Abstract: The present disclosure discloses a water recycling type greenhouse, including a greenhouse body; a water collection device is arranged in the greenhouse body; the water collection device is provided with an air inlet and an air outlet; a condensation portion and a reheating portion are arranged in the water collection device; and the water recycling type greenhouse further includes an energy supply system. Air in the greenhouse body can be poured into the water collection device from the air inlet, flow through the condensation portion and the reheating portion in sequence, and finally be discharged into the greenhouse body again from the air outlet. When the heated air is discharged into the greenhouse body again, a decrease of the temperature of the greenhouse is not likely to occur, and normal growth of plants is not easily affected.

Abstract: Disclosed are TCR-enriched clonotypes, and an acquisition method and use thereof. Amino acid sequences of the TCR-enriched clonotypes are: CAANRGSGYSTLTF (SEQ ID NO: 1)_CSARGERGEKLFF (SEQ ID NO: 2), CASSSGGSYIPTF (SEQ ID NO: 3)_CASSLAGGHETQYF (SEQ ID NO: 4), CAVNSYNTDKLIF (SEQ ID NO: 5)_CATSREEDNTYEQYF (SEQ ID NO: 6), CAVGGNEKLTF (SEQ ID NO: 7)_CASSQGTGRSSPLHF (SEQ ID NO: 8), or CAASAVGGAQKLVF (SEQ ID NO: 9)_CATSRGTLYGYTF (SEQ ID NO: 10), respectively. The TCR-enriched clonotypes can be used for vaccine development.

Abstract: A system for augmented-reality (AR)-assisted vehicle parking with operator-in-loop selections and alignments of feature point vicinities (FPVs) includes a vehicle, human-machine interfaces (HMIs), sensors detecting FPVs of a parking location and controllers. The controllers have a processor, memory, and input/output (I/O) ports in communication with the HMIs and sensors. The memory stores an AR-assisted parking application (ARAPA) executed by the processor. The AR-assisted parking application (ARAPA) has a training session (TS) and a live session (LS), and is activated upon completing parking at a parking spot at the parking location. The TS portion trains the ARAPA to recognize FPVs of the parking spot. The LS portion prompts an operator to select the parking spot, guides the operator into the parking spot by displaying trained FPVs onto live sensor data displayed on the HMI, and instructs the operator to align the trained FPVs with corresponding real-world FPVs by maneuvering the vehicle.

Abstract: A device for analyzing cell morphology and a method for identifying cells are provided. A digital camera photographs a cell image of a blood sample under a low-magnification objective lens. A processor identifies and positions suspected cells of preset type in the cell image to obtain an identification result. Based on the identification result and a target number, the processor determines a number of suspected cells of preset type to be identified and positioned under the low-magnification objective lens. The digital camera further photographs, under a high-magnification objective lens, the suspected cells of preset type identified and positioned, and then the processor identifies whether the suspected cells of preset type photographed are cells of preset type, to count the number of cells of preset type photographed under the high-magnification objective lens and obtain a statistical value. If the statistical value?the target number, photographing is stopped.

Abstract: Provided are a sample analyzer and a sample analysis method. The sample analyzer includes: a sampling apparatus configured to collect a blood sample; a sample preparation apparatus configured to mix the blood sample with a hemolytic agent and a dye to prepare a test sample liquid; an optical detection apparatus configured to detect side-scattered light signals and fluorescence signals generated by particles in the test sample liquid; and a processor configured to: generate a scatter diagram based on at least the side-scattered light signals and the fluorescence signals, and obtain a predetermined feature region, wherein an intensity of side-scattered light corresponding to a central position of the predetermined feature region is greater than an intensity of side-scattered light corresponding to a central position of a region containing neutrophil granulocyte population; and obtain a blast cell parameter based on the predetermined feature region.

Abstract: Data usage by networking and data processing services is measured using a timeslot system. The timeslots have multiple states for collecting, collecting with processing, and expired timeslots. Data from upstream components is reported to local manager clusters and placed into timeslots corresponding to a timestamp of the data. Data can be reported from local managers to an entitlement service and/or a cloud service portal. Timing inconsistencies due to latency or processing time can be resolved by accounting for a timestamp difference using a timestamp difference value between the timeslot time and the reporting time. Data can be deduplicated, cleaned, and/or compacted. Data can be also be version controlled, with timeslots maintaining a version number. Complete and accurate tracking of data usage and associated costs is improved by reporting and collecting usage data using state-based timeslots.

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

Abstract: Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH4. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

Abstract: Embodiments of the present disclosure generally relate to fabricating electronic devices, such as memory devices. In one or more embodiments, a microelectronic device is provided and includes a film stack disposed on a substrate and a patterned hard mask disposed on an upper surface of the film stack. The film stack has a stack thickness and contains a plurality of alternating layers of oxide layers and nitride layers. The microelectronic device also includes a plurality of openings having a depth disposed between a plurality of structures, each structure has a sidewall and each opening has a bottom, the depth is less than the stack thickness, and each opening has an aspect ratio of greater than 50 relative to the depth. The microelectronic device also includes an etch protection liner disposed on the patterned hard mask and the sidewalls.

Abstract: Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH4. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

Abstract: Embodiments of the present disclosure generally relate to fabricating electronic devices, such as memory devices. In one or more embodiments, a method for forming a device includes forming a film stack on a substrate, where the film stack contains a plurality of alternating layers of oxide layers and nitride layers and has a stack thickness, and etching the film stack to a first depth to form a plurality of openings between a plurality of structures. The method includes depositing an etch protection liner containing amorphous-silicon on the sidewalls and the bottoms of the structures, removing the etch protection liner from at least the bottoms of the openings, forming a plurality of holes by etching the film stack in the openings to further extend each bottom of the openings to a second depth of the hole, and removing the etch protection liner from the sidewalls.

Abstract: Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

Abstract: Methods of forming carbon polymer films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to a first carbon precursor to form a substrate surface with terminations based on the reactive functional groups of the first carbon precursor and exposed to a second carbon precursor to react with the surface terminations and form a carbon polymer film. Processing tools and non-transitory memories to perform the process are also disclosed.

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

Abstract: Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.

Abstract: Examples of the present technology include semiconductor processing methods to form diffusion barriers for germanium in a semiconductor structure. The methods may include forming a semiconductor layer stack from pairs of Si-and-SiGe layers. The Si-and-SiGe layer pairs may be formed by forming a silicon layer, and then forming the germanium barrier layer of the silicon layer. In some embodiments, the germanium-barrier layer may be less than or about 20 ?. A silicon-germanium layer may be formed on the germanium-barrier layer to complete the formation of the Si-and-SiGe layer pair. In some embodiments, the silicon layer may be an amorphous silicon layer, and the SiGe layer may be characterized by greater than or about 5 atom % germanium. Examples of the present technology also include semiconductor structures that include a silicon-germanium layer, a germanium-barrier layer, and a silicon layer.

Abstract: A post insulator includes an insulating post including a first end and a second end that are opposite to each other, a high-voltage-end grading ring connected to the first end of the insulating post, the high-voltage-end grading ring being insulated from the insulating post, a grounding-end grading ring connected to the second end of the insulating post, the grounding-end grading ring being insulated from the insulating post, and a charge control ring disposed on an outer surface of the insulating post, the charge control ring being insulated from the insulating post, and the charge control ring being configured to accumulate surface charges.

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material.

Abstract: Hydrogen free (low-H) silicon dioxide layers are disclosed. Some embodiments provide methods for forming low-H layers using hydrogen-free silicon precursors and hydrogen-free oxygen sources. Some embodiments provide methods for tuning the stress profile of low-H silicon dioxide films. Further, some embodiments of the disclosure provide oxide-nitride stacks which exhibit reduced stack bow after anneal.

Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.