Abstract: The present invention is directed to a method for sorting biological objects including the steps of providing a magnetic device that includes a conduit or channel having upstream and downstream sections and a magnetic means for generating first and second magnetic fields in the upstream and downstream sections, respectively; flowing a sample fluid that includes magnetically labeled biological objects and unlabeled biological objects through the upstream section to magnetically saturate the magnetically labeled biological objects by the first magnetic field; and flowing the sample fluid from the upstream section continuously to the downstream section to collect the magnetically labeled biological objects on a wall of the downstream section by the second magnetic field, wherein the first magnetic field in the upstream section has a higher average field strength than the second magnetic field in the downstream section.

Abstract: A microfluidic device for sorting biological objects includes a microfluidic chip including a planar substrate having first and second planar surfaces, the planar substrate including first and second networks of channels recessed respectively from the first and second planar surfaces and fluidically connected by way of at least a through-hole in the planar substrate; a first lid attached to the first planar surface of the planar substrate and substantially covering the first network of channels; and a second lid attached to the second planar surface of the planar substrate and substantially covering the second network of channels; and one or more piezoelectric transducers attached to the first lid and/or the second lid and configured to generate first and second acoustic standing waves in a first linear channel of the first network of channels and a second linear channel of the second network of channels, respectively.

Abstract: The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes a plurality of metal-rich particles or clusters embedded in a matrix or at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element, which has a low resistance state and a high resistance state, and a two-terminal selector coupled to the MTJ memory element in series. The MTJ memory element includes a magnetic free layer and a magnetic reference layer with an insulating tunnel junction layer interposed therebetween. The two-terminal selector has an insulative state and a conductive state. The two-terminal selector in the conductive state has substantially lower resistance when switching the MTJ memory element from the low to high resistance state than from the high to low resistance state. The voltages applied to the memory cell to respectively switch the MTJ memory element from the low to high resistance state and from the high to low resistance state may be substantially same.

Abstract: The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.

Abstract: The present invention is directed to a magnetic structure, which includes a magnetic fixed layer structure formed on top of a seed layer structure. The seed layer structure includes one or more layers of a first transition metal, which may be platinum, palladium, nickel, or iridium, interleaved with one or more layers of a second transition metal, which may be tantalum, titanium, vanadium, molybdenum, chromium, tungsten, zirconium, hafnium, or niobium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first magnetic material interleaved with layers of the first transition metal. The first magnetic material may be made of cobalt.

Abstract: The present invention is directed to a method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a two-terminal selector.

Abstract: The present invention is directed to a method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a two-terminal selector. The method includes the steps of depositing a magnetic memory element film stack on a substrate; depositing a selector film stack on top of the magnetic memory element film stack; etching the selector film stack with an etch mask formed thereon to remove at least a switching layer in the selector film stack not covered by the etch mask, thereby forming a selector pillar; depositing a first conforming dielectric layer over the selector pillar and surrounding surface; etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the switching layer of the selector pillar; and etching the magnetic memory element film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar.

Abstract: The present invention is directed to a magnetic structure, which includes a magnetic fixed layer structure formed on top of a seed layer structure. The seed layer structure includes one or more layers of a first transition metal, which may be platinum, palladium, nickel, or iridium, interleaved with one or more layers of a second transition metal, which may be tantalum, titanium, vanadium, molybdenum, chromium, tungsten, zirconium, hafnium, or niobium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first magnetic material interleaved with layers of the first transition metal. The first magnetic material may be made of cobalt.

Abstract: The present invention is directed to a method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a two-terminal selector.

Abstract: The present invention is directed to a method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a two-terminal selector. The method includes the steps of depositing a magnetic memory element film stack on a substrate; depositing a selector film stack on top of the magnetic memory element film stack; etching the selector film stack with an etch mask formed thereon to remove at least a switching layer in the selector film stack not covered by the etch mask, thereby forming a selector pillar; depositing a first conforming dielectric layer over the selector pillar and surrounding surface; etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the switching layer of the selector pillar; and etching the magnetic memory element film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an oxide layer formed adjacent to the magnetic free layer structure; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the oxide layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element, which has a low resistance state and a high resistance state, and a two-terminal selector coupled to the MTJ memory element in series. The MTJ memory element includes a magnetic free layer and a magnetic reference layer with an insulating tunnel junction layer interposed therebetween. The two-terminal selector has an insulative state and a conductive state. The two-terminal selector in the conductive state has substantially lower resistance when switching the MTJ memory element from the low to high resistance state than from the high to low resistance state. The voltages applied to the memory cell to respectively switch the MTJ memory element from the low to high resistance state and from the high to low resistance state may be substantially same.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes a plurality of metal-rich particles or clusters embedded in a matrix or at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to an MTJ memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that includes a first seed layer and a second seed layer. The first seed layer includes one or more layers of nickel interleaved with one or more layers of a transition metal, which may be tantalum, titanium, or vanadium. The second seed layer is made of an alloy or compound comprising nickel and another transition metal, which may be chromium, tantalum, or titanium. The magnetic fixed layer structure has a first invariable magnetization direction substantially perpendicular to a layer plane thereof and includes layers of a first type material interleaved with layers of a second type material with at least one of the first and second type materials being magnetic. The first and second type materials may be cobalt and nickel, respectively.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof.

Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an oxide layer formed adjacent to the magnetic free layer structure; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the oxide layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.