located in the dielectric layer and electrically connected with each MTJ stacked element.

Abstract: Provided are an ultraviolet light emitting diode (LED) and a manufacturing method thereof. The manufacturing method includes: providing an LED wafer including a substrate and a semiconductor stacked layer, the semiconductor stacked layer has a lower surface and an upper surface, the semiconductor stacked layer includes a first semiconductor layer, a light emitting layer and a second semiconductor layer; focusing a first laser beam and a second laser beam into the substrate, a focusing position of the first laser beam is closer to the lower surface than that of the second laser beam, the first laser beam is focused to form at least one first laser cutting line, laser scratches of each first laser cutting line are quasi-circular, and the at least one first laser cutting line includes a laser cutting line closest to the lower surface; and separating the LED wafer to form LED chips.

Abstract: A cleaning apparatus for a quartz tube includes a cleaning cover with an opening in a bottom, a base vertically assembled with the cleaning cover through movable inserting, a bearing table arranged in the base and holding the quartz tube, and a driving apparatus; a top of the cleaning cover has a first nozzle; a side wall of the cleaning cover vertically has multiple second nozzles; the bearing table vertically has an inner spray tube; a top and a side of the inner spray tube above the bearing table have multiple third nozzles; a rotary sealing apparatus is embedded in the base; the inner spray tube continuously and vertically penetrates through the bearing table and the rotary sealing apparatus; the driving apparatus drives the bearing table to rotate; the inner spray tube remains stationary during rotation of the bearing table.

Abstract: A bearing assembly includes a bearing cantilever, a supporting assembly connected to the bearing cantilever and a first driving device, where the bearing cantilever includes a bearing portion for bearing the semiconductor apparatus accommodating device, a connecting plate and a substrate, the bearing portion being composed of a bearing plate and a bearing support that are horizontally inserted, an opening for exposing a semiconductor apparatus is formed at a bottom of the semiconductor apparatus accommodating device, the bearing plate is provided with a rotatable rotating roller located below the opening, the rotating roller makes contact with an edge of the semiconductor apparatus, and the first driving device drives the rotating roller to rotate by means of a power transmission member, so as to apply a rotating force by means of the rotating roller, to an edge of the semiconductor apparatus inserted into the semiconductor apparatus accommodating device.

Abstract: A method of fabricating vertical cavity surface emitting laser, comprising: providing a first substrate formed with a dielectric DBR and a first bonding layer, and a second substrate formed with a etch-stop layer, a heavily doped layer, an active region, a current-confinement layer, and an arsenide DBR firstly, then sticking a third substrate on the arsenide DBR, then removing the second substrate and the etch-stop layer, next bonding the heavily doped layer to the dielectric DBR, next removing the third substrate, finally forming a p-type electrode contact and an n-type electrode contact.

Abstract: A method of a hydrocarbon product and ammonia comprises introducing C2H6 to a positive electrode of an electrochemical cell comprising the positive electrode, a negative electrode, and a proton-conducting membrane between the positive electrode and the negative electrode. The proton-conducting membrane comprising an electrolyte material having an ionic conductivity greater than or equal to about 10?2 S/cm at one or more temperatures within a range of from about 150° C. to about 600° C. N2 is introduced to the negative electrode of the electrochemical cell. A potential difference is applied between the positive electrode and the negative electrode of the electrochemical cell. A system for co-producing higher hydrocarbons and NH3, and an electrochemical cell are also described.

Abstract: A method for processing account information in a block chain is provided. A computer device receives identity information and a transfer request, the transfer request requesting to transfer a resource in an account to a target account, the target account being generated by a certificate center. The computer device obtains owner information of the account from the certificate center according to the transfer request. The computer device compares the identity information and the owner information. The computer device transmits an authentication request to the block chain in response to determining that the identity information and the owner information are consistent, the authentication request requesting the block chain to transfer the resource in the account to the target account.

Abstract: A method of forming a metal nanomaterial comprises forming a precursor solution comprising a metal precursor and a metal oxide precursor. A complexing agent is added to the precursor solution, and the metal precursor and the metal oxide precursor are hydrolyzed to form a sol. The sol is heated to form a gel, which is calcined to incorporate metal cations from the metal precursor into a metal oxide lattice from the metal oxide precursor. The calcined gel is exposed to a reducing agent to exsolve the metal from the metal oxide lattice and to form a metal nanomaterial comprising a metal and a metal oxide is formed. Additional methods of forming a metal nanomaterial are also disclosed.

Abstract: A method of a hydrocarbon product and ammonia comprises introducing C2H6 to a positive electrode of an electrochemical cell comprising the positive electrode, a negative electrode, and a proton-conducting membrane between the positive electrode and the negative electrode. The proton-conducting membrane comprising an electrolyte material having an ionic conductivity greater than or equal to about 10?2 S/cm at one or more temperatures within a range of from about 150° C. to about 600° C. N2 is introduced to the negative electrode of the electrochemical cell. A potential difference is applied between the positive electrode and the negative electrode of the electrochemical cell. A system for co-producing higher hydrocarbons and NH3, and an electrochemical cell are also described.

Abstract: A method for producing ammonia comprises introducing a first feed stream to a positive electrode of an electrochemical cell. The electrochemical cell comprises the positive electrode, a negative electrode, and an electrolyte between the positive electrode and the negative electrode. A second feed stream comprising a nitrogen source is introduced to the negative electrode and a potential difference is applied between the positive electrode and the negative electrode to produce hydrogen ions, a first product stream comprising carbon monoxide, and a second product stream comprising ammonia. Additional methods and systems are disclosed.

Abstract: A method of hydrogenating carbon dioxide comprises forming a tunable catalyst comprising at least one metal comprising a size within a range of from a single atom to about 999 nanometers and formulated to produce one or more carbon-containing compound. An electrochemical cell comprising a positive electrode, a negative electrode comprising the tunable catalyst, and an electrolyte between the positive electrode and the negative electrode is formed. Carbon dioxide is introduced to the negative electrode of the electrochemical cell and a potential difference is applied between the positive electrode and the negative electrode to selectively hydrogenate the carbon dioxide. The hydrogen ions are diffused through the electrochemical cell. The carbon dioxide at the negative electrode is hydrogenated to selectively form carbon monoxide, methane, or a desired ratio of carbon monoxide and methane. An electrochemical cell and a carbon dioxide hydrogenation system are also disclosed.

Abstract: A method of fabricating vertical cavity surface emitting laser, comprising: providing a first substrate formed with a dielectric DBR and a first bonding layer, and a second substrate formed with a etch-stop layer, a heavily doped layer, an active region, a current-confinement layer, and an arsenide DBR firstly, then sticking a third substrate on the arsenide DBR, then removing the second substrate and the etch-stop layer, next bonding the heavily doped layer to the dielectric DBR, next removing the third substrate, finally forming a p-type electrode contact and an n-type electrode contact.

Abstract: A method for processing an account in a blockchain is provided. A freezing instruction with respect to a target account is received by a computer device. A freezing lock is generated by the computer device based on the received freezing instruction, the freezing lock including a freezing lock public key. A first freezing request is generated by the computer device based on the freezing instruction and the freezing lock public key. The first freezing request is transmitted by the computer device to a device in the blockchain. The first freezing request is a request based on which the target account is frozen by using the freezing lock and resource transfer of the target account is denied.