Abstract: Techniques are disclosed for an electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS). A cylindrical magnet is placed around the neck of a hollow cathode under the influence of an RF field. A plasma gas is introduced in the hollow cathode that undergoes phase transition to a plasma containing free electrons and gas ions. The magnetic field of the magnet causes ECR that confines free electrons to a narrow spiraling beam traveling down the body of the hollow cathode. Unlike traditional methods, the present ECR-enhanced design confines the electrons and ions to a narrow path away from the walls of the cathode. The high-density, stable plasma is available at the distal end of the hollow cathode. A multicavity design utilizes multiple cavities with multiple aligned magnets in a single reactor suitable for various processes including, PECVD, PEALD, ALE, etc.

Abstract: Techniques are disclosed for roll-to-roll (R2R) atomic layer deposition (ALD). R2R ALD is accomplished by arranging precursor nozzles in A/B pairs while a flexible web substrate moves underneath the A/B pairs at a uniform speed. Nozzles A of the A/B pairs continuously flow a precursor A into the process volume of the R2R ALD chamber. The plasma enhanced/activated ALD (PEALD/PAALD) embodiments utilize electron cyclotron rotation (ECR)-enhanced hollow cathode plasma sources (HCPS) where nozzles B flow activated neutrals of precursor B into the process volume. As the flexible web moves in an R2R motion, nucleates from precursor A deposited on the surface of the substrate, and neutrals of precursor B undergo a self-limiting reaction to deposit a single atomically sized ALD film/layer. In this manner, multiple ALD layers may be deposited by each successive A/B pair in a single pass of the web.

Abstract: Techniques are disclosed for roll-to-roll (R2R) atomic layer deposition (ALD). R2R ALD is accomplished by arranging precursor nozzles in A/B pairs while a flexible web substrate moves underneath the A/B pairs at a uniform speed. Nozzles A of the A/B pairs continuously flow a precursor A into the process volume of the R2R ALD chamber. The plasma enhanced/activated ALD (PEALD/PAALD) embodiments utilize electron cyclotron rotation (ECR)-enhanced hollow cathode plasma sources (HCPS) where nozzles B flow activated neutrals of precursor B into the process volume. As the flexible web moves in an R2R motion, nucleates from precursor A deposited on the surface of the substrate, and neutrals of precursor B undergo a self-limiting reaction to deposit a single atomically sized ALD film/layer. In this manner, multiple ALD layers may be deposited by each successive A/B pair in a single pass of the web.

Abstract: Techniques are disclosed for protecting a lithographic mask and its lithographic pattern during the lifecycle of the mask. This is accomplished by deposited an extremely uniform and geometrically conformal protective coating on the mask that provides it mechanical and electrostatic protection. The coating envelopes or surrounds the pattern on the mask thereby providing it protection during the various operations in the lifecycle of the mask, including cleanings, repairs, inspections, etc. The conformal coating is deposited using atomic layer deposition (ALD) which is preferably a plasma-enhanced ALD (PEALD) or preferably still a continuous-flow PEALD. The instant conformal coating protects various types of lithographic masks including projection or contact photomasks or extreme ultra-violet (EUV) masks. While improving the yield, the conformal coating, that may eventually be sacrificial, protects the underlying mask and its lithographic pattern from mechanical or other forms of damage.

Abstract: Techniques are disclosed for an electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS). A cylindrical magnet is placed around the neck of a hollow cathode under the influence of an RF field. A plasma gas is introduced in the hollow cathode that undergoes phase transition to a plasma containing free electrons and gas ions. The magnetic field of the magnet causes ECR that confines free electrons to a narrow spiraling beam traveling down the body of the hollow cathode. Unlike traditional methods, the present ECR-enhanced design confines the electrons and ions to a narrow path away from the walls of the cathode. The high-density, stable plasma is available at the distal end of the hollow cathode. A multicavity design utilizes multiple cavities with multiple aligned magnets in a single reactor suitable for various processes including, PECVD, PEALD, ALE, etc.

Abstract: Techniques are disclosed for methods and apparatus for performing plasma enhanced atomic layer deposition (PEALD) as well as plasma enhanced chemical vapor deposition (PECVD) in a single hybrid design and without requiring any mechanical intervention. Depending on the configuration/activation of an electrically controlled RF switch, in the PEALD mode, plasma is created by an ICP source above a grounded metal plate in the chamber. Alternatively, in the PECVD mode, the metal plate itself is RF-powered and produces the plasma around the substrate and below an underlying ceramic plate. Electrical isolation of the metal plate is preferably provided by a ceramic ring spacer. A stack of PEALD/PECVD films may thus be obtained by the present hybrid design in a single recipe. In certain aspects, an RF-bias is provided to the heated platen holding the substrate for better stress management of the PECVD layers.

Abstract: Techniques are disclosed for methods and apparatus for performing plasma enhanced atomic layer deposition (PEALD) as well as plasma enhanced chemical vapor deposition (PECVD) in a single hybrid design and without requiring any mechanical intervention. Depending on the configuration/activation of an electrically controlled RF switch, in the PEALD mode, plasma is created by an ICP source above a grounded metal plate in the chamber. Alternatively, in the PECVD mode, the metal plate itself is RF-powered and produces the plasma around the substrate and below an underlying ceramic plate. Electrical isolation of the metal plate is preferably provided by a ceramic ring spacer. A stack of PEALD/PECVD films may thus be obtained by the present hybrid design in a single recipe. In certain aspects, an RF-bias is provided to the heated platen holding the substrate for better stress management of the PECVD layers.

Abstract: Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer/substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.

Abstract: Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer/substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.

Abstract: Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer/substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.

Abstract: Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer/substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.

Abstract: Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer/substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.

Abstract: The present invention is directed to a method, system, and apparatus for applying megasonic energy to the surface of a workpiece for the removal of contaminants. A nozzle dispenses a stream of deionized water or other cleaning fluid at a radial position on the surface. A stepping motor moves the arm over the surface, in a step-wise manner, allowing megasonic energy to be applied in a uniform manner. The workpiece is rotated at low speeds to provide a more uniform application. Chemical solutions may optionally be added to dissolve contaminants or change the Zeta potential of the contaminants to make particles easier to detach and suspend. A high-RPM dry spin cycle further removes cleaning fluid and suspended contaminants, preventing them from reattaching. The present invention is compatible with numerous types of workpieces including 12″ semiconductor wafers.

Abstract: The present invention is directed to a method, system, and apparatus for applying megasonic energy to the surface of a workpiece for the removal of contaminants. A nozzle dispenses a stream of deionized water or other cleaning fluid at a radial position on the surface. A stepping motor moves the arm over the surface, in a step-wise manner, allowing megasonic energy to be applied in a uniform manner. The workpiece is rotated at low speeds to provide a more uniform application. Chemical solutions may optionally be added to dissolve contaminants or change the Zeta potential of the contaminants to make particles easier to detach and suspend. A high-RPM dry spin cycle further removes cleaning fluid and suspended contaminants, preventing them from reattaching. The present invention is compatible with numerous types of workpieces including 12″ semiconductor wafers.

Abstract: Automatic determination of the lateral offset between a pair of overlapping vernier patterns (20 and 22) on overlying layers (14 and 15) of a semiconductor wafer (10) is achieved by first capturing the image of the vernier patterns using a television camera (26). The output signal of the television camera is processed by an image acquisition circuit (32) coupled to a computer (34) to determine the intensity of each of a plurality of pixels lying within a strip extending across the image of the vernier patterns. The intensity of each of the pixels is mathematically correlated by the computer (34) with each of a plurality of values corresponding to the intensity of each of a plurality of pixels comprising an image representative of a pair of aligned vernier patterns. The location within the captured image of the maximum of the correlated intensities is then found.

Abstract: A plasma source (34, 150) for producing a pulse of soft x-rays includes a tubular cathode electrode (76) concentric within, and surrounded by a generally cylindrical anode electrode (44). A fast-acting gas valve (101, 152) discharges a plurality of inclined gas streams between the anode electrode (44) and cathode electrode (76) to form a gas shell (122, 176). Just after the shell is formed, a large, time varying voltage is transmitted to the anode and cathode electrodes to produce an intense electric field therebetween which ionizes the shell, transforming it into a sheath of plasma which collapses. The collapse of the plasma sheath yields a hot dense volume of plasma which radiates a burst of soft x-rays useful for lithographic purposes.

Abstract: A high speed gas valve (10) comprises an annular base member (14) having a plurality of plenums (18--18) into which a gas is admitted through a passage (42) in an overlying coverplate (16). Within each plenum is a conductive disc (26) which seals an orifice (20) leading from the respective plenum into an annular channel (39) in the top surface of a plate (34) in intimate contact with the bottom of the base member. The channel (39) connects each of a plurality of inclined nozzles (36--36) in the plate to each of the plenums (18--18). Underneath each disc (26) is a portion of an electrode (22). When a time varying voltage is applied to the electrode, a time varying current passes therein causing an eddy current to be induced in each of the discs (26--26) which lifts them simultaneously out of sealing engagement with the respective orifices (20--20). As a result, gas is discharged from the nozzles (36--36) as inclined gas streams (46--46) which form a shell (48).

Abstract: A photomask (50) used for form patterns on a resist coated semiconductor wafer is comprised of a light transmissive baseplate (52) having a metallic pattern (54) thereon. A plasma deposited SiO.sub.2 conformal, electrically resistive, coating (56) covers the patterned baseplate (52), wherein the coating material is substantially the same refractive index as the baseplate.

Abstract: A photomask (60) used to form patterns on a resist coated semiconductor wafer is comprised of a light transmissive baseplate (62) having a thin metallic pattern (63) thereon; a plasma deposited coating (66) covering the patterned baseplate (62); a light transmissive, planar coverplate (68) in intimate contact with the coating (66) with an index matching fluid (72) interposed therebetween.

Abstract: A method for detecting the end point of the plasma etching of a pattern (36) in an aluminum layer (33) on a silicon wafer (16). The pattern (36) and portions of a Fresnel zone plate (30) are simultaneously etched in the aluminum layer (33). The intensity of the light reflected from the Fresnel zone plate (30) during plasma etching is monitored and the etching process terminated when the intensity falls below a predetermined level.