Abstract: Acoustic wave resonators are disclosed that include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a rotation angle and a tilt angle. The rotation angle and the tilt angle can together increase a figure of merit of the acoustic wave device. The rotation angle and the tilt angle can both be non-zero.

Abstract: A surface acoustic wave (SAW) resonator comprises a plurality of interdigital transducer (IDT) electrodes disposed on a multilayer piezoelectric substrate including a layer of piezoelectric material having a lower surface bonded to an upper surface of a layer of a dielectric material. The dielectric material has a lower surface bonded to an upper surface of a carrier substrate. The plurality of IDT electrodes include an upper layer and a lower layer. The upper layer is formed of a material having a higher conductivity than the lower layer. The lower layer is formed of a material having a higher density than the upper layer to provide for reduction in size of the SAW resonator.

Abstract: Disclosed is a multi-dimensional analysis method for a tripping risk of a whole transmission line due to a lightning shielding failure. A quantity of thunderstorm days, a tower size, a terrain proportion, an altitude, and insulation configuration data are collected for a transmission line for which a tripping risk due to a lightning shielding failure needs to be analyzed, and a striking distance, an exposure distance, a lightning resisting level of the line after altitude factor correction, and a lightning shielding failure risk of a single-base tower are calculated in turn. Characteristics of a lightning shielding failure under different nominal heights, quantities of thunderstorm days, and terrains are studied. Representative combination conditions are selected to calculate a tripping risk of a typical tower due to the lightning shielding failure. A weight coefficient is extracted, to calculate a tripping risk of the whole line due to the lightning shielding failure.

Abstract: A five-point deconvolution method for quantification of uranium ores by energy spectrum logging disclosed by the invention refers to: carry out ? spectrum logging along the borehole to obtain logging curves in multiple energy zones, using these logging curves and energy spectrum features, inversion calculate the distribution of uranium content along the borehole; the main features are: first, realize the subdivision interpretation of layered strata; second, realize multi-element stripping for energy spectrum logging; third, realize subdivision interpretation by the five-point deconvolution methods; fourth, on-site uranium ores quantification under fast spectral logging conditions can be realized; the invention also discloses two types of algorithm flows of “first stripping, then subdividing” and “first subdividing, then stripping” and the formula for solving the uranium/thorium/potassium content of the unit layer.

Abstract: Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. A thickness of the interdigital transducer electrode is at least 40% of a thickness of the piezoelectric layer, 400 nm, or 0.08? where ? is the wavelength generated by the acoustic wave device.

Abstract: Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode having a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. The interdigital transducer electrode is configured to shift stopband of the acoustic wave device and to reduce a slanted stopband.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a tilt angle of at least 12 degrees. The acoustic wave device being configured to generate a surface acoustic wave having a wavelength L.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a non-zero tilt angle that provides an improved quality factor as compared to a zero tilt angle. The acoustic wave device is configured to generate a surface acoustic wave having a wavelength L. A total number of fingers of the interdigital transducer electrode is between 50 L and 100 L. A width between a finger of the interdigital transducer electrode and an adjacent finger of interdigital transducer electrode is between 20 L and 40 L.

Abstract: This application discloses an information exchange method and apparatus. In the method, a terminal device transmits attach request information to a core network device, receives attach accept information of the core network device, where the attach accept information includes a first integrity check code; the terminal device obtains a second integrity check code based on the attach accept information; and the terminal device obtains, if the first integrity check code is the same as the second integrity check code, a third integrity check code based on encrypted attach complete information, and transmits encrypted attach complete information to which the third integrity check code is added to the core network device. This reduces data exchange procedures, reduces an amount of data of exchanged information, and reduces a time consumed in an information exchange process performed between the terminal device and the core network device.

Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with raised and recessed frame portions formed in a top electrode. The FBAR can include a substrate, a piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.

Abstract: A film bulk acoustic wave resonator (FBAR) is disclosed with recessed and raised frame portions in the piezoelectric film. The FBAR can include a substrate, the piezoelectric film supported to oscillate in a direction opposite to a main surface of the substrate, and a pair of top and bottom electrodes formed respectively on top and bottom surfaces of the film. The recessed frame portion and the raised frame portion can be formed in the film to extend adjacent to each other along a periphery of an active region of the film oscillating during an operation of the film on a top surface of the top electrode.

Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Abstract: Acoustic wave resonators are disclosed that include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a rotation angle and a tilt angle. The rotation angle and the tilt angle can together increase a figure of merit of the acoustic wave device. The rotation angle and the tilt angle can both be non-zero.

Abstract: An acoustic wave resonator comprises a carrier substrate, a layer of dielectric material disposed on an upper surface of the carrier substrate, and a layer of piezoelectric material disposed above the layer of dielectric material. The layer of piezoelectric material includes a pair of opposing terminating edges that are coterminous with the layer of dielectric material. One or more interdigital transducers (IDTs) are disposed on the layer of piezoelectric material. The opposing terminating edges sandwich the one or more interdigital transducers, and in some examples, a pair of reflector gratings disposed on the layer of piezoelectric material and each including less than eight reflector fingers. The opposing terminating edges provide edge reflections that allow a reduction in size or a complete removal of the reflector gratings, resulting in a smaller acoustic wave resonator compared to conventional devices while maintaining a comparable performance.

Abstract: Embodiments of the invention relate to a surface acoustic wave device including a piezoelectric substrate, an interdigital transducer electrode on the piezoelectric substrate and a first thermally conductive layer arranged over the piezoelectric substrate and interdigital transducer electrode. The first thermally conductive layer is spaced apart from the piezoelectric substrate and interdigital transducer electrode. The surface acoustic wave device also includes a second thermally conductive layer configured to dissipate heat generated by the surface acoustic wave device. The second thermally conductive layer is arranged on an opposing side of the piezoelectric substrate to the interdigital transducer electrode. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.

Abstract: An acoustic wave device, a method of manufacture of the same, and a radio frequency filter including the same. The acoustic wave device comprises a multilayer piezoelectric substrate (MPS) including a layer of piezoelectric material having a lower surface disposed on an upper surface of a layer of a dielectric material having a lower surface disposed on an upper surface of a carrier substrate. An interdigital transducer (IDT) is disposed on the multilayer piezoelectric substrate and includes an active region configured to generate an acoustic wave. First and second high impedance portions are included within the multilayer piezoelectric substrate, the first and second high impedance portions each positioned outside the active region of the interdigital transducer and extending in the direction of propagation of the acoustic wave to be generated by the interdigital transducer. The first and second high impedance portions reduce side leakage and suppress transverse modes.

Abstract: A method of manufacturing a surface acoustic wave resonator includes forming or providing a support substrate layer, forming or providing piezoelectric layer of lithium niobate over the support substrate layer, and forming or providing an interdigital transducer electrode including a plurality of fingers over the piezoelectric layer. The piezoelectric layer formed or provided having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k2.

Abstract: A surface acoustic wave device has a piezoelectric substrate having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k2.

Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.