Abstract: Methods of depositing a silicon nitride film at low temperatures are discussed. The silicon nitride films of some embodiments are highly conformal, have low etch rates, low atomic oxygen concentrations and/or good hermeticity. The films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize an ALD process comprising a nitrogen precursor, a silicon precursor and a plasma treatment in each cycle. Some embodiments perform the plasma treatment at a lower pressure than the precursor exposures.

Abstract: The present invention provides a method and an apparatus for compiling a source code object, and a computer, and the method includes: determining, by a compiler, an object type of a to-be-compiled object in source code, where a counter is set for the to-be-compiled object; and when the object type of the to-be-compiled object is a type that can be operated by only one thread at one moment, setting, by the compiler, a counter counting rule for the counter of the to-be-compiled object. Using the method, the apparatus and the computer of the present invention may improve efficiency for compiling an object in source code.

Abstract: The present invention provides multispecific Fab fusion proteins (MSFP) that specifically bind to CD3 and EpCAM. The present invention further provides uses of the MSFPs for the preparation of pharmaceutical compositions, methods of treating cancer, and kits comprising the MSFPs. Also provided are anti-EpCAM antibodies or antigen-binding fragments thereof.

Abstract: A method for stabilizing quantum dots is disclosed, wherein the method includes the introduction of a first monomer into a miniemulsion system. In certain embodiments, the first monomer is a crosslinking polymer. In certain embodiments, a second monomer is added to the system to stabilize the quantum dots. In addition, a method of increasing the brightness of the quantum dots by adding a redox initiator system at a low temperature to reduce fluorescence quenching is also disclosed.

Abstract: A method and device for playing audio are provided. The method for playing audio includes the following steps: acquiring audio playing information corresponding to an audio playing instruction when the audio playing instruction is received (S10); determining whether audio data obtained after an audio file corresponding to the audio playing information is decoded is stored in a preset storage location (S20); and if yes, invoking the audio data for audio playing (S30).

Abstract: An image capture device and an image compensating method are provided. The image compensating method is for the image capture device and includes following steps. An image is captured under a current light source. The current light source is detected and a white balance process is executed so as to obtain current gain information of the current light source. A modifying parameter is determined according to the current gain information and reference gain information. The reference gain information is corresponding to a plurality of predefined color temperatures which are different to each other. A first shading compensation table is modified by using the modifying parameter to obtain a second shading compensation table. The image is compensated by using the second shading compensation table so as to generate a compensated image.

Abstract: Disclosed herein is a method for stabilizing quantum dots. The method comprises introducing a first monomer into a mini emulsion system. The first monomer is a crosslinking polymer. A second monomer is added to the system so as to stabilize the quantum dots. Also disclosed is a method of increasing the brightness of the quantum dots by adding a redox initiator system at a low temperature to reduce fluorescence quenching.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.