Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.

Abstract: An electronic device and a control method therefor are disclosed. The present invention comprises: a camera; a memory for storing user face authentication information and an authentication pattern; and a control unit for recognizing a face from an image acquired through the camera, performing a first authentication that determines whether the recognized face matches the face authentication information, tracking the movement of a gaze of the recognized face when the first authentication is completed, and performing a second authentication that determines whether the movement of the gaze matches the authentication pattern. According to the present invention, a dual authentication step using the face authentication information and the movement of the gaze of the user can be conveniently performed.

Abstract: Disclosed herein is an automatic control artificial intelligence device including a collection unit configured to acquire an output value according to control of a control system; and an artificial intelligence unit operably coupled to the collection unit and configured to: communicate with the collection unit; set at least one of one or more base lines and a reward based on a gap between the one or more base lines and the output value, according to a plurality of operation goals of the control system; and update a control function for providing a control value to the control system by performing reinforcement learning based on the gap between the one or more base lines and the output value.

Abstract: A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.

Abstract: An apparatus for generating a temperature prediction model is disclosed. The apparatus for generating a temperature prediction model includes the temperature prediction model configured to provide a simulation environment, and a processor configured to set a hyperparameter of the temperature prediction model, train the temperature prediction model, in which the hyperparameter is set, so that the temperature prediction model, in which the hyperparameter is set, outputs a predicted temperature, update the hyperparameter on the basis of a difference between the predicted temperature, which is outputted from the trained temperature prediction model, and an actual temperature, and repeat the setting of the hyperparameter, the training of the temperature prediction model, and the updating of the hyperparameter on the basis of the difference between the predicted temperature and the actual temperature by a predetermined number of times or more to set a final hyperparameter of the temperature prediction model.

Abstract: An artificial intelligence device is disclosed. In an embodiment, the artificial intelligence device includes a sensor configured to acquire an output value according to control of a control system, and an artificial intelligence unit comprising one or more processors configured to obtain one or more updated parameters of a control function of the control system based on the output value using reinforcement learning, and update the control function for providing a control value to the control system with the one or more updated parameters.

Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.

Abstract: An apparatus for generating a temperature prediction model is disclosed. The apparatus for generating a temperature prediction model includes the temperature prediction model configured to provide a simulation environment, and a processor configured to set a hyperparameter of the temperature prediction model, train the temperature prediction model, in which the hyperparameter is set, so that the temperature prediction model, in which the hyperparameter is set, outputs a predicted temperature, update the hyperparameter on the basis of a difference between the predicted temperature, which is outputted from the trained temperature prediction model, and an actual temperature, and repeat the setting of the hyperparameter, the training of the temperature prediction model, and the updating of the hyperparameter on the basis of the difference between the predicted temperature and the actual temperature by a predetermined number of times or more to set a final hyperparameter of the temperature prediction model.

Abstract: A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.

Abstract: A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

Abstract: An electronic device and a control method therefor are disclosed. The present invention comprises: a camera; a memory for storing user face authentication information and an authentication pattern; and a control unit for recognizing a face from an image acquired through the camera, performing a first authentication that determines whether the recognized face matches the face authentication information, tracking the movement of a gaze of the recognized face when the first authentication is completed, and performing a second authentication that determines whether the movement of the gaze matches the authentication pattern. According to the present invention, a dual authentication step using the face authentication information and the movement of the gaze of the user can be conveniently performed.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

Abstract: Provided herein is an apparatus including a cavity in a first side of a first silicon wafer, and an oxide layer on the first side and in the cavity. A first side of a second silicon wafer is bonded to the first side of the first silicon wafer. A gap control structure is on a second side of the second silicon wafer, and a MEMS structure in the second silicon wafer. A eutectic bond is bonding the second side of the second silicon wafer to a third silicon wafer. A lower cavity is between the second side of the silicon wafer and the third silicon wafer, wherein the gap control structure is outside of the lower cavity and the eutectic bond.

Abstract: A device and method for a MEMS device with at least one sensor is disclosed. A thermal element is disposed in the MEMS device to selectively adjust a temperature of the MEMS device. A calibration operation is initiated for the sensor to determine a correction value to be applied to the sensor measurement based on the temperature. The correction value is stored.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

Abstract: Selectively controlling application of a self-assembled monolayer (SAM) coating on a substrate of a device is presented herein. A method comprises: forming a material on a first substrate; removing a selected portion of the material from a defined contact area of the first substrate; forming a SAM coating on the material and the defined contact area—the SAM coating comprising a first adhesion force with respect to the material and a second adhesion force with respect to the defined contact area, and the first adhesion force being less than the second adhesion force; removing the SAM coating that has been formed on the material; and attaching the first substrate to the second substrate—the first substrate being positioned across from the second substrate, and the SAM coating that has been formed on the defined contact area being positioned across from a bump stop of the second substrate.

Abstract: A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.

Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

Abstract: A modular deformable electronics platform is attachable to a deformable surface, such as skin. The platform is tolerant to surface deformation and motion, can flex in and out of a plane of the platform without hindering operability of electrical components included on the platform, and is formed via arrangement of discrete flexible tiles, with corners of adjacent tiles connected by a flexible connection material so that individual tiles can translate and rotate relative to each other. Interconnects disposed on bases of separate tiles electrically connect adjacent tiles via their connected corners, and electrically connect components disposed on different tiles. Each pair of adjacent corner connections defines an axis about which at least a portion of the platform can flex without deformation and without hindering connections between tiles. The flexible material and/or bases of the tiles can include Parylene.