Patents by Inventor Bo-Yu Lai

Bo-Yu Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250151357
    Abstract: Semiconductor structures and methods for forming the same are provided. A semiconductor structure according to the present disclosure includes a substrate, a first base fin and a second base fin rising from the substrate, an isolation feature disposed over the substrate and between the first base fin and the second base fin, a first bottom epitaxial feature over the first base fin, a second bottom epitaxial feature over the second base fin, an isolation layer on the first bottom epitaxial feature, a first source/drain feature over the isolation layer, a second source/drain feature disposed over and in contact with the second bottom epitaxial feature, a contact etch stop layer (CESL) over the first source/drain feature and the isolation feature, a first interlayer dielectric (ILD) layer over the CESL, and a second ILD layer over and in direct contact with the second source/drain feature.
    Type: Application
    Filed: November 8, 2023
    Publication date: May 8, 2025
    Inventors: Bo-Yu Lai, Chung-I Yang, Wei-Yang Lee, Chih-Ching Wang
  • Patent number: 12278145
    Abstract: Semiconductor devices and methods of fabricating the semiconductor devices are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin as an initial step in forming a multilayer source/drain region. The opening is formed into a parasitic channel region of the fin. Once the opening has been formed, a source/drain barrier material is deposited using a bottom-up deposition process at the bottom of the opening to a level below the multilayer stack. A multilayer source/drain region is formed over the source/drain barrier material. A stack of nanostructures is formed by removing sacrificial layers of the multilayer stack, the multilayer source/drain region being electrically coupled to the stack of nanostructures.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: April 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Wei Lee, Chii-Horng Li, Bang-Ting Yan, Bo-Yu Lai, Wei-Yang Lee, Chia-Pin Lin
  • Patent number: 12266655
    Abstract: A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. A top portion of the semiconductor fin is formed of a first semiconductor material. A semiconductor cap layer is formed on a top surface and sidewalls of the semiconductor fin. The semiconductor cap layer is formed of a second semiconductor material different from the first semiconductor material. The method further includes forming a gate stack on the semiconductor cap layer, forming a gate spacer on a sidewall of the gate stack, etching a portion of the semiconductor fin on a side of the gate stack to form a first recess extending into the semiconductor fin, recessing the semiconductor cap layer to form a second recess directly underlying a portion of the gate spacer, and performing an epitaxy to grow an epitaxy region extending into both the first recess and the second recess.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: April 1, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Ting Chen, Bo-Yu Lai, Chien-Wei Lee, Hsueh-Chang Sung, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 12249640
    Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.
    Type: Grant
    Filed: November 30, 2023
    Date of Patent: March 11, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 12237230
    Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Bo-Yu Lai, Jyun-Chih Lin, Yen-Ting Chen, Wei-Yang Lee, Chia-Pin Lin, Wei Hao Lu, Li-Li Su
  • Patent number: 12218138
    Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.
    Type: Grant
    Filed: November 15, 2023
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Yu Lai, Kai-Hsuan Lee, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 12191370
    Abstract: A method includes forming a stack of channel layers and sacrificial layers on a substrate. The channel layers and the sacrificial layers have different material compositions and being alternatingly disposed in a vertical direction. The method further includes patterning the stack to form a semiconductor fin, forming an isolation feature on sidewalls of the semiconductor fin, recessing the semiconductor fin, thereby forming a source/drain recess, such that a recessed top surface of the semiconductor fin is below a top surface of the isolation feature, growing a base epitaxial layer from the recessed top surface of the semiconductor fin, depositing an insulation layer in the source/drain recess, and forming an epitaxial feature in the source/drain recess, wherein the epitaxial feature is above the insulation layer. The insulation layer is above the base epitaxial layer and above a bottommost channel layer.
    Type: Grant
    Filed: April 6, 2022
    Date of Patent: January 7, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Bo-Yu Lai, Wei-Yang Lee, Ming-Lung Cheng, Chia-Pin Lin, Yuan-Ching Peng
  • Publication number: 20240396797
    Abstract: A docking station includes a network interface controller, a processor, and an output interface controller. The processor is connected to the network interface controller and the output interface controller. The network interface controller receives an operation instruction from an external control device and correspondingly translates the instruction into a communication protocol message. The processor correspondingly writes the communication protocol message into the memory of the processor to update the firmware of the docking station; or the processor correspondingly transmits the communication protocol message to the output interface controller, so that the output interface controller converts the communication protocol message into a display setting instruction and transmits the display setting instruction to display device so as to adjust display parameter of the display device.
    Type: Application
    Filed: May 21, 2024
    Publication date: November 28, 2024
    Inventors: Tzuo-Bo LIN, Bo Yu LAI, You-Wen CHIOU, Tien-Wei KAO, Yuh Wey LIN, Chien-Wei CHEN
  • Publication number: 20240379425
    Abstract: A method includes forming a device region over a substrate; forming a first dielectric layer over the device region; forming an opening in the first dielectric layer; conformally depositing a first conductive material along sidewalls and bottom surfaces of the opening; depositing a second conductive material on the first conductive material to fill the opening, wherein the second conductive material is different from the first conductive material; and performing a first thermal process to form an interface region extending from a first region of the first conductive material to a second region of the second conductive material, wherein the interface region includes a homogeneous mixture of the first conductive material and the second conductive material.
    Type: Application
    Filed: July 23, 2024
    Publication date: November 14, 2024
    Inventors: Bo-Yu Lai, Chin-Szu Lee, Szu-Hua Wu, Shuen-Shin Liang, Chia-Hung Chu, Keng-Chu Lin, Sung-Li Wang
  • Publication number: 20240378007
    Abstract: A media docking device is provided and includes an input module, an output module, and a process module. The input module is electrically connected to a media source device. The output module is electrically connected to multiple media playing devices and obtains device data from the media playing devices. The process module transmits the device data and screen numbers to the media source device through the input module. When determining to perform a display switch procedure, the process module modifies the device data and the screen numbers, and transmits the modified device data and the modified screen numbers to the media source device through the input module. The process module also transmits media data from the media source device to the corresponding media playing device.
    Type: Application
    Filed: May 8, 2024
    Publication date: November 14, 2024
    Inventors: Bo Yu LAI, Tsung-Han LI, You-Wen CHIOU, Kuan-Chi CHOU, Chien-Wei CHEN
  • Publication number: 20240186372
    Abstract: In one example aspect, a method for integrated circuit (IC) fabrication comprises providing a device structure including a substrate, a source/drain (S/D) feature on the substrate, a gate stack on the substrate, a contact hole over the S/D feature; and a dummy feature over the S/D feature and between the gate stack and the contact hole. The method further comprises forming in the contact hole a contact plug that is electrically coupled to the S/D feature, and, after forming the contact plug, selectively removing the dummy feature to form an air gap that extends higher than a top surface of the gate stack. The method further comprises forming over the contact plug a seal layer that covers the air gap.
    Type: Application
    Filed: February 12, 2024
    Publication date: June 6, 2024
    Inventors: Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin, Yen-Ming Chen
  • Publication number: 20240114207
    Abstract: A media docking device includes an input module, an output module and a processing module. The input module is electrically connected to a media source device for receiving media data. The output module is electrically connected to a media play device. The processing module determines if an instruction is received from the media source device or a remote device. If the instruction is not received, the processing module transfers the media data to the output module to transmit to the media play device. If the instruction is received, the processing module limits a transmission of the media data according to the instruction, such that the media data will not be completely played by the media play device.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 4, 2024
    Inventors: Chien-Wei CHEN, Tsung-Han LI, You-Wen CHIOU, Kuan-Chi CHOU, Bo Yu LAI
  • Publication number: 20240111849
    Abstract: A media docking device includes an input circuit, an output circuit and a processing circuit. The input circuit is electrically connected to a media source device for receiving media data. The output circuit is electrically connected to a media play device. The processing circuit is electrically connected to the input circuit and the output circuit. The processing circuit determines if a verification procedure is passed. If the verification procedure is passed, the processing circuit transfers the media data to the media play device. If the verification procedure is not passed, the processing circuit limits a transmission of the media data, such that the media data will not be completely played by the media play device.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 4, 2024
    Inventors: Chien-Wei CHEN, Tsung-Han LI, You-Wen CHIOU, Kuan-Chi CHOU, Bo Yu LAI
  • Publication number: 20240113202
    Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.
    Type: Application
    Filed: December 1, 2023
    Publication date: April 4, 2024
    Inventors: Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Kai-Hsuan Lee, Sai-Hooi Yeong, Tien-I Bao, Wei-Ken Lin
  • Publication number: 20240113201
    Abstract: Methods and structures for modulating an inner spacer profile include providing a fin having an epitaxial layer stack including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing the plurality of dummy layers to form a first gap between adjacent semiconductor channel layers of the plurality of semiconductor channel layers. Thereafter, in some examples, the method includes conformally depositing a dielectric layer to substantially fill the first gap between the adjacent semiconductor channel layers. In some cases, the method further includes etching exposed lateral surfaces of the dielectric layer to form an etched-back dielectric layer that defines substantially V-shaped recesses. In some embodiments, the method further includes forming a substantially V-shaped inner spacer within the substantially V-shaped recesses.
    Type: Application
    Filed: January 25, 2023
    Publication date: April 4, 2024
    Inventors: Chih-Ching WANG, Wei-Yang LEE, Bo-Yu LAI, Chung-I YANG, Sung-En LIN
  • Publication number: 20240097010
    Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 21, 2024
    Inventors: Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20240088155
    Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Yu LAI, Kai-Hsuan LEE, Wei-Yang LEE, Feng-Cheng YANG, Yen-Ming CHEN
  • Patent number: 11901408
    Abstract: In one example aspect, a method for integrated circuit (IC) fabrication comprises providing a device structure including a substrate, a source/drain (S/D) feature on the substrate, a gate stack on the substrate, a contact hole over the S/D feature; and a dummy feature over the S/D feature and between the gate stack and the contact hole. The method further comprises forming in the contact hole a contact plug that is electrically coupled to the S/D feature, and, after forming the contact plug, selectively removing the dummy feature to form an air gap that extends higher than a top surface of the gate stack. The method further comprises forming over the contact plug a seal layer that covers the air gap.
    Type: Grant
    Filed: February 15, 2021
    Date of Patent: February 13, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin, Yen-Ming Chen
  • Patent number: 11862713
    Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: January 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 11855097
    Abstract: A semiconductor device includes a gate stack, an epitaxy structure, a first spacer, a second spacer, and a dielectric residue. The gate stack is over a substrate. The epitaxy structure is formed raised above the substrate. The first spacer is on a sidewall of the gate stack. The first spacer and the epitaxy structure define a void therebetween. The second spacer seals the void between the first spacer and the epitaxy structure. The dielectric residue is in the void and has an upper portion and a lower portion under the upper portion. The upper portion of the dielectric residue has a silicon-to-nitrogen atomic ratio higher than a silicon-to-nitrogen atomic ratio of the lower portion of the dielectric residue.
    Type: Grant
    Filed: August 10, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Yu Lai, Kai-Hsuan Lee, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen