Abstract: A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si—O—Si bonding group and at least one bridging organic functional group.

Abstract: An integrated circuit device has a dual damascene structure including a lower via portion and an upper line portion. The lower via portion is formed in a polyimide layer, and the upper line portion is formed in an inter-metal dielectric (IMD) layer formed of USG or polyimide. A passivation layer is formed on the IMD layer, and a bond pad is formed overlying the passivation layer to electrically connect the upper line portion.

Abstract: Embodiments of semiconductor devices are provided. In one embodiment, the semiconductor device includes a substrate, an etch stop layer formed on the substrate, an adhesion promotion layer formed directly on the etch stop layer, and a dielectric layer formed directly on the adhesion promotion layer. The etch stop layer may include silicon, carbon, and nitrogen. The dielectric layer may include silicon, oxygen, and carbon. The adhesion promotion layer may include carbon, oxygen, and nitrogen. An example of an adhesion promotion layer includes polyimide.

Abstract: A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si—O—Si bonding group and at least one bridging organic functional group.