Patents by Inventor Bin-Ming Benjamin Tsai
Bin-Ming Benjamin Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7728968Abstract: A system and method for inspecting a specimen, such as a semiconductor wafer, including illuminating at least a portion of the specimen using an excimer source using at least one relatively intense wavelength from the source, detecting radiation received from the illuminated portion of the specimen, analyzing the detected radiation for potential defects present in the specimen portion.Type: GrantFiled: November 8, 2006Date of Patent: June 1, 2010Assignee: KLA-Tencor Technologies CorporationInventors: Bin-Ming Benjamin Tsai, Yung-Ho Chuang, J. Joseph Armstrong, David Lee Brown
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Publication number: 20100033716Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.Type: ApplicationFiled: October 2, 2009Publication date: February 11, 2010Inventors: Bin-Ming Benjamin Tsai, Russell M. Pon
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Patent number: 7660686Abstract: Samples subject to ion implantation are measured using a modulated optical reflectance system and the results of the measurements are compared to specification ranges for acceptable samples and a plurality of parametric ranges. Each parametric range is associated with a different known type of implantation fault. Measurement results outside of the specification range may be characterized by fault type by comparing the measurement results to a plurality of parametric ranges. In this way, a fault type may be quickly identified and the corresponding source of the fault may be corrected.Type: GrantFiled: April 7, 2008Date of Patent: February 9, 2010Assignee: KLA-Tencor CorporationInventors: Lena Nicolaides, Alexei Salnik, Bin-ming Benjamin Tsai
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Patent number: 7554655Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: GrantFiled: May 22, 2008Date of Patent: June 30, 2009Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7522275Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.Type: GrantFiled: August 14, 2007Date of Patent: April 21, 2009Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Publication number: 20080285023Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.Type: ApplicationFiled: June 23, 2008Publication date: November 20, 2008Inventors: Bin-Ming Benjamin Tsai, Russell M. Pon
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Publication number: 20080225298Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: ApplicationFiled: May 22, 2008Publication date: September 18, 2008Applicant: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7399950Abstract: A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask.Type: GrantFiled: September 15, 2006Date of Patent: July 15, 2008Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Bin-Ming Benjamin Tsai, Scott A. Young
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Patent number: 7379173Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control.Type: GrantFiled: July 9, 2004Date of Patent: May 27, 2008Assignee: KLA-Tencor CorporationInventors: Christopher R Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Publication number: 20070291257Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.Type: ApplicationFiled: August 27, 2007Publication date: December 20, 2007Inventors: Bin-Ming Benjamin Tsai, Russell Pon
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Patent number: 7259844Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: GrantFiled: January 12, 2007Date of Patent: August 21, 2007Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7164475Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.Type: GrantFiled: November 4, 2004Date of Patent: January 16, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Christopher R Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 7136159Abstract: A system and method for inspecting a specimen, such as a semiconductor wafer, including illuminating at least a portion of the specimen using an excimer source using at least one relatively intense wavelength from the source, detecting radiation received from the illuminated portion of the specimen, analyzing the detected radiation for potential defects present in the specimen portion.Type: GrantFiled: March 12, 2002Date of Patent: November 14, 2006Assignee: KLA-Tencor Technologies CorporationInventors: Bin-Ming Benjamin Tsai, Yung-Ho Chuang, J. Joseph Armstrong, David Lee Brown
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Patent number: 7126100Abstract: A variable modulated transfer function (MTF) design employing a variable gate voltage source for use in inspecting specimens is disclosed. The design applies a variable gate voltage to each pixel of a sensor, wherein applying the variable gate voltage to each pixel adjusts the MTF of the pixel. MTF adjustment improves adverse effects encountered during inspection, such as aliasing and maintaining contrast.Type: GrantFiled: May 21, 2004Date of Patent: October 24, 2006Assignee: KLA-Tencor Technologies CorporationInventors: Yung-Ho Chuang, J. Joseph Armstrong, David Lee Brown, Bin-Ming Benjamin Tsai
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Patent number: 7109458Abstract: A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask.Type: GrantFiled: March 14, 2005Date of Patent: September 19, 2006Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Bin-Ming Benjamin Tsai, Scott A. Young
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Patent number: 6867406Abstract: A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask.Type: GrantFiled: March 23, 2000Date of Patent: March 15, 2005Assignee: KLA-Tencor CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Bin-Ming Benjamin Tsai, Scott A. Young
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Publication number: 20040252297Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: ApplicationFiled: July 9, 2004Publication date: December 16, 2004Applicant: KLA-Tencor Technologies CorporationInventors: Christopher R. Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Publication number: 20040223146Abstract: A method and inspection system to inspect a first pattern on a specimen for defects against a second pattern that is intended to be the same where the second pattern has known responses to at least one probe. The inspection is performed by applying at least one probe to a point of the first pattern on the specimen to generate at least two responses from the specimen. Then the first and second responses are detected from the first pattern, and each of those responses is then compared with the corresponding response from the same point of the second pattern to develop first and second response difference signals. Those first and second response difference signals are then processed together to unilaterally determine a first pattern defect list.Type: ApplicationFiled: June 17, 2004Publication date: November 11, 2004Applicant: KLA INSTRUMENTS CORPORATIONInventors: Bin-Ming Benjamin Tsai, Russell M. Pon
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Patent number: 6816249Abstract: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens.Type: GrantFiled: July 17, 2001Date of Patent: November 9, 2004Assignee: KLA-Tencor CorporationInventors: Christopher R Fairley, Tao-Yi Fu, Gershon Perelman, Bin-Ming Benjamin Tsai
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Patent number: 6771806Abstract: Disclosed is a method for detecting electrical defects on test structures of a semiconductor die. The test structures includes a plurality of electrically-isolated test structures and a plurality of non-electrically-isolated test structures. The test structures each has a portion located partially within a scan area. The portion of the test structures located within the scan area is scanned to obtain voltage contrast images of the test structures' portions. In a multi-pixel processor, the obtained voltage contrast images are analyzed to determine whether there are defects present within the test structures. In a preferred embodiment, the multi-pixel processor operates with pixel resolution sizes in a range of about 25 nm to 200 nm. In another aspect, the processor operates with a pixel size nominally equivalent to two times a width of the test structure's line width to maximize throughput at optimal signal to noise sensitivity.Type: GrantFiled: August 25, 2000Date of Patent: August 3, 2004Assignee: KLA-TencorInventors: Akella V. S. Satya, David L. Adler, Bin-Ming Benjamin Tsai, David J. Walker