Abstract: A semiconductor package which is structured to allow for the edge mounting thereof in a vertical mount orientation. The semiconductor package comprises a flexible substrate or “flex circuit.” The flexible substrate includes a conductive pattern disposed on a first surface thereof, and a plurality of conductive pads or terminals disposed on a second surface thereof which is disposed in opposed relation to the first surface. Mounted to the first surface of the flexible substrate are one or more electronic components such as semiconductor dies. The semiconductor die(s) is/are electrically connected to the conductive pattern, and thereafter covered or encapsulated by a package body applied to a portion of the first surface of the flexible substrate. That portion of the flexible substrate including the conductive pads or terminals formed on the second surface thereof is thereafter folded and adhered to a portion of the package body through the use of a suitable adhesive.

Abstract: A semiconductor device has a base substrate having a plurality of metal traces and a plurality of base vias. An opening is formed through the base substrate. At least one die is attached to the first surface of the substrate and positioned over the opening. A cover substrate has a plurality of metal traces. A cavity in the cover substrate forms side wall sections around the cavity. The cover substrate is attached to the base substrate so the at least one die is positioned in the interior of the cavity. Ground planes in the base substrate are coupled to ground planes in the cover substrate to form an RF shield around the at least one die.

Abstract: A semiconductor device has a base substrate having a plurality of metal traces and a plurality of base vias. An opening is formed through the base substrate. At least one die is attached to the first surface of the substrate and positioned over the opening. A cover substrate has a plurality of metal traces. A cavity in the cover substrate forms side wall sections around the cavity. The cover substrate is attached to the base substrate so the at least one die is positioned in the interior of the cavity. Ground planes in the base substrate are coupled to ground planes in the cover substrate to form an RF shield around the at least one die.

Abstract: A semiconductor device has a base substrate having a plurality of metal traces and a plurality of base vias. An opening is formed through the base substrate. A cover substrate having a plurality of metal traces and a plurality of cover vias is provided. A first die is attached to the first surface of the substrate and positioned over the opening. Side members are coupled to ground planes on the base substrate and cover substrate to form an RF shield around the first die. At least one wirebond having a first end attached to the first die and a second end attached to a metal trace of the base substrate is provided. The at least one wirebond forms a loop wherein a top section of the loop contacts a metal trace of the cover substrate.

Abstract: A method of forming a package includes forming a circuit pattern on a first carrier and embedding the circuit pattern in a dielectric material on a second carrier. The first carrier is removed and a buildup dielectric material is mounted to the dielectric material and the circuit pattern. Laser-ablated artifacts are formed in the buildup dielectric material and filled with an electrically conductive material to form a buildup circuit pattern. The second carrier is patterned into a stiffener, which provides rigidity to the thin package.

Abstract: A semiconductor package has a substrate. An opening is formed through the substrate. A first RF shield is formed around a perimeter of the opening. A first die is attached to the first surface of the substrate and positioned over the opening.

Abstract: A method includes forming a substrate layer, the substrate layer including a circuit pattern having terminals and bump pads. A stiffener is formed, the stiffener including via apertures having electrically conductive via aperture sidewalls and an electronic component opening. The stiffener is attached to the substrate layer. The electrically conductive via aperture sidewalls are electrically connected to the terminals. An electronic component is mounted to the bump pads and within the electronic component opening thus minimizing the height of the package. Further, the stiffener minimizing undesirable bending of the package and acts as an internal heat sink.

Abstract: A capture pad structure includes a lower dielectric layer, a capture pad embedded within the lower dielectric layer, the capture pad comprising a plurality of linear segments. To form the capture pad, a focused laser beam is moved linearly to form linear channels in the dielectric layer. These channels are filled with an electrically conductive material to form the capture pad.

Abstract: A semiconductor package has a substrate. An opening is formed through the substrate. A first RF shield is formed around a perimeter of the opening. A first die is attached to the first surface of the substrate and positioned over the opening.

Abstract: A method of forming a wafer level package includes attaching a laser-activated dielectric material to an integrated circuit substrate to form an assembly, the integrated circuit substrate including a plurality of electronic components having terminals on first surfaces thereof. The laser-activated dielectric material is laser activated and ablated with a laser to form laser-ablated artifacts in the laser-activated dielectric material and simultaneously to form an electrically conductive laser-activated layer lining the laser-ablated artifacts. The laser-ablated artifacts are filled using an electroless plating process in which an electrically conductive filler material is selectively plated on the laser-activated layer to form an embedded circuit pattern within the laser-activated dielectric material.