Abstract: A semiconductor structure includes a semiconductor substrate, a trench being provided in the semiconductor substrate, and a gate being formed in the trench; an ion implantation layer located in the semiconductor substrate outside the trench, a top surface of the ion implantation layer being higher than that of the gate, and a bottom surface of the ion implantation layer being lower than the top surface of the gate and higher than a bottom surface of the gate; a transition layer located between the gate and the ion implantation layer, a bottom surface of the transition layer being lower than the top surface of the gate and higher than the bottom surface of the gate, and a doping concentration of the transition layer being lower than that of the ion implantation layer.

Abstract: Three-dimensional (3D) interconnect structures employing via layer conductive structures in via layers are disclosed. The via layer conductive structures in a signal path in an interconnect structure are disposed in respective via layers adjacent to metal lines in metal layers. The via layer conductive structures increase the conductive cross-sections of signal paths between devices in an integrated circuit (IC) or to/from an external contact. The via layer conductive structures provide one or both of supplementing the height dimensions of metal lines and electrically coupling metal lines in the same or different metal layers to increase the conductive cross-section of a signal path. The increased conductive cross-section reduces current-resistance (IR) drop of signals and increases signal speed. As metal track pitches are reduced in size, signal path resistance increases. The via layer conductive structures are provided to reduce or avoid an even greater increase in resistance in the signal paths.

Abstract: A switch device structure includes RF1-st and RF2-nd input terminals, RFA-th, RFB-th and RFC-th output terminals, P2A-th, P1B-th and P1C-th paths, and first and second common paths. The P2A-th path includes a first terminal, and a second terminal coupled to the RFA-th output terminal. The P1B-th path includes a first terminal, and a second terminal coupled to the RFB-th output terminal. The P1C-th path includes a first terminal, and a second terminal coupled to the RFC-th output terminal. The first common path is coupled to the RF2-nd input terminal and the first terminal of the P2A-th path. The second common path is coupled to the RF1-st input terminal, the first terminal of the P1B-th path, and the first terminal of the P1C-th path. The first and second common paths cross each other on different planes to form a crossover.

Abstract: Provided are a novel promoter, a vector including the same, a microorganism including the same, and a method of producing glutathione using the same.

Abstract: A system includes a first park circuit having a signal input, an output, and a control input. The system also includes a first signal path having an input and an output, wherein the input of the first signal path is coupled to the output of the first park circuit. The system also includes a second park circuit having a signal input, an output, and a control input, wherein the signal input of the second park circuit is coupled to the output of the first signal path. The system further includes a second signal path having an input and an output, wherein the input of the second signal path is coupled to the output of the second park circuit.

Abstract: A disclosed multimode optical fiber comprises a core and a cladding surrounding the core. The core has an outer radius r1 in between 20 ?m and 30 ?m. The cladding includes a first outer cladding region having an outer radius r4a and a second outer cladding region having an outer radius r4b less than or equal to 45 ?m. The second outer cladding region comprises silica-based glass doped with titania. The optical fiber further includes a primary coating with an outer radius r5 less than or equal to 80 ?m, and a thickness (r5?r4) less than or equal to 30 ?m. The optical fiber further includes a secondary coating with an outer radius r6 less than or equal to 100 ?m. The secondary coating has a thickness (r6?r5) less than or equal to 30 ?m, and a normalized puncture load greater than 3.6×10?3 g/micron2.

Abstract: A method for increasing bulkiness of reconstituted tobacco by adding tobacco stem particles includes (1) pulverizing a first portion of tobacco stems to obtain tobacco stem particles; (2) classifying the tobacco stem particles with mesh sieves and selecting the tobacco stem particles with a predetermined mesh size; (3) extracting a second portion of the tobacco stems with water and grinding to form a tobacco stem slurry that has a beating degree of 12-14° SR, and mixing the tobacco stem slurry with tobacco leaves in a weight ratio of 6:4 and grinding to obtaining a tobacco slurry that has a beating degree of 18-20° SR; (4) cutting plant fiber pulp boards and dispersing in water to form a plant fiber pulp; (5) preparing a filler solution that contains 10 wt % of a mineral filler; (6) mixing, rolling and drying to obtain the reconstituted tobacco.

Abstract: A fold testing device, including a support mechanism, an adjusting mechanism, and an attaching mechanism. The support mechanism includes a supporting body, a first position limiting part, and a second position limiting part. The first position limiting part and the second position limiting part are arranged on a side of the supporting body along a first direction. The supporting body, the first position limiting part and the second position limiting part are enclosed to form a positioning part. A flexible display module is received in the positioning part. The adjusting mechanism is installed on the supporting body, and configured to drive at least one of the first position limiting part and the second position limiting part to move along the first direction. The attaching mechanism includes an elastic attaching body. The elastic attaching body is movable toward the supporting body along a second direction. The elastic attaching body engages with the positioning part.

Abstract: Provided are systems and methods that perform multi-task and/or multi-sensor fusion for three-dimensional object detection in furtherance of, for example, autonomous vehicle perception and control. In particular, according to one aspect of the present disclosure, example systems and methods described herein exploit simultaneous training of a machine-learned model ensemble relative to multiple related tasks to learn to perform more accurate multi-sensor 3D object detection. For example, the present disclosure provides an end-to-end learnable architecture with multiple machine-learned models that interoperate to reason about 2D and/or 3D object detection as well as one or more auxiliary tasks. According to another aspect of the present disclosure, example systems and methods described herein can perform multi-sensor fusion (e.g.

Abstract: Indoor personnel information identifying apparatus and method for assisting an air conditioning system of on-demand air supply are provided, the apparatus includes a data acquisition device, an information processing device and an information display device, the data acquisition device is configured to acquire weight information and shoe image information of personnel in real time, the information processing device is configured to predict an total calorific value of indoor personnel according to a real-time number of indoor personnel and obtain recommended air supply parameter information for the air conditioning system according to the total calorific value, the information display device is configured to receive and display personnel information processed by the data acquisition device and the information processing device and the recommended air supply parameter information.

Abstract: An indoor unit apparatus of a split-type air conditioner and a method for using the same are provided, which can realize both of an impinging jet ventilation manner and a displacement ventilation manner. A thin air layer can be formed on the ground through using the indoor unit apparatus of a split-type air conditioner, and the indoor unit apparatus of a split-type air conditioner is adapted to be used both in summer and in winter.

Abstract: A diagnosis report generation method and terminal device are provided. The method includes obtaining electrocardiography ECG data, determining that the ECG data includes abnormal heartbeat data, obtaining, based on the ECG data, an abnormal heartbeat waveform corresponding to the abnormal heartbeat data, combining a normal heartbeat waveform and the abnormal heartbeat waveform to obtain an abnormality comparison image, and generating a diagnosis report based on the abnormality comparison image. The abnormal heartbeat waveform is obtained by extracting and analyzing the ECG data, so that the abnormal heartbeat waveform can be combined and compared with the normal heartbeat waveform, to obtain the abnormality comparison image for generating the diagnosis report.

Abstract: The present disclosure provides coating compositions and cured products formed from the coating compositions. The cured products can be formed at high cure speeds from the coating compositions and feature low Young's modulus, high tear strength, and/or high tensile toughness. The cured products can be used as primary coatings for optical fibers. The primary coatings provide good microbending performance and are resistant to defect formation during fiber coating processing and handling operations. The coating compositions include an oligomer, an alkoxylated monofunctional acrylate monomer, and preferably, an N-vinyl amide compound.

Abstract: Disclosed are semiconductor devices including a double gate metal oxide semiconductor (MOS) transistor and methods for fabricating the same. The double gate MOS transistor includes a first back gate, a second back gate, and a first dielectric layer disposed on the first back gate and on the second back gate. An MX2 material layer is disposed on the first dielectric layer, a second dielectric layer disposed on the MX2 material layer, and a work function metal (WFM) is disposed on the second dielectric layer. A front gate is disposed on the WFM, which fills a space between the first back gate and the second back.

Abstract: An automatically-cleanable thickening performance evaluation instrument for drilling LCMs includes a cleaning device, a kettle body, a thickening motor, a heating component, a test ending component, a top cover, and a bottom cover, where upper and lower ends of the kettle body are both opened; the kettle body is arranged in a third bearing inner race, a third bearing outer race is connected to a first limb, and the first limb is configured to limit a position of the kettle body; and the kettle body is detachably connected to the thickening motor and driven by the thickening motor to rotate. The instrument can realize electric heating and air pressurization to simulate the underground environment, and the kettle body can be completely sealed, such that a measured thickening time is close to an actual thickening time. Moreover, the instrument can be automatically cleaned at the end of a test.

Abstract: A method for forming an integrated circuit device is provided. The method includes forming a transistor over a frontside of a substrate; forming an interconnect structure over the transistor; depositing a first transition metal layer over the interconnect structure; performing a plasma treatment to turn the first transition metal layer into a first transition metal dichalcogenide layer; forming a dielectric layer over the first transition metal dichalcogenide layer; forming a first gate electrode over the dielectric layer and a first portion of the first transition metal dichalcogenide layer; and forming a first source contact and a first drain contact respectively connected with a second portion and a third portion of the first transition metal dichalcogenide layer, the first portion of the first transition metal dichalcogenide layer being between the second and third portions of the first transition metal dichalcogenide layers.

Abstract: Systems, methods, tangible non-transitory computer-readable media, and devices associated with object perception and prediction of object motion are provided. For example, a plurality of temporal instance representations can be generated. Each temporal instance representation can be associated with differences in the appearance and motion of objects over past time intervals. Past paths and candidate paths of a set of objects can be determined based on the temporal instance representations and current detections of objects. Predicted paths of the set of objects using a machine-learned model trained that uses the past paths and candidate paths to determine the predicted paths. Past path data that includes information associated with the predicted paths can be generated for each object of the set of objects respectively.

Abstract: The present disclosure provides a manufacturing method of a semiconductor structure, and a semiconductor structure. The manufacturing method of a semiconductor structure includes: forming a plurality of cylindrical capacitors in an initial structure; removing part of the initial structure to form trenches, the trenches expose partial sidewalls of the cylindrical capacitors and a substrate of the initial structure; forming a dielectric layer, the dielectric layer at least covers an exposed surface of each of the cylindrical capacitors; forming a first top electrode, the first top electrode covers a surface of the dielectric layer; and forming a second top electrode, the second top electrode covers a surface of the first top electrode. In an axial direction of each of the cylindrical capacitors, the second top electrode formed in each of the trenches has a discontinuous part, and an air gap is formed in the discontinuous part of the second top electrode.

Abstract: A method for preparing a semiconductor device is provided. The method for preparing the semiconductor device includes: providing a substrate, and forming a first dielectric layer on one side of the substrate, where the substrate includes an array area and a peripheral area arranged outside of the array area; forming an initial mask pattern on one side of the first dielectric layer away from the substrate; performing at least two patterning processes on the initial mask pattern, to form a first mask pattern in the array area and to form a second mask pattern in the peripheral area. The first mask pattern has a first height, the second mask pattern has a second height, and the second height is greater than the first height. Both of the array area and the peripheral area are exposed by using each of the at least two patterning processes.

Abstract: A semiconductor device manufacturing method includes: providing a semiconductor base; patterning the first medium layer to form a groove extending along the base in the base; forming a first auxiliary layer and a first metal layer sequentially in the groove, where the first metal layer is located on the side of the first auxiliary layer towards the first medium layer; thinning the base on the second surface of the base to expose the first auxiliary layer; removing the first auxiliary layer to form a first opening; and forming a second metal layer on the second surface of the base, where the second metal layer fills the first opening.