Abstract: Provided are a recombinant strain with modified gene BBD29_14900, and a method for constructing the same and use thereof, with the production of L-glutamic acid as a specific application. Further provided is a method for introducing a point mutation into the BBD29_14900 gene coding sequence in Corynebacterium or improving the expression thereof. The method can cause a bacterial strain with the mutation to increase the fermentation yield of glutamic acid. The point mutation involves a mutation of the base at position 1114 in the sequence of the BBD29_14900 gene from guanine (G) to adenine (A), and thus a substitution of aspartic acid at position 372 in the coded corresponding amino acid sequence with asparagine.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a memory stack of gate layers and insulating layers. The gate layers and the insulating layers are stacked alternatingly and are formed into stair steps in a staircase region. The semiconductor device includes a first landing pad on a first gate layer of a first stair step. The first gate layer is a top gate layer of the first stair step. The semiconductor device further includes a first sidewall isolation structure on a riser sidewall of a second gate layer of a second stair step. The second gate layer is a top gate layer of the second stair step and is stacked on the first gate layer in the memory stack. The first sidewall isolation structure isolates the second gate layer from the first landing pad.

Abstract: All example composition may include a plurality of grains including an iron nitride phase. The plurality of grains may have an average wain size between about 10 nm and about 200 nm. An example technique may include treating a composition including a plurality of grains including au iron-based phase to adjust an average grain size of the plurality of grains to between about 20 nm and about 100 ma. The example technique may include nitriding the plurality of grains to form or grow an iron nitride phase.

Abstract: A recombinant strain with modified gene BBD29_11265 and a method for constructing the same are provided. The recombinant strain is a bacterium that generates L-glutamic acid, and has an improved expression of a polynucleotide encoding an amino acid sequence of SEQ ID NO: 3 or a homologous sequence thereof; the improved expression can be having a point mutation in, and an enhanced expression of the polynucleotide encoding an amino acid sequence of SEQ ID NO: 3 or a homologous sequence thereof. A genetically engineered bacterium in which the base at position 70 in the BBD29_112665 gene sequence is mutated to adenine from guanine, causing alanine at position 24 in the coded corresponding amino acid sequence to be substituted with threonine, and an engineered bacterium overexpressing the BBD29_112665 gene or BBD29_11265G70A gene are constructed in the present invention, facilitating an increase in the production and conversion rate of L-glutamic acid.

Abstract: A security defending method, a coprocessor, and a processing apparatus are disclosed. The security defending method is applicable in a coprocessor, including: receiving a jump destination encryption request for the operation task; using mask configuration to perform first mask processing on the first jump destination address value to obtain a first intermediate jump destination address value; performing an authentication operation based on the first jump destination storage address, a key reference value corresponding to the operation task and the first intermediate jump destination address value, to obtain a first encryption result value; using the mask configuration to perform second mask processing on the first encryption result value to obtain a first intermediate encryption result value; performing an authentication operation on the first intermediate encryption result value and the first jump destination address value to obtain a first encryption jump destination address value.

Abstract: A full-face shaft tunnel boring machine system includes a tunnel boring machine cutterhead device for tunneling downwards in a shaft; a full-hydraulic formwork device for supporting and walling in a wellbore; and an upper muck-discharge system for vertically conveying rock mucks generated by tunneling. The tunnel boring machine cutterhead device comprises a vertical guide frame, a cutter-expanded boring head and an advanced cutterhead that are fixedly connected in a vertical order from top to bottom so as to form an integrated structure. The vertical guide frame is a hollow cylindrical structure and driven to rotate around an axis of the vertical guide frame by a power mechanism, and an outer wall of the vertical guide frame is provided with multiple sets of first guide rollers.

Abstract: A security defending method and an electronic apparatus are disclosed. The security defending method is applicable in a coprocessor, including: receiving a jump destination encryption request for the operation task; using mask configuration to perform first mask processing on the first jump destination address value to obtain a first intermediate jump destination address value; performing an authentication operation based on the first jump destination storage address, a key reference value corresponding to the operation task and the first intermediate jump destination address value, to obtain a first encryption result value; using the mask configuration to perform second mask processing on the first encryption result value to obtain a first intermediate encryption result value; performing an authentication operation on the first intermediate encryption result value and the first jump destination address value to obtain a first encryption jump destination address value.

Abstract: Circulene compounds of Formula I or Formula II, and organic light emitting devices (OLED) that include an organic layer disposed between an anode and a cathode, wherein the organic layer includes a compound of Formula I or Formula II. In addition, the OLED can be incorporated into one or more of a consumer product, for example, an electronic component module, and/or a lighting panel.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer a titanium aluminide layer, and a middle layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and the middle layer is disposed between the titanium aluminide layer and the titanium nitride barrier layer. The middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer includes titanium and nitrogen. A concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.

Abstract: Provided is a flange (100) connected to an end of an insulating tube (10), the flange includes a flange plate (110) abutting the end of the insulating tube, a groove (111) recessed toward inside of the insulating tube is disposed on the flange plate, the groove is connected to the insulating tube, an inflation valve (120) is disposed within the groove, the groove is filled with sealing material (130) which covers the inflation valve. Provided are also insulator and insulated support post using the flange. The flange, the insulator and insulated support post help to protect the inflation valve from external force and the groove is filled with the sealing material to ensure the sealing performance of the flange.

Abstract: Example nanoparticles may include an iron-based core, and a shell. The shell may include a non-magnetic, anti-ferromagnetic, or ferrimagnetic material. Example alloy compositions may include an iron-based grain, and a grain boundary. The grain boundary may include a non-magnetic, anti-ferromagnetic, or ferrimagnetic material. Example techniques for forming iron-based core-shell nanoparticles may include depositing a shell on an iron-based core. The depositing may include immersing the iron-based core in a salt composition for a predetermined period of time. The depositing may include milling the iron-based core with a salt composition for a predetermined period of time. Example techniques for treating a composition comprising core-shell nanoparticles may include nitriding the composition.

Abstract: A compound having a structure of formula Ir(LA)m(LB)n, where ligand LA has Formula I and ligand LB has Formula II that is useful as an emitter in OLEDs is disclosed.

Abstract: A method and an electronic device for handling a material are provided. The method may include: obtaining a picking task for a target material at a target warehouse; using, in response to determining that a target person arrives at an exit location of the target warehouse, material information of a material held by the target person as target material information, the material information including a material identifier and a material quantity; and comparing material information of a to-be-picked material in the picking task with the target material information, and subtracting the material information of the to-be-picked material from stock information of the target warehouse if a comparison result is that the material information and the target material information are consistent.

Abstract: A compound having a Pt tetradentate structure of Formula 1, is provided. In the structure of Formula 1, rings C and D each independently represent 5- or 6-membered carbocyclic or heterocyclic ring; L1, L2, and L3 are each independently a direct bond, BR, NR, PR, O, S, Se, C?O, S?O, SO2, SiRR?, GeRR?, alkyl, cycloalkyl, or a combination thereof; the sum of n1 and n2 is 1 or 2; X is selected from NRE, O, S, and Se; X3 and X4 each independently carbon or nitrogen; and one of Q1, Q3, and Q4 is oxygen, and the remaining two of Q1, Q3, and Q4 each represents a direct bond. Formulations and devices, such as an OLEDs, that include the compound of Formula 1 are also described.

Abstract: The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an ??-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material.

Abstract: Aspects of the disclosure relate to multi-factor user authentication for card-based payment transactions using blockchain tokens. An computing platform may receive, from a computing device, transaction details associated with a card-based payment transaction corresponding to a user, wherein the transaction details comprise a card number of a payment card. The computing platform may determine, based on the card number, a user device associated with the user. The computing platform may send, to the user device, a one-time passcode (OTP). After sending the OTP, the computing platform may receive a security key. The security key may be generated based on the sent OTP and a blockchain token hash. The computing platform may, based on the received security key, send, to the computing device, a message indicating whether the transaction is approved or declined.

Abstract: An example composition may include a plurality of grains including an iron nitride phase. The plurality of grains may have an average grain size between about 10 nm and about 200 nm. An example technique may include treating a composition including a plurality of grains including an iron-based phase to adjust an average grain size of the plurality of grains to between about 20 nm and about 100 nm. The example technique may include nitriding the plurality of grains to form or grow an iron nitride phase.

Abstract: The present disclosure provides a method for acquiring an item placing state, including: sending an acquisition request, wherein the acquisition request includes one or more association relationships, each of the association relationships includes an association relationship between a hot zone and a camera equipment, and one hot zone corresponds to one kind of item; and receiving a placing state of an item corresponding to at least one hot zone, wherein the placing state of the item corresponding to the at least one hot zone is determined according to a current image and a standard image of the at least one hot zone in response to the acquisition request. The present disclosure further provides a processing method, a system for acquiring an item placing state and a processing system.

Abstract: Provided are compounds of Formula (I), or pharmaceutically acceptable salts thereof, and methods for their use and production.

Abstract: A neutral compound including a first ligand LA represented by Formula I or Formula II is disclosed.