Abstract: Provided is a power saving device using a toilet seat cover of a bidet. The device includes: a toilet seat cover sensor for detecting whether the toilet seat cover is opened or closed and outputting an electrical signal corresponding the detected result; and a control means for controlling the toilet seat and the warm water to be at low temperatures on the basis of the detected result of the toilet seat cover sensor when a power saving mode is OFF and the bidet is not used. Therefore, it is possible to remarkably reduce power consumption of the bidet during a standby mode.

Abstract: A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

Abstract: An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH4)2S2O8), an azole compound and water. The etchant does not include hydrogen peroxide. Thus, the etchant may etch a metal layer including copper so that an etched copper layer has a tapered profile. Furthermore, the etchant may have a high stability to maintain etching ability for a longer time. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

Abstract: A display substrate includes a gate line, a data line, a pixel electrode and a source pad part. The gate line is formed on a base substrate. The data line crosses the gate line to define a pixel area. The pixel electrode makes contact with the base substrate. The source pad part is formed on an end portion of the data line, the source pad part including a source metal layer, a conductive etch stop layer formed on the source metal layer and a source pad electrode formed on the conductive etch stop layer. Thus, the conductive etch stop layer of the source pad part prevents the source metal layer of the source pad part from being damaged and the conductive etch stop layer of the source pad part may fully make contact with the source pad electrode.

Abstract: A thin film transistor substrate that has reduced production cost and defect rate is presented. The thin film transistor substrate includes a gate wiring line formed on an insulating substrate and including a gate electrode, a data wiring line formed on the gate wiring line and including a source electrode and a drain electrode, a passivation layer pattern formed on parts of the data wiring line other than the drain electrode and a pixel region, and a pixel electrode electrically connected to the drain electrode. The pixel electrode includes zinc oxide.

Abstract: A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.

Abstract: A substrate is inclined when treatment liquid is ejected onto the substrate to remove photoresist from the substrate. Uniform processing of the substrate with the treatment liquid and collection of the treatment liquid are thus facilitated. Collected treatment liquid is treated with ozone and then reused.

Abstract: A thin film panel includes a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line, including a source electrode, and a drain electrode formed on the gate insulating layer or the semiconductor layer, and a pixel electrode connected to the drain electrode, wherein at least one of the gate line and the data line and drain electrode includes a first conductive layer made of a molybdenum Mo-niobium Nb alloy and a second conductive layer made of a copper Cu-containing metal.

Abstract: A method of manufacturing a thin film transistor array panel, including: forming gate lines on a substrate; forming a gate insulating layer on the gate lines; forming semiconductor layers on the gate insulating layer; forming data lines and drain electrodes on the semiconductor layers; depositing a passivation layer on the data lines and the drain electrodes; forming a first photoresist layer including a first portion and a second portion that is thinner than the first portion on the passivation layer; forming a first preliminary contact hole exposing the data lines by etching the passivation layer by using the first photoresist layer as a mask; removing the second portion of the first photoresist; forming a first contact hole by expanding the first preliminary contact hole and opening portions by etching the passivation layer by using the first portion of the first photoresist layer as a mask; depositing a conductor layer; and forming pixel electrodes in the opening portions and a first contact assistant mem

Abstract: A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

Abstract: A device and a method for using a history menu on a mobile terminal that has a history data base for storing a history of executions of contents, which allows easy execution of recently used menu or content are provided. The method includes extracting, upon execution of content on the mobile terminal, content information pertaining to the executed content, storing the extracted content information in the history database, displaying, if a history key is input, content information stored in the history database and executing, upon selecting one of the displayed content information, content corresponding to the selected content information. The method allows display of a list of contents using a call key while enabling a user to execute content upon selection, thus making it easier for the user to re-execute recently used contents.

Abstract: An integrated content file search method for a mobile terminal and a mobile terminal implementing the same are provide, in which content files stored in the mobile terminal in a hierarchical or non-hierarchical structure are searched in an integrated manner, and selection of one of the found content files causes immediate execution of the selected content file. A search mode for a content file search is set, a search string from a user is input, the input search string is displayed on a display unit of the mobile terminal, the text entry of content files stored in the mobile terminal are accessed, the text entry is verified to determine whether the text entry contains the input search string, a textual excerpt from the text entry containing the input search string is displayed on the display unit, and a content file that contains the displayed textual excerpt is executed.

Abstract: A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern an

Abstract: Provided is a power saving device using a toilet seat cover of a bidet. The device includes: a toilet seat cover sensor for detecting whether the toilet seat cover is opened or closed and outputting an electrical signal corresponding the detected result; and a control means for controlling the toilet seat and the warm water to be at low temperatures on the basis of the detected result of the toilet seat cover sensor when a power saving mode is OFF and the bidet is not used. Therefore, it is possible to remarkably reduce power consumption of the bidet during a standby mode.

Abstract: Provided is a photoresist (PR) stripping apparatus that enables the recycling of a photoresist stripper and utilizes a continuous filtering action during a filter operation. The PR-stripping apparatus includes a PR stripping tank for receiving a substrate having a PR pattern is disposed and for stripping of the PR pattern, a PR stripper recovery pipe for recovering a PR stripper from the PR stripping tank two or more filter units for filtering the PR stripper returned by the PR striper recovery pipe, and a PR stripper supply pipe for supplying the filtered PR stripper to the PR stripping tank. The two or more filter units are connected in parallel to each other between the PR stripper recovery pipe and the PR stripper supply pipe.

Abstract: A thin film transistor array panel includes a pixel electrode formed on a substrate, a gate line formed on the pixel electrode, a gate insulating film formed on the gate line, a semiconductor formed on the gate insulating film, a data line and a drain electrode formed on the gate insulating film, and a passivation layer formed on portions of the data line and the drain electrode. The gate line includes a first film formed on the same layer and with the same material as the pixel electrode and a second film formed on the first film.

Abstract: A multistage interrupt controller provides a multistage storage means that processes external interrupt signals, including a plurality of multistage interrupt reception registers that can receive and provide temporary storage for corresponding external interrupt signals, an interrupt priority determining circuit that can receive the external interrupt signals from the multistage interrupt reception registers, determine priorities of the external interrupt signals, and dispose of the external interrupt signals according to the priorities, and a logical operator that inverts signals generated by the corresponding multistage interrupt reception registers and provides a logical feedback signal to the multistage interrupt reception registers.

Abstract: In a glitch free clock multiplexer circuit and a method thereof, the glitch free clock multiplexer circuit includes a delay unit for receiving asynchronous clock signals (Clock A, Clock B) and an external selection signal (Sel) and outputting a delay signal by delaying a clock signal selected by the external selection signal (Sel) for a certain clock cycle, a state region transition generating unit for comparing the delay signal with a count value provided from a user, outputting a first control signal (Sel_clock) according to a comparison value and a second control signal (enable) for controlling the first control signal in a logic low state, and a glitch removal unit for outputting a clock output signal (Clock_out) by performing an AND operation of a temporary clock signal (Temp_clock) selected by the first control signal and a third control signal generated by delaying the second control signal (enable) for a certain clock cycle.

Abstract: In a glitch free clock multiplexer circuit and a method thereof, the glitch free clock multiplexer circuit includes a delay unit for receiving asynchronous clock signals (Clock A, Clock B) and an external selection signal (Sel) and outputting a delay signal by delaying a clock signal selected by the external selection signal (Sel) for a certain clock cycle, a state region transition generating unit for comparing the delay signal with a count value provided from a user, outputting a first control signal (Sel_clock) according to a comparison value and a second control signal (enable) for controlling the first control signal in a logic low state, and a glitch removal unit for outputting a clock output signal (Clock_out) by performing an AND operation of a temporary clock signal (Temp_clock) selected by the first control signal and a third control signal generated by delaying the second control signal (enable) for a certain clock cycle.

Abstract: A pipeline stop circuit for an external memory access which is capable of effectively performing a pipeline operation by temporarily stopping a pipeline operation, which is being operated, until data are prepared in the memory accessed, when accessing an external memory or a slow internal memory.