Patents by Inventor Bo Lei

Bo Lei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180143293
    Abstract: The present invention relates to a forward acoustic scattering based double-transmitter and double-receiver networking target detection system and method thereof. Two transmitting ends and two receiving ends are adopted, anchored at a sea bottom, and arranged in a parallelogram layout. Time of a target crossing transmitting-receiving connection lines is extracted by adopting a proper direct wave suppression method; and unknown parameters of the horizontal distance, the target velocity and the included angle between the target track and the transmitting-receiving connection lines are estimated at corresponding moving time intervals when the target crosses the four transmitting-receiving connection lines according to different crossing modes. An arrangement mode is simple and flexible, and monitoring of sea areas and sea channels can be realized. The information of the time of the target crossing the transmitting-receiving connection lines, extracted by the method, is more accurate and reliable.
    Type: Application
    Filed: November 17, 2017
    Publication date: May 24, 2018
    Inventors: Kunde YANG, Chuanlin HE, Yuanliang MA, Bo LEI
  • Publication number: 20180128909
    Abstract: The present invention relates to a method for obtaining horizontal longitudinal correlation of a deep-sea great-depth sound field. Two testing positions with the same depth and different distances are selected near a deep-sea bottom; time delay differences between a direct wave of a deep sound source in a certain depth reaching two receiving positions and a surface-reflected wave are calculated according to a ray model; one testing position is fixed, and a horizontal spacing between the two positions is continuously changed to recalculate the time delay differences in different positions; and the time delay differences are substituted into a ray theory-based calculation formula of horizontal longitudinal correlation of the deep-sea great-depth sound field to obtain a change rule of the horizontal longitudinal correlation of a target region. The present invention greatly reduces amount of calculation, and is easy in engineering practice.
    Type: Application
    Filed: November 8, 2017
    Publication date: May 10, 2018
    Inventors: Kunde YANG, Hui LI, Rui DUAN, Zhengyao HE, Shunli DUAN, Bo LEI, Yina HAN
  • Patent number: 9894689
    Abstract: Example systems, methods, and logic are provided herein for detecting a numerical identifier of an endpoint. In one example, a connectivity manager establishes a wireless communication session with a fixed endpoint using a wireless communication protocol. The connectivity manager module then generates a Phone Book Access Profile (PBAP) request to download a phone number associated with the fixed endpoint. The connectivity manager module receives, via the wireless communication session, a PBAP response comprising a phone number identifying the fixed endpoint and inputs the phone number identifying the fixed endpoint into a field used for initiating a call to the fixed endpoint.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: February 13, 2018
    Assignee: Cisco Technology, Inc.
    Inventors: Junhua Ma, Bo Lei, Zhigang Peng, Yanhui Wang, Xiaohui Yu
  • Patent number: 9810723
    Abstract: Techniques are presented for determining current levels based on the behavior of a charge pump system while driving a load under regulation. While driving the load under regulation, the number of pump clocks during a set interval is counted. This can be compared to a reference that can be obtained, for example, from the numbers of cycles needed to drive a known load current over an interval of the duration. By comparing the counts, the amount of current being drawn by the load can be determined. This technique can be applied to determining leakage from circuit elements, such as word lines in a non-volatile memory.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: November 7, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Feng Pan, Jun Wang, Shankar Guhados, Bo Lei
  • Patent number: 9589645
    Abstract: Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: March 7, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Gautam Dusija, Chris Avila, Jonathan Hsu, Neil Darragh, Bo Lei
  • Patent number: 9548124
    Abstract: A memory device includes memory cells arranged in word lines. Due to variations in the fabrication process, with width and spacing between word lines can vary, resulting in widened threshold voltage distributions. In one approach, a programming parameter is optimized for each word line based on a measurement of the threshold voltage distributions in an initial programming operation. An adjustment to the programming parameter of a word line can be based, e.g., on measurements from adjacent word lines, and a position of the word line in a set of word lines. The programming parameter can include a programming mode such as a number of programming passes. Moreover, the programming parameters from one set of word lines can be used for another set of word lines having a similar physical layout due to the variations in the fabrication process.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: January 17, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Arash Hazeghi, Gerrit Jan Hemink, Dana Lee, Henry Chin, Bo Lei, Zhenming Zhou
  • Patent number: 9530504
    Abstract: A method is provided for programming non-volatile memory cells. The non-volatile memory cells are accessible by a plurality of word lines. The method includes using a four-pass programming technique to program a block of the non-volatile memory cells.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: December 27, 2016
    Assignee: SanDisk Technologies LLC
    Inventors: Bo Lei, Gerrit Jan Hemink, Masaaki Higashitani, Jun Wan, Zhenming Zhou
  • Patent number: 9403870
    Abstract: The invention is directed to methods for extracting phosvitin from egg yolk involving contacting the egg yolk or egg yolk protein granules with a solution having a salt concentration of about 10% to form a mixture; optionally, heating the mixture; adjusting the pH of the mixture to separate phosvitin from other proteins; recovering the phosvitin. The phosvitin extract may be dephosphorylated and hydrolyzed to produce phosvitin phosphopeptides.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: August 2, 2016
    Assignee: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA
    Inventors: Jianping Wu, Bo Lei, Jiandong Ren
  • Patent number: 9355713
    Abstract: In a Multi Level Cell (MLC) memory array block in which lower pages are written first, before any upper pages, the lower page data is subject to an exclusive OR (XOR) operation so that if any lower page becomes uncorrectable by ECC (UECC) then the page can be recovered using XOR. Lower pages in such blocks may be written in nonsequential order.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: May 31, 2016
    Assignee: SanDISK Technologies Inc.
    Inventors: Jianmin Huang, Bo Lei, Jun Wan, Gerrit Jan Hemink, Steven T. Sprouse, Dana Lee
  • Publication number: 20160098216
    Abstract: Systems, apparatuses, and methods are provided that refresh data in a memory. Data is programmed into the memory. After which, part or all of the data may be refreshed. The refresh of the data may be different from the initial programming of the data in one or more respects. For example, the refresh of the data may include fewer steps than the programming of the data and may be performed without erasing a section of memory. Further, the refresh of the data may be triggered in one of several ways. For example, after programming the data, the data may be analyzed for errors. Based on the number of errors found, the data may be refreshed.
    Type: Application
    Filed: October 6, 2014
    Publication date: April 7, 2016
    Applicant: SanDisk Technologies, Inc.
    Inventors: Jianmin Huang, Bo Lei, Jun Wan, Niles Yang
  • Publication number: 20160099057
    Abstract: Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.
    Type: Application
    Filed: October 6, 2014
    Publication date: April 7, 2016
    Inventors: Gautam Dusija, Chris Avila, Jonathan Hsu, Neil Darragh, Bo Lei
  • Publication number: 20160095141
    Abstract: Example systems, methods, and logic are provided herein for detecting a numerical identifier of an endpoint. In one example, a connectivity manager establishes a wireless communication session with a fixed endpoint using a wireless communication protocol. The connectivity manager module then generates a Phone Book Access Profile (PBAP) request to download a phone number associated with the fixed endpoint. The connectivity manager module receives, via the wireless communication session, a PBAP response comprising a phone number identifying the fixed endpoint and inputs the phone number identifying the fixed endpoint into a field used for initiating a call to the fixed endpoint.
    Type: Application
    Filed: September 30, 2014
    Publication date: March 31, 2016
    Applicant: CISCO TECHNOLOGY, INC.
    Inventors: Junhua Ma, Bo Lei, Zhigang Peng, Yanhui Wang, Xiaohui Yu
  • Publication number: 20150371703
    Abstract: A method is provided for programming non-volatile memory cells. The non-volatile memory cells are accessible by a plurality of word lines. The method includes using a four-pass programming technique to program a block of the non-volatile memory cells.
    Type: Application
    Filed: June 18, 2015
    Publication date: December 24, 2015
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Bo Lei, Gerrit Jan Hemink, Masaaki Higashitani, Jun Wan, Zhenming Zhou
  • Publication number: 20150332759
    Abstract: In a Multi Level Cell (MLC) memory array block in which lower pages are written first, before any upper pages, the lower page data is subject to an exclusive OR (XOR) operation so that if any lower page becomes uncorrectable by ECC (UECC) then the page can be recovered using XOR. Lower pages in such blocks may be written in nonsequential order.
    Type: Application
    Filed: October 30, 2014
    Publication date: November 19, 2015
    Inventors: Jianmin Huang, Bo Lei, Jun Wan, Gerrit Jan Hemink, Steven T. Sprouse, Dana Lee
  • Patent number: 9083231
    Abstract: Techniques are presented for improving the efficiency of charge pumps. A charge pump, or a stage of a charge pump, provides its output through a pass gate. For example, this could be a charge pump of a voltage doubler type, where the output is supplied through pass gate transistors whose gates are connected to receive the output of an auxiliary section, also of a voltage doubler type of design. The waveforms provided to the gates of the pass gate transistors are modified so that their low values are offset to a higher value to take into account the threshold voltage of the pass gate transistors. In a voltage doubler based example, this can be implemented by way of introducing diodes into each leg of the auxiliary section.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: July 14, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Feng Pan, Jonathan Huynh, Sung-En Wang, Bo Lei
  • Patent number: 9047970
    Abstract: In a non-volatile storage system, a reduced voltage is provided on a selected word line during a sensing operation, using down coupling from one or more adjacent word lines. Voltages of one or more adjacent word lines of a selected word line are driven down while a voltage of the selected word line is floated. Capacitive coupling from the one or more adjacent word lines to the selected word line reduces the voltage of the selected word line. The capacitive coupling can be provided during a read, a program-verify test or an erase-verify test. The erase-verify test can be performed on cells of even-numbered word lines while capacitive coupling is provided by odd-numbered word lines, or on cells of odd-numbered word lines while capacitive coupling is provided by even-numbered word lines. Voltages of non-adjacent word lines can be provided at fixed, pass voltage levels.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: June 2, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Jun Wan, Feng Pan, Bo Lei
  • Publication number: 20150117114
    Abstract: In a non-volatile storage system, a reduced voltage is provided on a selected word line during a sensing operation, using down coupling from one or more adjacent word lines. Voltages of one or more adjacent word lines of a selected word line are driven down while a voltage of the selected word line is floated. Capacitive coupling from the one or more adjacent word lines to the selected word line reduces the voltage of the selected word line. The capacitive coupling can be provided during a read, a program-verify test or an erase-verify test. The erase-verify test can be performed on cells of even-numbered word lines while capacitive coupling is provided by odd-numbered word lines, or on cells of odd-numbered word lines while capacitive coupling is provided by even-numbered word lines. Voltages of non-adjacent word lines can be provided at fixed, pass voltage levels.
    Type: Application
    Filed: October 28, 2013
    Publication date: April 30, 2015
    Applicant: SanDisk Technologies Inc.
    Inventors: Jun Wan, Feng Pan, Bo Lei
  • Publication number: 20150091637
    Abstract: Techniques are presented for improving the efficiency of charge pumps. A charge pump, or a stage of a charge pump, provides its output through a pass gate. For example, this could be a charge pump of a voltage doubler type, where the output is supplied through pass gate transistors whose gates are connected to receive the output of an auxiliary section, also of a voltage doubler type of design. The waveforms provided to the gates of the pass gate transistors are modified so that their low values are offset to a higher value to take into account the threshold voltage of the pass gate transistors. In a voltage doubler based example, this can be implemented by way of introducing diodes into each leg of the auxiliary section.
    Type: Application
    Filed: September 30, 2013
    Publication date: April 2, 2015
    Applicant: SanDisk Technologies Inc.
    Inventors: Feng Pan, Jonathan Huynh, Sung-En Wang, Bo Lei
  • Patent number: 8937835
    Abstract: A apparatus and process for reading data from non-volatile storage includes applying a read compare signal to a selected data memory cell of a NAND string, applying a first set of one or more read pass voltages to unselected data memory cells at both ends of the NAND string and applying a second set of one or more read pass voltages to unselected data memory cells between both ends of the NAND string and on both sides of the selected data memory cell. The second set of one or more read pass voltages are all higher than the first set of one or more read pass voltages.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: January 20, 2015
    Assignee: Sandisk Technologies Inc.
    Inventors: Bo Lei, Jun Wan, Feng Pan
  • Patent number: D823809
    Type: Grant
    Filed: July 29, 2017
    Date of Patent: July 24, 2018
    Assignee: CHENG UEI PRECISION INDUSTRY CO., LTD.
    Inventors: Feng Zhu, Dao Rui Sun, Bo Lei