Abstract: An image capture device and an image compensating method are provided. The image compensating method is for the image capture device and includes following steps. An image is captured under a current light source. The current light source is detected and a white balance process is executed so as to obtain current gain information of the current light source. A modifying parameter is determined according to the current gain information and reference gain information. The reference gain information is corresponding to a plurality of predefined color temperatures which are different to each other. A first shading compensation table is modified by using the modifying parameter to obtain a second shading compensation table. The image is compensated by using the second shading compensation table so as to generate a compensated image.

Abstract: Disclosed herein is a method for stabilizing quantum dots. The method comprises introducing a first monomer into a mini emulsion system. The first monomer is a crosslinking polymer. A second monomer is added to the system so as to stabilize the quantum dots. Also disclosed is a method of increasing the brightness of the quantum dots by adding a redox initiator system at a low temperature to reduce fluorescence quenching.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.

Abstract: Methods are provided of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. The fluent gas has an average molecular weight less than 5 amu. A first high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas to deposit a first portion of the silicon oxide film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components having relative contributions defined by a first deposition/sputter ratio.