Abstract: An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.

Abstract: A synthesis process for polyhedral oligomeric silsesquioxanes that produces in high yield a low resin content, solvent free, and trace metal free monomer suitable for use in microelectronic applications. POSS silanols are reacted with a silane coupling agent in the presence of a solvent and a superbase.

Abstract: An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.

Abstract: An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.

Abstract: Thermally curable undercoat composition comprising for producing a bilayer relief image comprising: a) a polymer of Structure I comprising repeating units of Structure II, III, and IV b) a phenolic crosslinker; c) a thermal acid generator (TAG); and d) a solvent.

Abstract: A photosensitve composition exhibiting high resolution and enhanced, tunable O2 plasma etch resistance comprising a silicon-containing base polymer, a silicon-containing additive, a photoacid generator and solvent is provided. A method of forming a patterned resist film is also provided.

Abstract: Polymers and co-polymers having monomeric units formed by the polymerization of monomers of the Structure I where R1 is a moiety containing an ethylenically unsaturated polymerizable group, R2 is a C1-C3 alkylene group, and R3 is a C1-10 linear or cyclic alkyl group, a C6-10 aromatic or substituted aromatic group, a C1-8 alkoxy methyl, or a C1-8 alkoxy ethyl group, are useful as binder resins for photosensitive compositions, and processes for photolithography in the production of semiconductor devices and materials.

Abstract: Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: wherein R1 is H or methyl; R2 is a substituted or unsubstituted C6-C14 aryl acrylate or C6-C14 aryl methacrylate group wherein the substituted groups may be phenyl, C1-4 alkyl or C1-4 alkoxy; R3 is a hydroxyl functionalized C1-C8 alkyl acrylate, methacrylate or C6-C14 aryl group, R4 is a C1-C10 linear or branched alkylene; p is an integer of from 1 to 5 with the proviso that there are no more than thirty carbon atoms in the [—R4O—]p; R5 is a C1-C10 linear, branched or cyclic alkyl, substituted or unsubstituted C6-C14 aryl, or substituted or unsubstituted C7-C15 alicyclic hydrocarbon; and m is about 40 to 70, n is about 15 to 35 and o is about 15 to 25.

Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep U V. particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.

Abstract: A polymer comprises an acetal-containing monomer unit having the general structure I and at least one of the fluorine-containing monomer units having the general structures II and III: wherein R1, R4, R5 and R6 are each independently H, lower alkyl, CH2CO2R10, cyano, CH2CN, or halogen, wherein R10 is any alkyl, cycloalkyl, aryl, arylalkyl, alkylenecycloalkyl, silyl or siloxy or linear or cyclic polysiloxane group; R2 is CHR11R12 where R11 and R12 are each independently H, lower alkyl, cycloalkyl or aryl; A is a substituted or unsubstituted alkylene, cycloalkylene, alkylenecycloalkylene, or alkylenearylene; and R3 is linear, branched or cyclic fluoroalkyl group or SiR13R14R15 where R13, R14, and R15 are each independently alkyl, cycloalkyl, aryl, arylalkyl, alkylenecycloalkyl, silyl, siloxy, linear or cyclic polysiloxane or silsesquioxane alkyl group; B is an aryl, C(═O)—O—(CH2)x where x=0-4, lower alkyl, cycloalkyl, alkene cycloalkyl, silyl, siloxyl, or linear or cycl

Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep UV, particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.

Abstract: A polymer comprises an acetal-containing monomer unit having the general structure I and at least one of the fluorine-containing monomer units having the general structures II and III: 1

Abstract: Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: 1

Abstract: Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: wherein R1 is H or methyl; R2 is a substituted or unsubstituted C6-C14 aryl acrylate or C6-C14 aryl methacrylate group wherein the substituted groups may be phenyl, C1-4 alkyl or C1-4 alkoxy; R3 is a hydroxyl functionalized C1-C8 alkyl acrylate, methacrylate or C6-C14 aryl group, R4 is a C1-C10 linear or branched alkylene; p is an integer of from 1 to 5 with the proviso that there are no more than thirty carbon atoms in the [—R4O—]p; R5 is a C1-C10 linear, branched or cyclic alkyl, substituted or unsubstituted C6-C14 aryl, or substituted or unsubstituted C7-C15 alicyclic hydrocarbon; and m is about 40 to 70, n is about 15 to 35 and o is about 15 to 25.

Abstract: Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: 1