Patents by Inventor Bing-Hung Chen

Bing-Hung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11227788
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: January 18, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Teng-Chun Tsai, Bing-Hung Chen, Chien-Hsun Wang, Cheng-Tung Lin, Chih-Tang Peng, De-Fang Chen, Huan-Just Lin, Li-Ting Wang, Yung-Cheng Lu
  • Patent number: 11145752
    Abstract: A method includes forming a gate dielectric layer, forming a metal gate strip over a bottom portion of the gate dielectric layer, and performing a first etching process on the metal gate strip to remove a portion of the metal gate strip. The first etching process is performed anisotropically. After the first etching process, a second etching process is performed on the metal gate strip to remove a residue portion of the metal gate strip. The second etching process includes an isotropic etching process. A dielectric material is filled into a recess left by the etched portion and the etched residue portion of the metal gate strip.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: October 12, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chieh-Ning Feng, Chih-Chang Hung, Bing-Hung Chen, Yih-Ann Lin
  • Patent number: 11115034
    Abstract: The present invention provides a signal detection circuit, wherein the signal detection circuit includes a sampling circuit and a determination circuit. In the operations of the signal detection circuit, the sampling circuit uses a plurality of clock signals to sample an input signal to generate a sampling result, wherein the plurality of clock signals have different phases, and frequencies of the plurality of clock signals are lower than a frequency of the input signal. The determination circuit refers to the sampling result to determine if the input signal comprises valid data, so as to determine if the input signal comes from outside a chip, wherein the chip includes the signal detection circuit.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: September 7, 2021
    Assignee: Realtek Semiconductor Corp.
    Inventor: Bing-Hung Chen
  • Publication number: 20210099179
    Abstract: The present invention provides a signal detection circuit, wherein the signal detection circuit includes a sampling circuit and a determination circuit. In the operations of the signal detection circuit, the sampling circuit uses a plurality of clock signals to sample an input signal to generate a sampling result, wherein the plurality of clock signals have different phases, and frequencies of the plurality of clock signals are lower than a frequency of the input signal. The determination circuit refers to the sampling result to determine if the input signal comprises valid data, so as to determine if the input signal comes from outside a chip, wherein the chip includes the signal detection circuit.
    Type: Application
    Filed: August 14, 2020
    Publication date: April 1, 2021
    Inventor: Bing-Hung Chen
  • Publication number: 20210083072
    Abstract: A method includes forming a gate dielectric layer, forming a metal gate strip over a bottom portion of the gate dielectric layer, and performing a first etching process on the metal gate strip to remove a portion of the metal gate strip. The first etching process is performed anisotropically. After the first etching process, a second etching process is performed on the metal gate strip to remove a residue portion of the metal gate strip. The second etching process includes an isotropic etching process. A dielectric material is filled into a recess left by the etched portion and the etched residue portion of the metal gate strip.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Chieh-Ning Feng, Chih-Chang Hung, Bing-Hung Chen, Yih-Ann Lin
  • Publication number: 20210005433
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 7, 2021
    Inventors: Ru-Chien CHIU, Bing-Hung CHEN, Keith Kuang-Kuo KOAI
  • Publication number: 20200335388
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Application
    Filed: July 6, 2020
    Publication date: October 22, 2020
    Inventors: Teng-Chun TSAI, Bing-Hung CHEN, Chien-Hsun WANG, Cheng-Tung LIN, Chih-Tang PENG, De-Fang CHEN, Huan-Just LIN, Li-Ting WANG, Yung-Cheng LU
  • Patent number: 10784087
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Chien Chiu, Bing-Hung Chen, Keith Kuang-Kuo Koai
  • Patent number: 10707114
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: July 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Teng-Chun Tsai, Bing-Hung Chen, Chien-Hsun Wang, Cheng-Tung Lin, Chih-Tang Peng, De-Fang Chen, Huan-Just Lin, Li-Ting Wang, Yung-Cheng Lu
  • Patent number: 10418271
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: September 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Teng-Chun Tsai, Li-Ting Wang, De-Fang Chen, Cheng-Tung Lin, Chih-Tang Peng, Chien-Hsun Wang, Bing-Hung Chen, Huan-Just Lin, Yung-Cheng Lu
  • Publication number: 20190267211
    Abstract: Embodiments described herein relate to plasma processes. A tool includes a pedestal. The pedestal is configured to support a semiconductor substrate. The tool includes a bias source. The bias source is electrically coupled to the pedestal. The bias source is operable to bias the pedestal with a direct current (DC) voltage. The tool includes a plasma generator. The plasma generator is operable to generate a plasma remote from the pedestal. A method for semiconductor processing includes performing a plasma process on a substrate in a tool. The plasma process includes flowing a gas into the tool. The plasma process includes biasing a pedestal that supports the substrate in the tool. The plasma process includes igniting a plasma in the tool using the gas.
    Type: Application
    Filed: November 1, 2018
    Publication date: August 29, 2019
    Inventors: Sheng-Liang Pan, Bing-Hung Chen, Chia-Yang Hung, Jyu-Horng Shieh, Shu-Huei Suen, Syun-Ming Jang, Jack Kuo-Ping Kuo
  • Publication number: 20190237304
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Application
    Filed: April 12, 2019
    Publication date: August 1, 2019
    Inventors: Ru-Chien CHIU, Bing-Hung CHEN, Keith Kuang-Kuo KOAI
  • Patent number: 10335445
    Abstract: The present invention relates to phorbol esters from the seeds of Aquilaria malaccensis by a series of chromatographic processes, and compositions containing these congeners for the treatment of allergic responses.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: July 2, 2019
    Assignee: WE-WIN APPLIED BIO-TECH CO., LTD.
    Inventors: Fang-Rong Chang, Bing-Hung Chen, Hsue-Yin Hsu, Yang-Chang Wu, Chen Hsieh, Hui-Ping Hsieh
  • Patent number: 10262839
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: April 16, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Chien Chiu, Bing-Hung Chen, Keith Kuang-Kuo Koai
  • Publication number: 20180350655
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Application
    Filed: July 30, 2018
    Publication date: December 6, 2018
    Inventors: Teng-Chun TSAI, Bing-Hung CHEN, Chien-Hsun WANG, Cheng-Tung LIN, Chih-Tang PENG, De-Fang CHEN, Huan-Just LIN, Li-Ting WANG, Yung-Cheng LU
  • Publication number: 20170358430
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Application
    Filed: June 14, 2016
    Publication date: December 14, 2017
    Inventors: Ru-Chien CHIU, Bing-Hung CHEN, Keith Kuang-Kuo KOAI
  • Patent number: 9805968
    Abstract: According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; performing chemical mechanical polishing on the oxide layer and stopping on the etch stop layer; etching back the oxide layer and the etch stop layer to expose a sidewall of the vertical structure and to form an isolation layer; oxidizing the sidewall of the vertical structure and doping oxygen into the isolation layer by using a cluster oxygen doping treatment.
    Type: Grant
    Filed: February 13, 2017
    Date of Patent: October 31, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Cheng-Tung Lin, Teng-Chun Tsai, Li-Ting Wang, De-Fang Chen, Bing-Hung Chen, Huang-Yi Huang, Hui-Cheng Chang, Huan-Just Lin, Ming-Hsing Tsai
  • Publication number: 20170266250
    Abstract: The present invention relates to phorbol esters from the seeds of Aquilaria malaccensis by a series of chromatographic processes, and compositions containing these congeners for the treatment or prevention of allergic responses. Furthermore, compositions are provided which comprise these phorbol esters in combination with at least one to assess the effects for preventing or treating allergies.
    Type: Application
    Filed: June 13, 2016
    Publication date: September 21, 2017
    Inventors: FANG-RONG CHANG, BING-HUNG CHEN, HSUE-YIN HSU, YANG-CHANG WU, CHEN HSIEH, HUI-PING HSIEH
  • Publication number: 20170154807
    Abstract: According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; performing chemical mechanical polishing on the oxide layer and stopping on the etch stop layer; etching back the oxide layer and the etch stop layer to expose a sidewall of the vertical structure and to form an isolation layer; oxidizing the sidewall of the vertical structure and doping oxygen into the isolation layer by using a cluster oxygen doping treatment.
    Type: Application
    Filed: February 13, 2017
    Publication date: June 1, 2017
    Inventors: Cheng-Tung Lin, Teng-Chun Tsai, Li-Ting Wang, De-Fang Chen, Bing-Hung Chen, Huang-Yi Huang, Hui-Cheng Chang, Huan-Just Lin, Ming-Hsing Tsai
  • Patent number: 9577093
    Abstract: According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; performing chemical mechanical polishing on the oxide layer and stopping on the etch stop layer; etching back the oxide layer and the etch stop layer to expose a sidewall of the vertical structure and to form an isolation layer; oxidizing the sidewall of the vertical structure and doping oxygen into the isolation layer by using a cluster oxygen doping treatment.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: February 21, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Cheng-Tung Lin, Teng-Chun Tsai, Li-Ting Wang, De-Fang Chen, Bing-Hung Chen, Huang-Yi Huang, Hui-Cheng Chang, Huan-Just Lin, Ming-Hsing Tsai