Abstract: A PCB includes a number of insulation layers, a number of circuit layers, a signal-interfering component, and a signal-sensitive component. The circuit layers and the insulation layers are stacked alternately. The circuit layers include at least two first circuit layers, a second circuit layer, and a ground layer. The ground layer has a first side and a second side facing away the first side. The first circuit layers are positioned near the first side and include an outmost first circuit layer and at least one inner first circuit layer positioned between the outmost first circuit layer and the ground layer. The second circuit layer is positioned near the second side. The signal-interfering component is positioned on the outmost first circuit layer. The signal-sensitive component is positioned on the second circuit layer. Each inner first circuit layer defines a copper-remove area corresponding to an orthogonal projection of the signal-interfering component thereon.

Abstract: An NMOS transistor is formed with improved manufacturability. An embodiment includes forming N-type doped embedded silicon germanium containing carbon (eSiGe:C) in source/drain regions of a substrate, and amorphizing the eSiGe:C. The use of eSiGe:C provides a reduction in extension silicon and dopant loss, improved morphology, increased wafer throughput, improved short channel control, and reduced silicide to source/drain contact resistance.

Abstract: A connector includes a housing and a base. The housing has a receiving hole for receiving a first-type plug. The base is assembled with the housing and has at least one foolproof structure. The foolproof structure and the base are formed as a single piece. The foolproof structure is protruded inside the receiving hole for blocking an insertion of an incompatible plug.

Abstract: A connector includes a housing and a base. The housing has a receiving hole for receiving a first-type plug. The base is assembled with the housing and has at least one foolproof structure. The foolproof structure and the base are formed as a single piece. The foolproof structure is protruded inside the receiving hole for blocking an insertion of an incompatible plug.

Abstract: A connector assembly is provided. The connector assembly includes a housing having at least a socket, an electronic device disposed in the housing, a protection member disposed on a side of the housing, a light emitting element disposed on the protection member, a light pipe disposed on the housing for guiding light from the light emitting element, a shield surrounding the protection member and the light emitting element, and a cover encompassing the light pipe, the shield, and the light emitting element.

Abstract: A connector assembly is provided. The connector assembly includes a housing having at least a socket, an electronic device disposed in the housing, a protection member disposed on a side of the housing, a light emitting element disposed on the protection member, a light pipe disposed on the housing for guiding light from the light emitting element, a shield surrounding the protection member and the light emitting element, and a cover encompassing the light pipe, the shield, and the light emitting element.

Abstract: The present invention relates to plasma cleaning methods for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The present invention also provides gas mixtures and activated gas mixtures which provide superior performance in removing deposits from a surface. The methods involve activating a gas mixture comprising a carbon or sulfur source, NF3, and optionally, an oxygen source to form an activated gas, and contacting the activated gas mixture with surface deposits to remove the surface deposits wherein the activated gas mixture acts to passivate the interior surfaces of the apparatus to reduce the rate of surface recombination of gas phase species.

Abstract: Disclosed is a deposition apparatus assembly comprising a deposition chamber, a remote chamber outside the deposition chamber for producing a reactive species from a precursor gas mixture, an activation source adapted to deliver energy into said remote chamber, a conduit for flowing the reactive species from said remote chamber to said deposition chamber and a flow restricting device interposed between said conduit and said remote chamber wherein said flow restricting device is cooled by an external source.

Abstract: The present invention relates to a remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The process involves activating a gas stream comprising an oxygen source, NF3, and a fluorocarbon and contacting the activated gas mixture with surface deposits to remove the surface deposits.

Abstract: The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a process chamber that is used in fabricating electronic devices. The improvement involves using an activated gas with high neutral temperature of at least about 3000 K, and addition of an oxygen source to the NF3 cleaning gas mixture to improve the etching rate.

Abstract: The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a process chamber that is used in fabricating electronic devices. The improvement involves addition of a nitrogen source to the feeding gas mixture comprising an oxygen source and sulfur fluoride.

Abstract: The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves addition of a nitrogen source to the feeding gas mixture comprising of oxygen and fluorocarbon. The improvement also involves pretreatment of interior surface of the pathway from the remote chamber to the surface deposits by activating a pretreatment gas mixture comprising of nitrogen source and passing the activated pretreatment gas through the pathway.

Abstract: The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves a fluorocarbon rich plasma pretreatment of interior surface of the pathway from the remote chamber to the surface deposits.

Abstract: The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves using an activated gas with high neutral temperature of at least about 3,000 K. The improvement also involves optimizing oxygen to fluorocarbon ratios for better etching rates and emission gas control.