Patents by Inventor Bin-Ming Benjamin Tsai
Bin-Ming Benjamin Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10788759Abstract: Prediction based systems and methods for optimizing wafer chucking and lithography control are disclosed. Distortions predicted to occur when a wafer is chucked by a chucking device are calculated and are utilized to control chucking parameters of the chucking device. Chucking parameters may include chucking pressures and chucking sequences. In addition, predicted distortions may also be utilized to facilitate application of anticipatory corrections. Controlling chucking parameters and/or applying anticipatory corrections help reducing or minimizing overlay errors.Type: GrantFiled: July 30, 2018Date of Patent: September 29, 2020Assignee: KLA-Tencor CorporationInventors: Bin-Ming Benjamin Tsai, Oreste Donzella, Pradeep Vukkadala, Jaydeep Sinha
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Patent number: 10325004Abstract: Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.Type: GrantFiled: March 2, 2016Date of Patent: June 18, 2019Assignee: KLA-TENCOR CORPORATIONInventors: Thaddeus G. Dziura, Yung-Ho Chuang, Bin-Ming Benjamin Tsai, Xuefeng Liu, John J. Hench
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Publication number: 20180364579Abstract: Prediction based systems and methods for optimizing wafer chucking and lithography control are disclosed. Distortions predicted to occur when a wafer is chucked by a chucking device are calculated and are utilized to control chucking parameters of the chucking device. Chucking parameters may include chucking pressures and chucking sequences. In addition, predicted distortions may also be utilized to facilitate application of anticipatory corrections. Controlling chucking parameters and/or applying anticipatory corrections help reducing or minimizing overlay errors.Type: ApplicationFiled: July 30, 2018Publication date: December 20, 2018Inventors: Bin-Ming Benjamin Tsai, Oreste Donzella, Pradeep Vukkadala, Jaydeep Sinha
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Patent number: 10036964Abstract: Prediction based systems and methods for optimizing wafer chucking and lithography control are disclosed. Distortions predicted to occur when a wafer is chucked by a chucking device are calculated and are utilized to control chucking parameters of the chucking device. Chucking parameters may include chucking pressures and chucking sequences. In addition, predicted distortions may also be utilized to facilitate application of anticipatory corrections. Controlling chucking parameters and/or applying anticipatory corrections help reducing or minimizing overlay errors.Type: GrantFiled: March 12, 2015Date of Patent: July 31, 2018Assignee: KLA-Tencor CorporationInventors: Bin-Ming Benjamin Tsai, Oreste Donzella, Pradeep Vukkadala, Jaydeep Sinha
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Publication number: 20160239600Abstract: Prediction based systems and methods for optimizing wafer chucking and lithography control are disclosed. Distortions predicted to occur when a wafer is chucked by a chucking device are calculated and are utilized to control chucking parameters of the chucking device. Chucking parameters may include chucking pressures and chucking sequences. In addition, predicted distortions may also be utilized to facilitate application of anticipatory corrections. Controlling chucking parameters and/or applying anticipatory corrections help reducing or minimizing overlay errors.Type: ApplicationFiled: March 12, 2015Publication date: August 18, 2016Inventors: Bin-Ming Benjamin Tsai, Oreste Donzella, Pradeep Vukkadala, Jaydeep Sinha
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Patent number: 9377414Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.Type: GrantFiled: April 1, 2014Date of Patent: June 28, 2016Assignee: KLA-Tencor CorporationInventors: Yung-Ho Chuang, Richard W. Solarz, David R. Shafer, Bin-Ming Benjamin Tsai, David L. Brown
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Patent number: 9310296Abstract: Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.Type: GrantFiled: June 20, 2011Date of Patent: April 12, 2016Assignee: KLA-TENCOR CORPORATIONInventors: Thaddeus G. Dziura, Yung-Ho Chuang, Bin-ming Benjamin Tsai, Xuefeng Liu, John J. Hench
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Patent number: 8962351Abstract: The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurality of values of at least one parameter of the wafer following ion implantation of the wafer by the implanter, wherein the first dopant metrology system and the second dopant metrology system are communicatively coupled, an annealer configured to anneal the wafer following ion implantation, and a third dopant metrology system configured to measure a third plurality of values of at least one parameter of the wafer following annealing of the wafer by the annealer, wherein the second dopant metrology system and the third dopant metrology system are communicatively coupled.Type: GrantFiled: September 9, 2013Date of Patent: February 24, 2015Assignee: KLA-Tencor CorporationInventors: Alex Salnik, Bin-Ming Benjamin Tsai, Lena Nicolaides
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Patent number: 8879073Abstract: Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs.Type: GrantFiled: February 19, 2013Date of Patent: November 4, 2014Assignee: KLA-Tencor CorporationInventors: Jonathan M. Madsen, Andrei V. Shchegrov, Michael Bakeman, Thaddeus Gerard Dziura, Alexander Kuznetsov, Bin-Ming (Benjamin) Tsai
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Patent number: 8832611Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.Type: GrantFiled: June 17, 2013Date of Patent: September 9, 2014Assignee: KLA-Tencor Corp.Inventors: Xuefeng Liu, Yung-Ho Alex Chuang, John Fielden, Bin-Ming Benjamin Tsai, Jingjing Zhang
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Publication number: 20140217299Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.Type: ApplicationFiled: April 1, 2014Publication date: August 7, 2014Applicant: KLA-Tencor CorporationInventors: Yung-Ho Chuang, Richard W. Solarz, David R. Shafer, Bin-Ming Benjamin Tsai, David L. Brown
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Patent number: 8692986Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.Type: GrantFiled: August 29, 2013Date of Patent: April 8, 2014Assignee: KLA-Tencor CorporationInventors: Yung-Ho Chuang, Richard W. Solarz, David R. Shafer, Bin-Ming Benjamin Tsai, David L. Brown
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Publication number: 20140001370Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.Type: ApplicationFiled: August 29, 2013Publication date: January 2, 2014Applicant: KLA-Tencor CorporationInventors: Yung-Ho Chuang, Richard W. Solarz, David R. Shafer, Bin-Ming Benjamin Tsai, David L. Brown
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Publication number: 20130282340Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.Type: ApplicationFiled: June 17, 2013Publication date: October 24, 2013Inventors: Xuefeng Liu, Yung-Ho Alex Chuang, John Fielden, Bin-Ming Benjamin Tsai, Jingjing Zhang
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Patent number: 8553217Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.Type: GrantFiled: June 18, 2010Date of Patent: October 8, 2013Assignee: KLA-Tencor CorporationInventors: Yung-Ho Chuang, Richard W. Solarz, David R. Shafer, Bin-Ming Benjamin Tsai, David L. Brown
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Patent number: 8535957Abstract: The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurality of values of at least one parameter of the wafer following ion implantation of the wafer by the implanter, wherein the first dopant metrology system and the second dopant metrology system are communicatively coupled, an annealer configured to anneal the wafer following ion implantation, and a third dopant metrology system configured to measure a third plurality of values of at least one parameter of the wafer following annealing of the wafer by the annealer, wherein the second dopant metrology system and the third dopant metrology system are communicatively coupled.Type: GrantFiled: March 31, 2011Date of Patent: September 17, 2013Assignee: KLA-Tencor CorporationInventors: Alex Salnik, Bin-Ming Benjamin Tsai, Lena Nicolaides
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Patent number: 8468471Abstract: Systems and methods for process aware metrology are provided.Type: GrantFiled: March 2, 2012Date of Patent: June 18, 2013Assignee: KLA-Tencor Corp.Inventors: Xuefeng Liu, Yung-Ho Alex Chuang, John Fielden, Bin-Ming Benjamin Tsai, Jingjing Zhang
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Publication number: 20130080984Abstract: Systems and methods for process aware metrology are provided.Type: ApplicationFiled: March 2, 2012Publication date: March 28, 2013Applicant: KLA-TENCOR CORPORATIONInventors: Xuefeng Liu, Yung-Ho Alex Chuang, John Fielden, Bin-Ming Benjamin Tsai, Jingjing Zhang
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Publication number: 20120323356Abstract: Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.Type: ApplicationFiled: June 20, 2011Publication date: December 20, 2012Inventors: Thaddeus G. Dziura, Yung-Ho Chuang, Bin-Ming Benjamin Tsai, Xuefeng Liu, John J. Hench
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Patent number: 7773296Abstract: An ultra-broadband ultraviolet (UV) catadioptric imaging microscope system with wide-range zoom capability. The microscope system, which includes a catadioptric lens group and a zooming tube lens group, has high optical resolution in the deep UV wavelengths, continuously adjustable magnification, and a high numerical aperture. The system integrates microscope modules such as objectives, tube lenses and zoom optics to reduce the number of components, and to simplify the system manufacturing process. The preferred embodiment offers excellent image quality across a very broad deep ultraviolet spectral range, combined with an all-refractive zooming tube lens. The zooming tube lens is modified to compensate for higher-order chromatic aberrations that would normally limit performance.Type: GrantFiled: September 5, 2008Date of Patent: August 10, 2010Assignee: KLA-Tencor CorporationInventors: David R. Shafer, Yung-Ho Chuang, Bin-Ming Benjamin Tsai