Patents by Inventor Boil Pashmakov
Boil Pashmakov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20120247553Abstract: A method of manufacturing a structure can include forming a buffer layer on a transparent conductive oxide layer, where the buffer layer includes a layer including zinc and tin, and the transparent conductive oxide layer includes a layer including cadmium and tin.Type: ApplicationFiled: March 26, 2012Publication date: October 4, 2012Inventors: Keith J. Burrows, Annette Krisko, Boil Pashmakov, Harshad Patil, Yu Yang, Zhibo Zhao
-
Patent number: 8222125Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.Type: GrantFiled: August 12, 2010Date of Patent: July 17, 2012Assignee: Ovshinsky Innovation, LLCInventors: Stanford R. Ovshinsky, David Strand, Patrick Klersy, Boil Pashmakov
-
Patent number: 8198529Abstract: A photovoltaic cell can include a transparent conductive layer including cadmium stannate.Type: GrantFiled: May 1, 2009Date of Patent: June 12, 2012Assignee: First Solar, Inc.Inventors: Dale Roberts, John German, Keith J. Burrows, Benyamin Buller, Boil Pashmakov
-
Publication number: 20120115274Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.Type: ApplicationFiled: January 22, 2012Publication date: May 10, 2012Inventors: Stanford R Ovshinsky, David Strand, Patrick Klersy, Boil Pashmakov
-
Publication number: 20120040518Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.Type: ApplicationFiled: October 30, 2011Publication date: February 16, 2012Inventors: Stanford R. Ovshinsky, David Strand, Patrick Klersy, Boil Pashmakov
-
Publication number: 20120040492Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to activate or energize them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. Suitable deposition species include precursors that contain silicon, germanium, fluorine, and/or hydrogen.Type: ApplicationFiled: August 12, 2010Publication date: February 16, 2012Inventors: Stanford R. Ovshinsky, David Strand, Patrick Klersy, Boil Pashmakov
-
Publication number: 20120040493Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.Type: ApplicationFiled: August 12, 2010Publication date: February 16, 2012Inventors: Stanford R. Ovshinsky, David Strand, Patrick Klersy, Boil Pashmakov
-
Patent number: 8101245Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.Type: GrantFiled: August 12, 2010Date of Patent: January 24, 2012Assignee: Ovshinsky Innovation, LLCInventors: Stanford R. Ovshinsky, David Strand, Patrick Klersy, Boil Pashmakov
-
Patent number: 8048782Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.Type: GrantFiled: August 12, 2010Date of Patent: November 1, 2011Assignee: Ovshinsky Innovation LLCInventors: Stanford R. Ovshinsky, David Strand, Patrick Klersy, Boil Pashmakov
-
Publication number: 20110041917Abstract: A solar cell with a doped transparent conductive oxide layer is disclosed. The doped transparent conductive oxide layer can improve the efficiency of CdTe-based or other kinds of solar cells.Type: ApplicationFiled: August 20, 2010Publication date: February 24, 2011Applicant: First Solar, Inc.Inventors: Douglas Dauson, Scott Mills, Boil Pashmakov, Dale Roberts, Zhibo Zhao
-
Publication number: 20100319775Abstract: A method for manufacturing a multi-layered structure can include annealing a stack, where the annealing can include heating the stack in the presence of an inert gas, and where the stack includes a layer including cadmium and tin.Type: ApplicationFiled: June 21, 2010Publication date: December 23, 2010Applicant: First Solar, Inc.Inventors: Scott Mills, Dale Roberts, David Eaglesham, Benyamin Buller, Boil Pashmakov, Zhibo Zhao, Yu Yang
-
Publication number: 20100186815Abstract: A photovoltaic device can include a semiconductor absorber layer with improved cadmium telluride orientation.Type: ApplicationFiled: January 14, 2010Publication date: July 29, 2010Applicant: First Solar, Inc.Inventors: Yu Yang, Boil Pashmakov, Zhibo Zhao
-
Publication number: 20090272437Abstract: A photovoltaic cell can include a transparent conductive layer including cadmium stannate.Type: ApplicationFiled: May 1, 2009Publication date: November 5, 2009Applicant: First Solar, Inc.Inventors: Dale Roberts, John German, Keith J. Burrows, Benyamin Buller, Boil Pashmakov
-
Patent number: 7529123Abstract: A method of operating a multi-terminal electronic device. The device includes an active material in electrical communication with three or more electrical terminals. The active material is able to undergo a transformation from one state to another state, where the two states differ in resistance. The method includes the step of providing energy between one pair of terminals of the device, where the provided energy effects a change in the state of the active material adjacent to one or more other terminals of the device. In one embodiment, energy is applied between a first terminal and a second terminal of a three-terminal device and the state of the active material adjacent to the third terminal is altered. In one embodiment, energy is applied in the form of electrical energy and the active material is a phase change material that undergoes a transformation from one structural state to another structural state.Type: GrantFiled: June 13, 2006Date of Patent: May 5, 2009Assignee: Ovonyx, Inc.Inventors: Stanford R. Ovshinsky, Boil Pashmakov
-
Publication number: 20090057645Abstract: A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.Type: ApplicationFiled: October 30, 2008Publication date: March 5, 2009Inventors: Sergey A. Kostylev, Stanford R. Ovshinsky, Wolodymyr Czubatyj, Patrick Klersy, Boil Pashmakov
-
Patent number: 7473574Abstract: A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.Type: GrantFiled: April 1, 2006Date of Patent: January 6, 2009Assignee: Ovonyx, Inc.Inventors: Sergey A. Kostylev, Stanford R. Ovshinsky, Wolodymyr Czubatyj, Patrick Klersy, Boil Pashmakov
-
Patent number: 7440990Abstract: A method of factoring numbers in a non-binary computation scheme and more particularly, a method of factoring numbers utilizing a digital multistate phase change material. The method includes providing energy in an amount characteristic of the number to be factored to a phase change material programmed according to a potential factor of the number. The programming strategy provides for the setting of the phase change material once for each time a multiple of a potential factor is present in the number to be factored. By counting the number of multiples and assessing the state of the phase change material upon execution of the method, a determination of whether a potential factor is indeed a factor may be made. A given volume of phase change material may be reprogrammed for different factors or separate volumes of phase change material may be employed for different factors.Type: GrantFiled: December 3, 2003Date of Patent: October 21, 2008Inventors: Stanford R. Ovshinsky, Boil Pashmakov
-
Patent number: 7407829Abstract: A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.Type: GrantFiled: March 12, 2004Date of Patent: August 5, 2008Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Stanford R. Ovshinsky, Guy C. Wicker, Patrick J. Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey A. Kostylev
-
Publication number: 20070235709Abstract: A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.Type: ApplicationFiled: April 1, 2006Publication date: October 11, 2007Inventors: Sergey Kostylev, Stanford Ovshinsky, Wolodymyr Czubatyj, Patrick Klersy, Boil Pashmakov
-
Patent number: 7186998Abstract: A multi-terminal logic device. The device includes a phase change material having crystalline and amorphous states in electrical communication with three or more electrical terminals. The phase change material is able to undergo reversible transformations between amorphous and crystalline states in response to applied electrical energy where the amorphous and crystalline states show measurably distinct electrical resistances. Electrical energy in the form of current or voltage pulses applied between a pair of terminals influences the structural state and measured electrical resistance between the terminals. In the instant devices, independent input signals are provided between different pairs of terminals and the output is measured as the resistance between yet another pair of terminals.Type: GrantFiled: January 20, 2004Date of Patent: March 6, 2007Assignee: Energy Conversion Devices, Inc.Inventors: Stanford R. Ovshinsky, Boil Pashmakov