Patents by Inventor Bongsang Kim

Bongsang Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10906802
    Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: February 2, 2021
    Assignee: InvenSense, Inc.
    Inventors: Daesung Lee, Dongyang Kang, Chienlu Chang, Bongsang Kim, Alan Cuthbertson
  • Patent number: 10829367
    Abstract: Provided herein is an apparatus including a cavity in a first side of a first silicon wafer, and an oxide layer on the first side and in the cavity. A first side of a second silicon wafer is bonded to the first side of the first silicon wafer. A gap control structure is on a second side of the second silicon wafer, and a MEMS structure in the second silicon wafer. A eutectic bond is bonding the second side of the second silicon wafer to a third silicon wafer. A lower cavity is between the second side of the silicon wafer and the third silicon wafer, wherein the gap control structure is outside of the lower cavity and the eutectic bond.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: November 10, 2020
    Assignee: InvenSense, Inc.
    Inventors: Jong Il Shin, Peter Smeys, Bongsang Kim
  • Patent number: 10794728
    Abstract: A device and method for a MEMS device with at least one sensor is disclosed. A thermal element is disposed in the MEMS device to selectively adjust a temperature of the MEMS device. A calibration operation is initiated for the sensor to determine a correction value to be applied to the sensor measurement based on the temperature. The correction value is stored.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: October 6, 2020
    Assignee: invensense, Inc.
    Inventors: Wesley James Emmanouel Teskey, Nim Hak Tea, Bongsang Kim, Chunchieh Huang
  • Patent number: 10745270
    Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: August 18, 2020
    Assignee: InvenSense, Inc.
    Inventors: Daesung Lee, Dongyang Kang, Chienlu Chang, Bongsang Kim, Alan Cuthbertson
  • Patent number: 10692761
    Abstract: Selectively controlling application of a self-assembled monolayer (SAM) coating on a substrate of a device is presented herein. A method comprises: forming a material on a first substrate; removing a selected portion of the material from a defined contact area of the first substrate; forming a SAM coating on the material and the defined contact area—the SAM coating comprising a first adhesion force with respect to the material and a second adhesion force with respect to the defined contact area, and the first adhesion force being less than the second adhesion force; removing the SAM coating that has been formed on the material; and attaching the first substrate to the second substrate—the first substrate being positioned across from the second substrate, and the SAM coating that has been formed on the defined contact area being positioned across from a bump stop of the second substrate.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: June 23, 2020
    Assignee: INVENSENSE, INC.
    Inventors: Bongsang Kim, Joseph Seeger
  • Publication number: 20200131031
    Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.
    Type: Application
    Filed: June 13, 2019
    Publication date: April 30, 2020
    Inventors: Daesung LEE, Dongyang KANG, Chienlu CHANG, Bongsang KIM, Alan CUTHBERTSON
  • Publication number: 20200131027
    Abstract: A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.
    Type: Application
    Filed: August 14, 2019
    Publication date: April 30, 2020
    Inventors: Dongyang KANG, Bongsang KIM, Bei ZHU, Ian FLADER
  • Publication number: 20200131033
    Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.
    Type: Application
    Filed: June 13, 2019
    Publication date: April 30, 2020
    Inventors: Daesung LEE, Dongyang KANG, Chienlu CHANG, Bongsang KIM, Alan CUTHBERTSON
  • Patent number: 10631401
    Abstract: A modular deformable electronics platform is attachable to a deformable surface, such as skin. The platform is tolerant to surface deformation and motion, can flex in and out of a plane of the platform without hindering operability of electrical components included on the platform, and is formed via arrangement of discrete flexible tiles, with corners of adjacent tiles connected by a flexible connection material so that individual tiles can translate and rotate relative to each other. Interconnects disposed on bases of separate tiles electrically connect adjacent tiles via their connected corners, and electrically connect components disposed on different tiles. Each pair of adjacent corner connections defines an axis about which at least a portion of the platform can flex without deformation and without hindering connections between tiles. The flexible material and/or bases of the tiles can include Parylene.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: April 21, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Seow Yuen Yee, Gary Yama, Bongsang Kim, Ashwin Samarao
  • Patent number: 10537022
    Abstract: A flexible electronic system includes a flexible electronic substrate having a first and second contact pads opposed to each other, one of the first and second contact pads is electrically coupled to a battery. A protective cover is disposed on the flexible electronic substrate. The flexible electronic system further includes a base support fixedly attached to the flexible electronic substrate, the base support having an adhesive surface opposed to the flexible electronic substrate, and a foil having a first portion removably coupled to at least a portion of the adhesive surface and a second portion, wherein the foil configures to permit a removal of the second portion disposed between the first and second contact pads and wherein the removal of the second portion activates the system.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: January 14, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Christian Peters, Seow Yuen Yee, Bongsang Kim
  • Publication number: 20200004210
    Abstract: Disclosed herein is an automatic control artificial intelligence device including a collection unit configured to acquire an output value according to control of a control system; and an artificial intelligence unit operably coupled to the collection unit and configured to: communicate with the collection unit; set at least one of one or more base lines and a reward based on a gap between the one or more base lines and the output value, according to a plurality of operation goals of the control system; and update a control function for providing a control value to the control system by performing reinforcement learning based on the gap between the one or more base lines and the output value.
    Type: Application
    Filed: June 27, 2019
    Publication date: January 2, 2020
    Applicant: LG ELECTRONICS INC.
    Inventor: Bongsang KIM
  • Publication number: 20200005185
    Abstract: An artificial intelligence device is disclosed. In an embodiment, the artificial intelligence device includes a sensor configured to acquire an output value according to control of a control system, and an artificial intelligence unit comprising one or more processors configured to obtain one or more updated parameters of a control function of the control system based on the output value using reinforcement learning, and update the control function for providing a control value to the control system with the one or more updated parameters.
    Type: Application
    Filed: June 27, 2019
    Publication date: January 2, 2020
    Applicant: LG ELECTRONICS INC.
    Inventor: Bongsang KIM
  • Patent number: 10505006
    Abstract: A method includes depositing a silicon layer over a first oxide layer that overlays a first silicon substrate. The method further includes depositing a second oxide layer over the silicon layer to form a composite substrate. The composite substrate is bonded to a second silicon substrate to form a micro-electro-mechanical system (MEMS) substrate. Holes within the second silicon substrate are formed by reaching the second oxide layer of the composite substrate. The method further includes removing a portion of the second oxide layer through the holes to release MEMS features. The MEMS substrate may be bonded to a CMOS substrate.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: December 10, 2019
    Assignee: InvenSense, Inc.
    Inventors: Bongsang Kim, Jongwoo Shin, Joseph Seeger, Logeeswaran Veerayah Jayaraman, Houri Johari-Galle
  • Publication number: 20190341305
    Abstract: Selectively controlling application of a self-assembled monolayer (SAM) coating on a substrate of a device is presented herein. A method comprises: forming a material on a first substrate; removing a selected portion of the material from a defined contact area of the first substrate; forming a SAM coating on the material and the defined contact area—the SAM coating comprising a first adhesion force with respect to the material and a second adhesion force with respect to the defined contact area, and the first adhesion force being less than the second adhesion force; removing the SAM coating that has been formed on the material; and attaching the first substrate to the second substrate—the first substrate being positioned across from the second substrate, and the SAM coating that has been formed on the defined contact area being positioned across from a bump stop of the second substrate.
    Type: Application
    Filed: April 17, 2019
    Publication date: November 7, 2019
    Inventors: Bongsang KIM, Joe SEEGER
  • Publication number: 20190330052
    Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.
    Type: Application
    Filed: July 8, 2019
    Publication date: October 31, 2019
    Inventors: Daesung Lee, Jeff Chunchieh Huang, Jongwoo Shin, Bongsang Kim, Logeeswaran Veerayah Jayaraman
  • Publication number: 20190262865
    Abstract: A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.
    Type: Application
    Filed: February 7, 2019
    Publication date: August 29, 2019
    Inventors: Emad Mehdizadeh, Bongsang Kim, Chienliu Chang, Leonardo Baldasarre, Nikhil Apte, Xiaoyue Jiang, Mei-Lin Chan
  • Patent number: 10384930
    Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: August 20, 2019
    Assignee: INVENSENSE, INC.
    Inventors: Daesung Lee, Jeff Chunchieh Huang, Jongwoo Shin, Bongsang Kim, Logeeswaran Veerayah Jayaraman
  • Publication number: 20190241432
    Abstract: Provided herein is an apparatus including a cavity in a first side of a first silicon wafer, and an oxide layer on the first side and in the cavity. A first side of a second silicon wafer is bonded to the first side of the first silicon wafer. A gap control structure is on a second side of the second silicon wafer, and a MEMS structure in the second silicon wafer. A eutectic bond is bonding the second side of the second silicon wafer to a third silicon wafer. A lower cavity is between the second side of the silicon wafer and the third silicon wafer, wherein the gap control structure is outside of the lower cavity and the eutectic bond.
    Type: Application
    Filed: April 19, 2019
    Publication date: August 8, 2019
    Inventors: Jong Il SHIN, Peter SMEYS, Bongsang KIM
  • Publication number: 20190185317
    Abstract: A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.
    Type: Application
    Filed: November 30, 2018
    Publication date: June 20, 2019
    Inventors: Jongwoo Shin, Houri Johari-Galle, Bongsang Kim, Joseph Seeger, Dongyang Kang
  • Patent number: 10317211
    Abstract: In one embodiment, a sensor includes a rigid wafer outer body. A first cavity is located within the rigid wafer outer body, and a first vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity. A second vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity, and a first sensor packaging is supported by the first vibration isolating spring and the second vibration isolating spring within the first cavity.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: June 11, 2019
    Assignee: Robert Bosch GmbH
    Inventors: Bongsang Kim, Ando Feyh, Andrew Graham, Gary O'Brien, Michael Baus, Ralf Maier, Mariusz Koc