Abstract: A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.

Abstract: A universal memory element having multi-level, non-detectable states and methods and apparatus for programming the same, and methods and applications embodying the same in neural networks, artificial intelligence and data storage systems. The universal memory element is programmed by applying one or more sub-interval energy pulses insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify the memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.

Abstract: An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.

Abstract: A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.

Abstract: An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be set to a specific starting or erased resistance value. The memory element includes resistive layers for controlling the distribution of electrical energy within the memory material, heating layers for transferring heat energy into the memory material, and thermal insulation layers for reducing the loss of heat energy from the memory material.

Abstract: Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify said memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.

Abstract: A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.