Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

Abstract: Provided herein is a method including forming a cavity in a first side of a first silicon wafer. An oxide layer is formed on the first side and in the cavity. The first side of the first silicon wafer is bonded to a first side of a second silicon wafer, and a gap control structure is deposited on a second side of the second silicon wafer. A MEMS structure is formed in the second silicon wafer. The second side of the second silicon wafer is eutecticly bonded to the third silicon wafer, and the eutectic bonding includes pressing the second silicon wafer to the third silicon wafer.

Abstract: A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.

Abstract: A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.

Abstract: In one embodiment, A MEMS sensor assembly includes a substrate, a first sensor supported by the substrate and including a first absorber spaced apart from the substrate, and a second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate.

Abstract: A modally driven oscillating element periodically contacts one of more electrical contacts, thereby acting as a switch, otherwise known as a resonant switch, or “resoswitch”, with very high Q's, typically above 10000 in air, and higher in vacuum. Due to periodic constrained contacting of the contacts, the bandwidth of the switch is greatly improved. One or more oscillating elements may be vibrationally interconnected with conductive or nonconductive coupling elements, whereby increased bandwidths of such an overall switching system may be achieved. Using the resoswitch, power amplifiers and converters more closely approaching ideal may be implemented. Integrated circuit fabrication techniques may construct the resoswitch with other integrated CMOS elements for highly compact switching devices. Through introduction of specific geometries within the oscillating elements, displacement gains may be made where modal deflections are greatly increased, thereby reducing device drive voltages to 2.5 V or lower.

Abstract: In one embodiment, A MEMS sensor assembly includes a substrate, a first sensor supported by the substrate and including a first absorber spaced apart from the substrate, and a second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate.

Abstract: A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

Abstract: An ovenized micro-electro-mechanical system (MEMS) resonator including: a substantially thermally isolated mechanical resonator cavity; a mechanical oscillator coupled to the mechanical resonator cavity; and a heating element formed on the mechanical resonator cavity.

Abstract: Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.

Abstract: A modally driven oscillating element periodically contacts one of more electrical contacts, thereby acting as a switch, otherwise known as a resonant switch, or “resoswitch”, with very high Q's, typically above 10000 in air, and higher in vacuum. Due to periodic constrained contacting of the contacts, the bandwidth of the switch is greatly improved. One or more oscillating elements may be vibrationally interconnected with conductive or nonconductive coupling elements, whereby increased bandwidths of such an overall switching system may be achieved. Using the resoswitch, power amplifiers and converters more closely approaching ideal may be implemented. Integrated circuit fabrication techniques may construct the resoswitch with other integrated CMOS elements for highly compact switching devices. Through introduction of specific geometries within the oscillating elements, displacement gains may be made where modal deflections are greatly increased, thereby reducing device drive voltages to 2.5 V or lower.

Abstract: Mechanical transducers such as pressure sensors, resonators or other frequency-reference devices are implemented under conditions characterized by different temperatures. According to an example embodiment of the present invention, a combination of materials is implemented for mechanical transducer applications to mitigate temperature-related changes at or near a selected turnover temperature. In one application, a material property mismatch is used to facilitate single-anchor transducer applications, such as for resonators. Another application is directed to a Silicon-Silicon dioxide combination of materials.

Abstract: Mechanical transducers such as pressure sensors, resonators or other frequency-reference devices are implemented under conditions characterized by different temperatures. According to an example embodiment of the present invention, a combination of materials is implemented for mechanical transducer applications to mitigate temperature-related changes. In one application, a material property mismatch is used to facilitate single-anchor transducer applications, such as for resonators. Another application is directed to a Silicon-Silicon dioxide combination of materials.

Abstract: Mechanical transducers such as pressure sensors, resonators or other frequency-reference devices are implemented under conditions characterized by different temperatures. According to an example embodiment of the present invention, a combination of materials is implemented for mechanical transducer applications to mitigate temperature-related changes at or near a selected turnover temperature. In one application, a material property mismatch is used to facilitate single-anchor transducer applications, such as for resonators. Another application is directed to a Silicon-Silicon dioxide combination of materials.

Abstract: Mechanical transducers such as pressure sensors, resonators or other frequency-reference devices are implemented under conditions characterized by different temperatures. According to an example embodiment of the present invention, a combination of materials is implemented for mechanical transducer applications to mitigate temperature-related changes. In one application, a material property mismatch is used to facilitate single-anchor transducer applications, such as for resonators. Another application is directed to a Silicon-Silicon dioxide combination of materials.