Abstract: The present disclosure provides a driving circuit and a driving method thereof, an array substrate, a display device, and a driving method thereof. The driving circuit is applied for driving a light-emitting element and a fingerprint detection element, and includes: a driving sub-circuit, outputting a light-emitting driving current to the light-emitting element under the control of a driving node; a data writing sub-circuit, communicating a data input terminal with the driving node in response to a scanning signal of a scanning signal terminal; a first energy storage sub-circuit, coupled to the driving node and a control signal terminal; a detection sub-circuit, outputting a detection current under the control of an output terminal of the fingerprint detection element; and a data output sub-circuit, outputting a detection current to the data output terminal in response to the scanning signal of the scanning signal terminal.

Abstract: A display apparatus, display device and control method thereof, and non-transient computer-readable storage medium are provided. The display apparatus includes a display substrate and an ultrasonic transducer. The ultrasonic transducer includes a receiving electrode layer, which is disposed between two opposite bottom surfaces of the display substrate, and other parts of the ultrasonic transducer are disposed outside the display substrate. The display substrate includes a first pixel circuit and a first light emitting device, and the first light emitting device and the receiving electrode layer are respectively connected with the corresponding output terminals of the first pixel circuit.

Abstract: An array substrate includes a substrate, a dual-gate oxide thin film transistor TFT, an electrode for display and a polycrystalline silicon TFT. The dual-gate oxide thin film transistor TFT and the electrode for display are located in a sub-pixel on the substrate, and a drain electrode of the dual-gate oxide TFT is electrically connected to the electrode for display.

Abstract: The present application discloses a pixel circuit, a method for driving the same, and a display panel. The pixel circuit includes a pixel driving circuit and an ultrasonic line recognition circuit; the pixel driving circuit and the ultrasonic line recognition circuit are coupled to a same power supply terminal, a same first control signal terminal and a same scanning signal terminal; and the ultrasonic line recognition circuit is coupled to an ultrasonic device, and the pixel driving circuit is coupled to a data signal terminal and a light emitting device.

Abstract: A drive backplane and a display panel are provided, the drive backplane includes: a substrate; and an oxide thin film transistor arranged on the substrate, wherein the oxide thin film transistor includes: an oxide active layer; a first gate structure disposed on a side of the oxide active layer away from the substrate; and a second gate structure disposed between the oxide active layer and the substrate; wherein at least one of the first gate structure and the second gate structure comprises a plurality of gate electrodes spaced apart along a direction in which the oxide active layer extends.

Abstract: A thin film transistor includes: a bottom gate electrode; a bottom gate electrode insulating layer, a semiconducting active layer and a first insulating layer which are disposed on the bottom gate electrode in sequence; a source electrode and a drain electrode which are disposed at a side of the first insulating layer away from the bottom gate electrode; vias disposed in the first insulating layer at positions which correspond to the source electrode and the drain electrode respectively; and ohmic contact layers disposed on and covering the semiconducting active layer at positions corresponding to the vias respectively. Each of the source electrode and the drain electrode is in contact with a corresponding one of the ohmic contact layers through a corresponding one of the vias.

Abstract: The present application discloses a method of fabricating an array substrate. The method includes forming a first conductive material layer on a base substrate; forming an insulating layer on a side of the first conductive material layer distal to the base substrate, the insulating layer formed to cover a first part of the first conductive material layer, exposing a second part of the first conductive material layer; over-etching the first conductive material layer to remove the second part of the first conductive material layer, and remove a portion of a periphery of the first part of the first conductive material layer to form a recess between the insulating layer and the base substrate, thereby forming a first electrode; and subsequent to forming the first electrode and the recess, annealing the insulating layer to mobilize a portion of the insulating layer above the recess and fill the recess with a mobilized insulating material.

Abstract: The present disclosure provides a driving circuit and a driving method thereof, an array substrate, a display device, and a driving method thereof. The driving circuit is applied for driving a light-emitting element and a fingerprint detection element, and includes: a driving sub-circuit, outputting a light-emitting driving current to the light-emitting element under the control of a driving node; a data writing sub-circuit, communicating a data input terminal with the driving node in response to a scanning signal of a scanning signal terminal; a first energy storage sub-circuit, coupled to the driving node and a control signal terminal; a detection sub-circuit, outputting a detection current under the control of an output terminal of the fingerprint detection element; and a data output sub-circuit, outputting a detection current to the data output terminal in response to the scanning signal of the scanning signal terminal.

Abstract: The present application discloses an array substrate, a display apparatus and a method of fabricating an array substrate. The array substrate has a plurality of first bottom-gate type thin film transistors each of which including a metal oxide active layer and a plurality of second bottom-gate type thin film transistors each of which including a silicon active layer.

Abstract: Provided is a thin film transistor including a highly-textured dielectric layer, an active layer, a gate electrode and a source/drain electrode that are stacked on a base substrate. The source/drain electrode includes a source electrode and a drain electrode. The gate electrode and the active layer are insulated from each other. The source electrode and the drain electrode are electrically connected to the active layer. Constituent particles of the active layer are of monocrystalline silicon-like structures. According to the present disclosure, the highly-textured dielectric layer is adopted to replace an original buffer layer to induce the active layer to grow into a monocrystalline silicon-like structure, such that the performance of the thin film transistor is improved.

Abstract: The present application discloses a method of fabricating an array substrate. The method includes forming a first conductive material layer on a base substrate; forming an insulating layer on a side of the first conductive material layer distal to the base substrate, the insulating layer formed to cover a first part of the first conductive material layer, exposing a second part of the first conductive material layer; over-etching the first conductive material layer to remove the second part of the first conductive material layer, and remove a portion of a periphery of the first part of the first conductive material layer to form a recess between the insulating layer and the base substrate, thereby forming a first electrode; and subsequent to forming the first electrode and the recess, annealing the insulating layer to mobilize a portion of the insulating layer above the recess and fill the recess with a mobilized insulating material.

Abstract: An array substrate includes a substrate, a dual-gate oxide thin film transistor TFT, an electrode for display and a polycrystalline silicon TFT. The dual-gate oxide thin film transistor TFT and the electrode for display are located in a sub-pixel on the substrate, and a drain electrode of the dual-gate oxide TFT is electrically connected to the electrode for display.

Abstract: The present disclosure discloses a display device and a manufacturing method thereof. The display device includes a middle frame and an indiscrete flexible display panel bending around the middle frame. The flexible display panel includes a main display panel region on one side of the middle frame, an auxiliary display panel region on another side of the middle frame, and a bending region bending around the middle frame to connect the main display panel region with the auxiliary display panel region.

Abstract: A thin film transistor includes: a bottom gate electrode; a bottom gate electrode insulating layer, a semiconducting active layer and a first insulating layer which are disposed on the bottom gate electrode in sequence; a source electrode and a drain electrode which are disposed at a side of the first insulating layer away from the bottom gate electrode; vias disposed in the first insulating layer at positions which correspond to the source electrode and the drain electrode respectively; and ohmic contact layers disposed on and covering the semiconducting active layer at positions corresponding to the vias respectively. Each of the source electrode and the drain electrode is in contact with a corresponding one of the ohmic contact layers through a corresponding one of the vias.

Abstract: The present disclosure discloses a display device and a manufacturing method thereof. The display device includes a middle frame and an indiscrete flexible display panel bending around the middle frame. The flexible display panel includes a main display panel region on one side of the middle frame, an auxiliary display panel region on another side of the middle frame, and a bending region bending around the middle frame to connect the main display panel region with the auxiliary display panel region.

Abstract: This disclosure provides a liquid crystal display panel. The liquid crystal display panel comprises: a first substrate and a second substrate arranged oppositely, a plurality of main spacers located between the first substrate and the second substrate for supporting cell gap of the liquid crystal display panel, a plurality of auxiliary spacers located between the first substrate and the second substrate, and a plurality of pressure sensing electrodes in one-to-one correspondence with the plurality of auxiliary spacers; wherein a height of the auxiliary spacer is smaller than a height of the main spacer; a material of the auxiliary spacer is a piezoelectric material. This disclosure also discloses a manufacturing method of the liquid crystal display panel and a display device comprising the liquid crystal display panel.

Abstract: The present disclosure proposes a manufacturing method for a metal grating, a metal grating, and a display device. The manufacturing method comprises: forming a metal layer, an antireflective layer and a deep UV photoresist layer sequentially on a base substrate; etching the deep UV photoresist layer by a photolithography process, so as to form a grating mask pattern; etching the antireflective layer by a dry etching process with the help of the grating mask pattern, so as to form an etch mask pattern identical to the grating mask pattern; peeling off the grating mask pattern; etching the metal layer by a dry etching process with the help of the etch mask pattern, so as to form metal grating strips; and removing the etch mask pattern, thus forming a metal grating.

Abstract: A peeping prevention structure, a display device and a display method are provided. The peeping prevention structure includes: a first electrode and a second electrode opposite to each other; a plurality of transparent columnar cavities between the first electrode and the second electrode, wherein a plurality of opening regions are defined between the plurality of transparent columnar cavities, and each of the plurality of transparent columnar cavities is filled with charged light-absorbing particles; wherein, the charged light-absorbing particles are configured to, under a control of an electric field between the first electrode and the second electrode, be uniformly diffused in the transparent columnar cavity or be concentrated at an end of the transparent columnar cavity.

Abstract: An array substrate and a manufacturing method thereof, and display panel are disclosed. The array substrate includes a substrate, a thin film transistor disposed on the substrate and a common electrode disposed on a side of the thin film transistor away from the substrate. The common electrode includes a first hollowed-out portion. An active layer of the thin film transistor includes a source electrode region, a drain electrode region and a channel region. An orthographic projection of the first hollowed-out portion on the substrate at least covers an orthographic projection of the channel region on the substrate.

Abstract: The present disclosure provides a pixel unit, a display panel, and a display device, which relates to the field of display technology. The pixel unit includes: a base substrate; a reflective layer, disposed on a side of the base substrate; a resonant layer, disposed on a side of the reflective layer away from the base substrate; a transflective layer, disposed on a side of the resonant layer away from the base substrate; and a scattering layer, disposed on a side of the transflective layer away from the base substrate.