Abstract: A display substrate and a manufacturing method therefor, and a display device. The display substrate comprises a display region (100), and a bonding region (200), which is located at a side of the display region, wherein the bonding region comprises a lead area (210), a first transition area (220), a bending area (230), a second transition area (240) and a bonding pin area (250), which are sequentially arranged in a direction away from the display region; on a plane perpendicular to the display substrate, the lead area and the bonding pin area comprise a composite insulating layer, which is arranged on a substrate body, and a metal line, which is arranged on the side of the composite insulating layer away from the substrate body; the first transition area and the second transition area comprise the composite insulating layer, an inorganic insulating layer (14) and a metal line (15).

Abstract: The embodiments of the present disclosure provide a display panel, a display device and a driving control method. The display panel includes: a shift register unit and output control signal lines coupled to the shift register unit, where the output control signal lines are disposed between the shift register unit coupled thereto and a display region of the display panel, and the shift register unit includes: a shift register, configured to output a cascade signal through a cascaded output terminal; an output circuit, coupled to the shift register, and configured to control a driving output terminal to output a gate scanning signal according to a signal of an output control signal terminal and a signal of a first reference signal terminal, where the output control signal terminal is coupled to one of the output control signal lines.

Abstract: Provided is a touch display pane, including a display substrate. The display substrate includes: a base substrate having a display region and a peripheral region, a plurality of pixel units, a plurality of dimming portions, a first barrier structure, and a first filling portion. An orthographic projection of each of the dimming portions on the base substrate is overlapped with an orthographic projection of a light-emitting region of a corresponding pixel units on the base substrate. Light from the light-emitting region is exited through the dimming portion. The first filling portion is disposed on a target side of the first barrier structure, which includes at least one of a side, close to the display region, of the first barrier structure or a side, away from the display region, of the first barrier structure. The first filling portion and the plurality of dimming portions are disposed in a same layer.

Abstract: The present disclosure provides a display substrate, a preparation method thereof, and a display apparatus. The display substrate includes a base substrate and a drive structure layer disposed on the base substrate, wherein the drive structure layer includes a first transistor and a second transistor arranged side by side, the first transistor includes a low temperature poly silicon transistor, and the second transistor includes an oxide transistor; the first transistor includes a first bottom gate electrode simultaneously served as a shielding layer, the second transistor includes a second bottom gate electrode simultaneously served as a shielding layer, and the first bottom gate electrode and the second bottom gate electrode are arranged in a same layer.

Abstract: A display panel and a display device are provided. In the display panel, a separation structure has a protrusion protruding from the organic insulating layer below the separation structure, or the separation structure itself has a protrusion, the separation structure is configured to disconnect the common layer at the protrusion; the separation structure is located between adjacent pixel electrodes and includes an inorganic material, the separation structure is located on at least part of the organic insulating layer, and the separation structure is spaced apart from the plurality of pixel electrodes by at least part of the organic insulating layer.

Abstract: A display substrate is provided, including: a base substrate, and a first semiconductor layer, a first conductive layer, a second semiconductor layer and a fourth conductive layer sequentially arranged on the base substrate. The display substrate includes first and third transistors. The first transistor includes a first active layer in the second semiconductor layer, and first bottom and top gate electrodes respectively on opposite sides of the first active layer. The third transistor includes a third active layer in the first semiconductor layer and a third gate electrode, the third active layer containing a polysilicon semiconductor material. The fourth conductive layer is on a side of the first top gate electrode away from the base substrate, and includes second and third conductive components. The first transistor is electrically connected to the third gate electrode of the third transistor through the second and third conductive components.

Abstract: A display substrate includes: a base substrate (101) and a drive circuit layer (102) disposed on the base substrate (101). The drive circuit layer (102) includes at least one pixel circuit, wherein the pixel circuit includes at least one oxide thin film transistor and a capacitor (C). The capacitor (C) includes a first capacitor plate (381) and a second capacitor plate (382). Orthographic projections of the first capacitor plate (381) and the second capacitor plate (382) on the base substrate (101) are overlapped, and an inorganic insulation layer is disposed between the first capacitor plate (381) and the second capacitor plate (382). In a direction perpendicular to the display substrate, a distance between the inorganic insulation layer and an active layer of the oxide thin film transistor is greater than or equal to 3000 angstroms.

Abstract: A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; and a first transistor on the base substrate. The first transistor includes a first active layer, a first bottom gate electrode between the base substrate and the first active layer, and a first top gate electrode on a side of the first active layer away from the base substrate. A third gate insulating layer is provided between the first bottom gate electrode and the first active layer. The first active layer contains an oxide semiconductor material, and the third gate insulating layer contains a silicon oxide material. A surface of the first bottom gate electrode away from the base substrate is in direct contact with the silicon oxide material, and a surface of the first active layer close to the base substrate is in direct contact with the silicon oxide material.

Abstract: A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; a first semiconductor layer on the base substrate; and a second semiconductor layer on a side of the first semiconductor layer away from the base substrate. The display substrate further includes a plurality of thin film transistors on the base substrate, which at least include a first transistor, a second transistor and a third transistor. Each of the plurality of thin film transistors includes an active layer. The active layer of at least one of the first transistor and the second transistor is located in the second semiconductor layer and contains an oxide semiconductor material. The active layer of the third transistor is located in the first semiconductor layer and contains a polysilicon semiconductor material. At least one of the first transistor and the second transistor has a dual-gate structure.

Abstract: The present disclosure provides a display substrate, a preparation method thereof, and a display apparatus. The display substrate includes a base substrate and a drive structure layer disposed on the base substrate, wherein the drive structure layer includes a first transistor and a second transistor arranged side by side, the first transistor includes a low temperature poly silicon transistor, and the second transistor includes an oxide transistor; the first transistor includes a first bottom gate electrode simultaneously served as a shielding layer, the second transistor includes a second bottom gate electrode simultaneously served as a shielding layer, and the first bottom gate electrode and the second bottom gate electrode are arranged in a same layer.

Abstract: Provided is a thin film transistor including a highly-textured dielectric layer, an active layer, a gate electrode and a source/drain electrode that are stacked on a base substrate. The source/drain electrode includes a source electrode and a drain electrode. The gate electrode and the active layer are insulated from each other. The source electrode and the drain electrode are electrically connected to the active layer. Constituent particles of the active layer are of monocrystalline silicon-like structures. According to the present disclosure, the highly-textured dielectric layer is adopted to replace an original buffer layer to induce the active layer to grow into a monocrystalline silicon-like structure, such that the performance of the thin film transistor is improved.

Abstract: Provided are a pixel driving circuit, a driving method thereof and a display panel. The pixel driving circuit includes a pixel driving module, an ultrasonic driving unit, an ultrasonic sensing unit and a signal acquisition unit. The pixel driving module is configured to drive a light-emitting unit to emit light; the ultrasonic driving unit is configured to provide a signal of a second signal terminal to a first node under control of the second signal terminal; the ultrasonic sensing unit is configured to transmit ultrasonic waves according to signals of the first node and a third power supply terminal, receive reflected ultrasonic echoes and generate a first induction signal at the first node; the signal acquisition unit is configured to output a second induction signal to an output terminal according to a first power supply terminal and first induction signal of the first node under control of the first node.

Abstract: A drive backplane and a display panel are provided, the drive backplane includes: a substrate; and an oxide thin film transistor arranged on the substrate, wherein the oxide thin film transistor includes: an oxide active layer; a first gate structure disposed on a side of the oxide active layer away from the substrate; and a second gate structure disposed between the oxide active layer and the substrate; wherein at least one of the first gate structure and the second gate structure comprises a plurality of gate electrodes spaced apart along a direction in which the oxide active layer extends.

Abstract: A peeping prevention structure, a display device and a display method are provided. The peeping prevention structure includes: a first electrode and a second electrode opposite to each other; a plurality of transparent columnar cavities between the first electrode and the second electrode, wherein a plurality of opening regions are defined between the plurality of transparent columnar cavities, and each of the plurality of transparent columnar cavities is filled with charged light-absorbing particles; wherein, the charged light-absorbing particles are configured to, under a control of an electric field between the first electrode and the second electrode, be uniformly diffused in the transparent columnar cavity or be concentrated at an end of the transparent columnar cavity.

Abstract: Disclosed are a flexible display panel, a flexible display device and a deformation detection method thereof, used for detecting deformation of the flexible display panel. The flexible display panel provided by embodiments of the present disclosure includes a flexible substrate, a display device and a piezoelectric sensor arranged in a stacked mode. The piezoelectric sensor includes a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode; the piezoelectric sensor is configured to generate an electrical signal under the action of stress produced by bending the flexible display panel; and a signal processing chip in the flexible display device is configured to determine deformation parameters of the flexible display panel according to the electrical signal.

Abstract: A display apparatus, display device and control method thereof, and non-transient computer-readable storage medium are provided. The display apparatus includes a display substrate and an ultrasonic transducer. The ultrasonic transducer includes a receiving electrode layer, which is disposed between two opposite bottom surfaces of the display substrate, and other parts of the ultrasonic transducer are disposed outside the display substrate. The display substrate includes a first pixel circuit and a first light emitting device, and the first light emitting device and the receiving electrode layer are respectively connected with the corresponding output terminals of the first pixel circuit.

Abstract: A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; a first semiconductor layer on the base substrate; and a second semiconductor layer on a side of the first semiconductor layer away from the base substrate. The display substrate further includes a plurality of thin film transistors on the base substrate, which at least include a first transistor, a second transistor and a third transistor. Each of the plurality of thin film transistors includes an active layer. The active layer of at least one of the first transistor and the second transistor is located in the second semiconductor layer and contains an oxide semiconductor material. The active layer of the third transistor is located in the first semiconductor layer and contains a polysilicon semiconductor material. At least one of the first transistor and the second transistor has a dual-gate structure.

Abstract: This disclosure provides a display device, an array substrate, a thin film transistor and a fabrication method thereof. The thin film transistor includes an active layer, a gate insulating layer, a gate electrode, a dielectric layer, a source electrode and a drain electrode. The active layer has a channel region, doped regions at both sides of the channel region, and buffer regions each of which arranged between the corresponding doped region and the channel region, and a doping concentration of the buffer regions is less than that of the doped regions. The gate insulating layer is at a side of the active layer, covers the channel region and the buffer regions, and exposes the doped regions. The gate electrode is on a surface of the gate insulating layer facing away from the active layer.

Abstract: A display substrate, a display panel, and a display device are provided. The display substrate includes: a base substrate; and a first transistor on the base substrate. The first transistor includes a first active layer, a first bottom gate electrode between the base substrate and the first active layer, and a first top gate electrode on a side of the first active layer away from the base substrate. A third gate insulating layer is provided between the first bottom gate electrode and the first active layer. The first active layer contains an oxide semiconductor material, and the third gate insulating layer contains a silicon oxide material. A surface of the first bottom gate electrode away from the base substrate is in direct contact with the silicon oxide material, and a surface of the first active layer close to the base substrate is in direct contact with the silicon oxide material.

Abstract: Provided are a pixel driving circuit, a driving method thereof and a display panel. The pixel driving circuit includes a pixel driving module, an ultrasonic driving unit, an ultrasonic sensing unit and a signal acquisition unit. The pixel driving module is configured to drive a light-emitting unit to emit light; the ultrasonic driving unit is configured to provide a signal of a second signal terminal to a first node under control of the second signal terminal; the ultrasonic sensing unit is configured to transmit ultrasonic waves according to signals of the first node and a third power supply terminal, receive reflected ultrasonic echoes and generate a first induction signal at the first node; the signal acquisition unit is configured to output a second induction signal to an output terminal according to a first power supply terminal and first induction signal of the first node under control of the first node.