Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

Abstract: Provided are a piperidine derivative compound, a hydrate thereof, a solvate thereof, or a pharmaceutically acceptable salt thereof; and a pharmaceutical composition for the prevention or treatment of diseases related to autotaxin activity, comprising same as an active ingredient, in which the piperidine derivative compound exhibits excellent inhibitory activity against autotaxin, and thus can be effectively used in the treatment and prevention of diseases related to autotaxin inhibition, such as fibrotic diseases, inflammatory diseases, autoimmune diseases, respiratory diseases, cardiovascular diseases, metabolic diseases, cancer and cancer metastasis, ocular diseases, cholestatic form and other forms of chronic pruritus, and acute or chronic organ transplant rejection.

Abstract: Provided are a piperidine derivative compound, a hydrate thereof, a solvate thereof, or a pharmaceutically acceptable salt thereof; and a pharmaceutical composition for the prevention or treatment of diseases related to autotaxin activity, comprising same as an active ingredient, in which the piperidine derivative compound exhibits excellent inhibitory activity against autotaxin, and thus can be effectively used in the treatment and prevention of diseases related to autotaxin inhibition, such as fibrotic diseases, inflammatory diseases, autoimmune diseases, respiratory diseases, cardiovascular diseases, metabolic diseases, cancer and cancer metastasis, ocular diseases, cholestatic form and other forms of chronic pruritus, and acute or chronic organ transplant rejection.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating inflammatory bowel disease acting as a functional antagonist for S1PR1 and S1PR4 of S1P receptors, and more specifically, to a pharmaceutical composition including, as an active ingredient, a sphingolipid compound which does not cause cardiovascular side effects by acting as a functional antagonist for S1PR1 and S1PR4 and has an effect of preventing or treating inflammatory bowel disease.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating alopecia areata acting as a functional antagonist for SIP receptor's subtypes S1PR1 and S1PR4, and more particularly, relates to a pharmaceutical composition containing as an active ingredient a sphingolipid compound acting as a functional antagonist for S1PR1 and S1PR4, does not cause cardiovascular side effects, and is effective in preventing or treating alopecia areata.

Abstract: A semiconductor memory device includes a cell substrate, a plurality of gate electrodes sequentially stacked on the cell substrate and extending in a first direction, first and second channel structures extending in a second direction different from the first direction and penetrating the plurality of gate electrodes, and a bit line disposed on the plurality of gate electrodes. The first and second channel structures each include a ferroelectric layer, a channel layer, a gate insulating layer and a back gate electrode, which are sequentially disposed on side walls of the plurality of gate electrodes. The first channel structure and the second channel structure are adjacent to each other in the first direction and share a bit line.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating alopecia areata acting as a functional antagonist for S1P receptor's subtypes S1PR1 and S1PR4, and more particularly, relates to a pharmaceutical composition containing as an active ingredient a sphingolipid compound acting as a functional antagonist for S1PR1 and S1PR4, does not cause cardiovascular side effects, and is effective in preventing or treating alopecia areata.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating inflammatory bowel disease acting as a functional antagonist for S1PR1 and S1PR4 of S1P receptors, and more specifically, to a pharmaceutical composition including, as an active ingredient, a sphingolipid compound which does not cause cardiovascular side effects by acting as a functional antagonist for S1PR1 and S1PR4 and has an effect of preventing or treating inflammatory bowel disease.

Abstract: A semiconductor device comprises a substrate that extends in first and second directions and includes a cell region and an extension region that extends from the cell region in the first direction, first and second insulating layers alternately stacked on the substrate in a third direction, a conductive line disposed on one sidewall of the second insulating layer in the second direction, a conductive pillar that extends in the third direction and penetrates through the first insulating layer, a semiconductor layer disposed on one sidewall of the conductive pillar and that extends in the third direction, and a ferroelectric layer disposed between the conductive line and the semiconductor layer and that extends in the third direction. The conductive line includes first and second conductive patterns spaced apart from each other in the second direction, and the second insulating layer is disposed between the first and second conductive patterns.

Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

Abstract: A method of programming a non-volatile memory includes executing at least two program loops on memory cells in a selected word line, generating a fail bit trend based on a result of executing each of the at least two program loops, predicting a plurality of program loops comprising an N program loop to be executed last on the memory cells, based on the generated fail bit trend, and changing, based on a result of predicting the plurality of program loops, a level of an N program voltage provided to the memory cells when the N program loop is executed.

Abstract: A method of programming a non-volatile memory includes executing at least two program loops on memory cells in a selected word line, generating a fail bit trend based on a result of executing each of the at least two program loops, predicting a plurality of program loops comprising an N program loop to be executed last on the memory cells, based on the generated fail bit trend, and changing, based on a result of predicting the plurality of program loops, a level of an N program voltage provided to the memory cells when the N program loop is executed.

Abstract: The present invention relates to a heterocyclic compound represented by Chemical Formula 1 that can be used for the prevention or treatment of diseases caused by abnormality in a PRS (prolyl-tRNA synthetase) activity, or a pharmaceutically acceptable salt thereof, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

Abstract: A vertical semiconductor device includes a plurality of channel connection patterns, a lower insulation layer, a supporting layer, a stacked structure, and a channel structure. The channel connection patterns, on which the lower insulation layer is formed, contact a substrate. The supporting layer is formed on the lower insulation layer to be spaced apart from the channel connection patterns, and includes polysilicon doped with impurities. The stacked structure is formed on the supporting layer, and includes insulation layers and gate electrodes to form a memory cell string. The channel structure passes through the stacked structure, the supporting layer and the lower insulation layer, and includes a charge storage structure and a channel which contacts the channel connection patterns. The charge storage structure and the channel face the gate electrodes and the supporting layer. The supporting layer serves as a gate of a gate induced drain leakage (GIDL) transistor.

Abstract: A fusion protein comprising factor VII (FVII) and transferrin according to the present invention has an improved specific activity of FVII compared to existing FVII fusion proteins comprising other fusion partners than transferrin, and thus can be effectively used in a therapy using FVII.

Abstract: A vertical semiconductor device includes a plurality of channel connection patterns, a lower insulation layer, a supporting layer, a stacked structure, and a channel structure. The channel connection patterns, on which the lower insulation layer is formed, contact a substrate. The supporting layer is formed on the lower insulation layer to be spaced apart from the channel connection patterns, and includes polysilicon doped with impurities. The stacked structure is formed on the supporting layer, and includes insulation layers and gate electrodes to form a memory cell string. The channel structure passes through the stacked structure, the supporting layer and the lower insulation layer, and includes a charge storage structure and a channel which contacts the channel connection patterns. The charge storage structure and the channel face the gate electrodes and the supporting layer. The supporting layer serves as a gate of a gate induced drain leakage (GIDL) transistor.

Abstract: The present invention relates to a heterocyclic compound represented by Chemical Formula 1 that can be used for the prevention or treatment of diseases caused by abnormality in a PRS (prolyl-tRNA synthetase) activity, or a pharmaceutically acceptable salt thereof, a method for preparing the same, and a pharmaceutical composition comprising the same.

Abstract: The present invention provides a novel 2-pyridyl substituted imidazole derivative, or a pharmaceutically acceptable salt or solvate thereof, which selectively inhibits the transforming growth factor-? (TGF-?) type I receptor (ALK5) and/or the activin type I receptor (ALK4); a pharmaceutical composition comprising same as an active ingredient; and a use of the 2-pyridyl substituted imidazole derivative for the manufacture of a medicament for preventing or treating a disease mediated by ALK5 and/or ALK4 receptors in a mammal.