Patents by Inventor Boon Teik CHAN
Boon Teik CHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170141199Abstract: A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a dielectric region. A conformal layer of a first dielectric material is deposited directly on the patterned substrate. A layer of a sacrificial material is deposited overlying the conformal layer of the first dielectric material. The sacrificial material is patterned, whereby a part of the semiconductor region remains covered by the patterned sacrificial material. A layer of a second dielectric material is deposited on the patterned substrate, thereby completely covering the patterned sacrificial material. A recess is formed in the second dielectric material by completely removing the patterned sacrificial material. The exposed conformal layer of the first dielectric material is removed selectively to the semiconductor region.Type: ApplicationFiled: November 8, 2016Publication date: May 18, 2017Applicant: IMEC VZWInventors: Steven Demuynck, Zheng Tao, Boon Teik Chan, Liesbeth Witters, Marc Schaekers, Antony Premkumar Peter, Silvia Armini
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Publication number: 20170103889Abstract: A method for producing a pillar structure in a semiconductor layer, the method including providing a structure including, on a main surface, a semiconductor layer. A patterned hard mask layer stack is provided on the semiconductor layer that includes a first layer in contact with the semiconductor layer and a second layer overlying and in contact with the first layer. The semiconductor layer is etched using the patterned hard mask layer stack as a mask. The etching includes subjecting the structure to a first plasma thereby removing a first part of the semiconductor layer and at least a part of the second layer while preserving the first layer thereby, producing a first part of the pillar structure, thereafter; and subjecting the structure to a second plasma thereby removing a second part of the semiconductor layer thereby, producing a second part of the pillar structure.Type: ApplicationFiled: September 7, 2016Publication date: April 13, 2017Applicant: IMEC VZWInventors: Boon Teik Chan, Vasile Paraschiv, Efrain Altamirano Sanchez, Zheng Tao
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Patent number: 9548208Abstract: A method for patterning an underlying layer is described, the method comprising providing a guiding layer on the underlying layer, the guiding layer comprising guiding structures and being substantially planar; providing a block-copolymer layer on the guiding layer; inducing phase separation of the block-copolymer layer in a regular pattern of structures of a first and a second polymer component, whereby one of the components aligns to the guiding structures, by chemo-epitaxy; thereafter, removing a first of the components of the block-copolymer layers completely, leaving a regular pattern of structures of the second component; providing a planarizing layer over the regular pattern of structures of the second component and the guiding layer; removing a portion of the planarizing layer, thereby leaving a regular pattern of structures of the planarizing layer at positions in between the structures of the second component, and exposing the structures of the second component; removing the structures of the secondType: GrantFiled: February 17, 2016Date of Patent: January 17, 2017Assignee: IMEC VZWInventors: Boon Teik Chan, Zheng Tao, Nadia Vandenbroeck, Safak Sayan
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Publication number: 20160322461Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.Type: ApplicationFiled: July 7, 2016Publication date: November 3, 2016Applicant: IMEC VZWInventors: Boon Teik Chan, Safak Sayan, Min-Soo Kim, Doni Parnell, Roel Gronheid
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Patent number: 9478611Abstract: An example semiconductor structure comprises a first surface and at least one nanowire, the at least one nanowire being perpendicular to the first surface, wherein the first surface is defect-poor and is made of a doped III-V semiconductor material, wherein the at least one nanowire is defect-poor and made of an undoped III-V semiconductor material having a lattice mismatch with the material of the first surface of from about 0% to 1%.Type: GrantFiled: May 18, 2015Date of Patent: October 25, 2016Assignee: IMEC VZWInventors: Boon Teik Chan, Clement Merckling
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Patent number: 9437488Abstract: A method is provided for fabricating a semiconductor device that includes providing a structure with a sacrificial layer having at least one through-hole exposing a metal surface and, optionally, an oxide surface. In one example, the method may include applying a self-assembled monolayer selectively on the exposed metal surface and/or on the oxide surface. The method may also include growing a metal on the self-assembled monolayer and on the exposed metal surface if no self-assembled monolayer is present thereon, so as to fill the at least one through-hole, thereby forming at least one metal structure. The method may further include replacing the first sacrificial layer by a replacement dielectric layer having a dielectric constant of at most 3.9.Type: GrantFiled: November 12, 2015Date of Patent: September 6, 2016Assignee: IMEC VZWInventors: Boon Teik Chan, Silvia Armini, Frederic Lazzarino
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Publication number: 20160254161Abstract: A method for patterning an underlying layer is described, the method comprising providing a guiding layer on the underlying layer, the guiding layer comprising guiding structures and being substantially planar; providing a block-copolymer layer on the guiding layer; inducing phase separation of the block-copolymer layer in a regular pattern of structures of a first and a second polymer component, whereby one of the components aligns to the guiding structures, by chemo-epitaxy; thereafter, removing a first of the components of the block-copolymer layers completely, leaving a regular pattern of structures of the second component; providing a planarizing layer over the regular pattern of structures of the second component and the guiding layer; removing a portion of the planarizing layer, thereby leaving a regular pattern of structures of the planarizing layer at positions in between the structures of the second component, and exposing the structures of the second component; removing the structures of the secondType: ApplicationFiled: February 17, 2016Publication date: September 1, 2016Applicant: IMEC VZWInventors: Boon Teik Chan, Zheng Tao, Nadia Vandenbroeck, Safak Sayan
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Patent number: 9391141Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.Type: GrantFiled: February 23, 2015Date of Patent: July 12, 2016Assignee: IMEC VZWInventors: Boon Teik Chan, Safak Sayan, Min-Soo Kim, Doni Parnell, Roel Gronheid
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Publication number: 20160155664Abstract: A method is provided for fabricating a semiconductor device that includes providing a structure with a sacrificial layer having at least one through-hole exposing a metal surface and, optionally, an oxide surface. In one example, the method may include applying a self-assembled monolayer selectively on the exposed metal surface and/or on the oxide surface. The method may also include growing a metal on the self-assembled monolayer and on the exposed metal surface if no self-assembled monolayer is present thereon, so as to fill the at least one through-hole, thereby forming at least one metal structure. The method may further include replacing the first sacrificial layer by a replacement dielectric layer having a dielectric constant of at most 3.9.Type: ApplicationFiled: November 12, 2015Publication date: June 2, 2016Applicant: IMEC VZWInventors: Boon Teik Chan, Silvia Armini, Frederic Lazzarino
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Publication number: 20160118295Abstract: A method for forming contact vias includes providing a substrate comprising a plurality of contact structures embedded in a first dielectric layer, the contacts abutting an upper surface of the first dielectric layer. The method also includes providing a second dielectric layer on the upper surface of the first dielectric layer, and providing contact vias in the second dielectric layer by patterning the second dielectric layer at least at positions corresponding to the contact structures, wherein patterning the second dielectric layer comprises using a DSA patterning technique.Type: ApplicationFiled: October 21, 2015Publication date: April 28, 2016Applicant: IMEC VZWInventors: Boon Teik Chan, Safak Sayan
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Patent number: 9263288Abstract: A method for lithography is disclosed. The method includes obtaining a self-organizing block-copolymer layer on a neutral layer overlying a substrate, the self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, the self-organizing block-copolymer layer furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components. Further, the method includes etching selectively a first polymer component of the self-organizing block-copolymer layer, thereby remaining a second polymer component. Still further, the method includes applying a plasma etching to the neutral layer using the second polymer component as a mask, wherein the plasma etching comprises an inert gas and H2.Type: GrantFiled: November 7, 2013Date of Patent: February 16, 2016Assignees: IMEC, Tokyo Electron LimitedInventors: Boon Teik Chan, Shigeru Tahara
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Publication number: 20150333122Abstract: An example semiconductor structure comprises a first surface and at least one nanowire, the at least one nanowire being perpendicular to the first surface, wherein the first surface is defect-poor and is made of a doped III-V semiconductor material, wherein the at least one nanowire is defect-poor and made of an undoped III-V semiconductor material having a lattice mismatch with the material of the first surface of from about 0% to 1%.Type: ApplicationFiled: May 18, 2015Publication date: November 19, 2015Applicant: IMEC VZWInventors: Boon Teik Chan, Clement Merckling
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Publication number: 20150243509Abstract: A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a semiconductor substrate covered with a shallow trench isolation (STI) layer stack on a side thereof; defining a fin area on that side of the substrate by performing a lithographic patterning step other than DSA, wherein the fin structures will be produced in the fin area; and producing the fin structures in the semiconductor substrate within the fin area according to a predetermined fin pattern using DSA lithographic patterning. The disclosure also relates to associated semiconductor structures.Type: ApplicationFiled: February 23, 2015Publication date: August 27, 2015Applicant: IMEC VZWInventors: Boon Teik Chan, Safak Sayan, Min-Soo Kim, Doni Parnell, Roel Gronheid
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Patent number: 9023733Abstract: The present disclosure relates to a method (10) for block-copolymer lithography. This method comprises the step of obtaining (12) a self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, and the steps of applying at least once each of first plasma etching (14) of said self-organizing block-copolymer layer using a plasma formed from a substantially ashing gas, and second plasma etching (16) of said self-organizing block-copolymer layer using plasma formed from a pure inert gas or mixture of inert gases in order to selectively remove a first polymer phase. A corresponding intermediate product also is described.Type: GrantFiled: September 26, 2013Date of Patent: May 5, 2015Assignees: IMEC, Tokyo Electron LimitedInventors: Boon Teik Chan, Shigeru Tahara
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Publication number: 20140131839Abstract: A method for lithography is disclosed. The method includes obtaining a self-organizing block-copolymer layer on a neutral layer overlying a substrate, the self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, the self-organizing block-copolymer layer furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components. Further, the method includes etching selectively a first polymer component of the self-organizing block-copolymer layer, thereby remaining a second polymer component. Still further, the method includes applying a plasma etching to the neutral layer using the second polymer component as a mask, wherein the plasma etching comprises an inert gas and H2.Type: ApplicationFiled: November 7, 2013Publication date: May 15, 2014Applicants: Tokyo Electron Limited, IMECInventors: Boon Teik Chan, Shigeru Tahara
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Publication number: 20140091435Abstract: The present disclosure relates to a method (10) for block-copolymer lithography. This method comprises the step of obtaining (12) a self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, and the steps of applying at least once each of first plasma etching (14) of said self-organizing block-copolymer layer using a plasma formed from a substantially ashing gas, and second plasma etching (16) of said self-organizing block-copolymer layer using plasma formed from a pure inert gas or mixture of inert gases in order to selectively remove a first polymer phase. A corresponding intermediate product also is described.Type: ApplicationFiled: September 26, 2013Publication date: April 3, 2014Applicants: Tokyo Electron Limited, IMECInventors: Boon Teik Chan, Shigeru Tahara
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Patent number: 8492285Abstract: A dry etching method for texturing a surface of a substrate is disclosed. The method includes performing a first dry etching onto the surface of the substrate thereby forming a surface texture with spikes and valleys, the first dry etching comprising etching the surface of the substrate in a plasma comprising fluorine (F) radicals and oxygen (O) radicals, wherein the plasma comprises an excess of oxygen (O) radicals. The method may further include performing a second dry etching onto the surface texture thereby smoothening the surface texture, the second dry etching comprising chemical isotropic etching the surface texture, obtained after the first dry etching, in a plasma comprising fluorine (F) radicals, wherein the spikes are etched substantially faster than the valleys.Type: GrantFiled: September 15, 2011Date of Patent: July 23, 2013Assignee: IMECInventor: Boon Teik Chan
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Publication number: 20120060915Abstract: A dry etching method for texturing a surface of a substrate is disclosed. The method includes performing a first dry etching onto the surface of the substrate thereby forming a surface texture with spikes and valleys, the first dry etching comprising etching the surface of the substrate in a plasma comprising fluorine (F) radicals and oxygen (O) radicals, wherein the plasma comprises an excess of oxygen (O) radicals. The method may further include performing a second dry etching onto the surface texture thereby smoothening the surface texture, the second dry etching comprising chemical isotropic etching the surface texture, obtained after the first dry etching, in a plasma comprising fluorine (F) radicals, wherein the spikes are etched substantially faster than the valleys.Type: ApplicationFiled: September 15, 2011Publication date: March 15, 2012Applicant: IMECInventor: Boon Teik CHAN