Patents by Inventor Bo Cheng

Bo Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240097010
    Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 21, 2024
    Inventors: Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20240083934
    Abstract: Provided herein are N-acetylgalactosamine (GalNAc)-derived compounds, modified oligonucleotides, and methods of modulating protein function and treating diseases, disorders, and symptoms in a subject.
    Type: Application
    Filed: October 8, 2021
    Publication date: March 14, 2024
    Applicant: ADARx Pharmaceuticals, Inc.
    Inventors: Zhen Li, Rui Zhu, Mehdi Michel Djamel Numa, Bo Cheng, Chase Robert Olsson, Chandramouli Chiruta, Indrasena Reddy Kummetha
  • Publication number: 20240088155
    Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Yu LAI, Kai-Hsuan LEE, Wei-Yang LEE, Feng-Cheng YANG, Yen-Ming CHEN
  • Patent number: 11923536
    Abstract: The present application relates to a composite material with a core-shell structure for battery, wherein the core is made of a core material including metallic copper or a copper-containing compound; the shell is made of a shell material including at least one of silicon dioxide and titanium dioxide; and the core material has an average particle size D50 of 0.01 ?m-5 ?m, optionally 0.1 ?m-3 ?m, and more optionally 0.1 ?m-2 ?m. The present application also relates to secondary battery containing the composite material, a battery module, a battery pack, and an apparatus.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: March 5, 2024
    Assignee: Contemporary Amperex Technology Co., Limited
    Inventors: Bo Cheng, Changlong Han
  • Patent number: 11903256
    Abstract: A display substrate and a display device are provided. The display substrate includes a base substrate and a plurality of sub-pixels on the base substrate. Each sub-pixel includes a pixel circuit; pixel circuits are in columns in a first direction and rows in a second direction. The sub-pixels includes a first sub-pixel, and the display substrate further includes a first data line extended in the first direction and connected with the first sub-pixel. The sub-pixels further includes a second sub-pixel directly adjacent to the first sub-pixel in the second direction. A first capacitor electrode in the first sub-pixel and a first capacitor electrode in the second sub-pixel are in a same layer and are spaced apart from each other; and the first capacitor electrode in the first sub-pixel is overlapped with the first data line in a direction perpendicular to the base substrate to provide a first capacitor.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: February 13, 2024
    Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Shuangbin Yang, Bo Cheng, Yulong Wei, Xiangdan Dong
  • Patent number: 11897049
    Abstract: The invention provides a retractable friction stir welding spindle, aims at the deficiencies and defects of the existing friction stir welding spindle technology, that is, when the welding is finished, the stirring needle leaves a keyhole at the end of the weld seam, which affects the forming performance of the workpiece, the overall structure design of the spindle is complicated with many transmission chains and low reliability which is difficult to realize modularization. The retractable friction stir welding spindle includes an electric spindle system and a retracting mechanism. The electric spindle system includes stirring shaft shoulder, hilt, front end cover, hollow spindle, motorized spindle shell, motor rotor, motor stator, tail end cover, etc. The retracting mechanism includes stirring needle, connecting ball head and electric cylinder. The invention has the advantages of simple structure and can be mainly divided into two modules to improve reliability and integrity.
    Type: Grant
    Filed: April 10, 2023
    Date of Patent: February 13, 2024
    Assignee: BEIJING UNIVERSITY OF TECHNOLOGY
    Inventors: Shujun Chen, Bo Cheng, Xinhong Xie, Zirui Cao
  • Publication number: 20240017349
    Abstract: A method for controlling surface asperity during laser sealing of a membrane vent hole. The method includes applying a laser pulse having a laser intensity spatial distribution to the membrane vent hole to form a seal over the membrane vent hole. The seal has a seal surface. The laser pulse includes a primary laser pulse region and a secondary laser pulse region beginning once the primary laser pulse region ends. The primary laser pulse region has a primary laser power, and the secondary laser pulse region has a secondary laser power. The secondary laser power is less than the primary laser power. The seal surface has a controlled surface asperity characteristic.
    Type: Application
    Filed: July 13, 2022
    Publication date: January 18, 2024
    Inventors: Bo CHENG, Holger RUMPF, Jens FREY, Charles TUFFILE
  • Publication number: 20240019457
    Abstract: An inertial measurement device for controlling surface asperity during laser sealing. The device includes a membrane having an upper surface and defining a vent hole extending downward from the upper surface. The vent hole has a first height and a first perimeter along the first height. The vent hole has a second height and a second perimeter extending along the second height. The first height is disposed above the second height. The first perimeter is greater than the second perimeter to form a shoulder portion therebetween. The shoulder portion, the first perimeter, and the first height collectively create a volume configured to control surface asperity during laser sealing of the vent hole.
    Type: Application
    Filed: July 13, 2022
    Publication date: January 18, 2024
    Inventors: Bo CHENG, Holger RUMPF, Jens FREY, Charles TUFFILE
  • Publication number: 20240017353
    Abstract: A method for controlling surface asperity during laser sealing of a membrane vent hole. The method includes applying a laser having a laser intensity spatial distribution to the membrane vent hole to form a seal over the membrane vent hole. The seal has a seal surface. The laser pulse includes a primary laser pulse region and a secondary pulse region later in time than the primary laser pulse region, and a time gap between the primary laser pulse region and the secondary laser pulse region. The primary laser pulse region and/or the secondary pulse region include first and second discontinuous laser pulses having a first time gap therebetween and/or third and fourth discontinuous laser pulses having a second time gap therebetween. The seal surface has a controlled surface asperity characteristic.
    Type: Application
    Filed: July 13, 2022
    Publication date: January 18, 2024
    Inventors: Bo CHENG, Holger RUMPF, Jens FREY, Charles TUFFILE
  • Patent number: 11869314
    Abstract: The present disclosure relates generally to gaming devices, systems, and methods. An illustrative method includes establishing a gaming session between a player and a gaming device, determining that a predetermined condition has been met during the gaming session, and automatically displaying a prompt to the player via a user interface of the gaming device, where the prompt provides an indication that an automated transfer event will occur a predetermined amount of time after displaying the prompt with respect to a credit meter being used to conduct the gaming session at the gaming device and where the prompt is displayed in response to determining that the predetermined condition has been met during the gaming session.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: January 9, 2024
    Assignee: IGT
    Inventors: Fang He, Kun Wang, Bo Cheng
  • Patent number: 11856424
    Abstract: A method for creating a network simulation platform that has a first black box model, includes: obtaining a candidate network performance indicator and feature information related to the candidate network performance indicator, where the feature information related to the candidate network performance indicator refers to a part or all of feature information needed to obtain the candidate network performance indicator; and training a machine learning model to obtain the first black box model, where an output parameter of the first black box model is the candidate network performance indicator, input parameters of the first black box model are the feature information related to the candidate network performance indicator, and the first black box model is used to simulate the candidate network performance indicator. The solutions provided help reduce simulation complexity and are applicable to large-scale network simulation.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: December 26, 2023
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Guojun Ye, Bo Cheng, Xi Li
  • Patent number: 11853519
    Abstract: Provided are a touch substrate and a touch display substrate. The touch substrate includes: a touch structure, including a sensor pattern and a touch line, the sensor pattern including a plurality of first sensor patterns and a plurality of second sensor patterns, and the touch line includes a plurality of first touch lines and a plurality of second touch lines, each first sensor pattern is connected with at least one of the first touch lines, and each second sensor pattern is connected with at least one of the second touch lines; a first ground line located at a periphery of the touch structure; and at least one second ground line located at a side of the first ground line, wherein the first ground line and the at least one second ground line are connected at a side of the touch structure and are connected with one ground connection line.
    Type: Grant
    Filed: October 28, 2021
    Date of Patent: December 26, 2023
    Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Jun Yan, Xiangdan Dong, Fan He, Lingran Wang, Bo Cheng, Mengmeng Du, Bo Zhang
  • Publication number: 20230400952
    Abstract: A touch substrate and a touch display device are provided. The touch substrate includes a touch region and a notch region, a first notch touch electrode extending to the notch region, the touch substrate further includes a touch-driving connection line connected to the first notch touch electrode, the plurality of second touch electrodes includes at least one second disconnection touch electrode, each of the at least one second disconnection touch electrode includes a first sub portion and a second sub portion, the touch substrate further includes a bridge line and a shielding line, the bridge line connects the first sub portion and the second sub portion, an orthographic projection of at least a part of the shielding line on the base substrate is between an orthographic projection of the bridge line on the base substrate and an orthographic projection of the touch-driving connection line on the base substrate.
    Type: Application
    Filed: August 25, 2023
    Publication date: December 14, 2023
    Applicants: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO.,LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Jun YAN, Xiangdan DONG, Lingran WANG, Bo CHENG, Fan HE, Mengmeng DU
  • Patent number: D1007089
    Type: Grant
    Filed: August 14, 2023
    Date of Patent: December 5, 2023
    Assignee: ZHEJIANG CHENG'S PLASTIC PRODUCTS CO., LTD.
    Inventor: Bo Cheng
  • Patent number: D1011790
    Type: Grant
    Filed: April 26, 2023
    Date of Patent: January 23, 2024
    Assignee: Yiwu Chongqi Crafts Co., Ltd.
    Inventor: Bo Cheng
  • Patent number: D1012481
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: January 30, 2024
    Assignee: UnitedHealth Group Incorporated
    Inventors: Jennie Audrey Ehlert, Andrew Tsong-Bo Cheng, Emre Charles Adabag, Samantha Roberta Detor
  • Box
    Patent number: D1012498
    Type: Grant
    Filed: September 27, 2023
    Date of Patent: January 30, 2024
    Assignee: ZHEJIANG CHENGSHI PLASTIC PRODUCTS CO., LTD.
    Inventor: Bo Cheng
  • Patent number: D1016506
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: March 5, 2024
    Assignee: SHENZHEN BESTQI INNOVATION TECHNOLOGY CO., LTD
    Inventor: Bo Cheng
  • Patent number: D1018454
    Type: Grant
    Filed: December 24, 2021
    Date of Patent: March 19, 2024
    Inventor: Bo Cheng
  • Patent number: D1018502
    Type: Grant
    Filed: December 24, 2021
    Date of Patent: March 19, 2024
    Inventor: Bo Cheng