Abstract: Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.

Abstract: A substrate processing apparatus and a substrate processing method are provided. The substrate processing apparatus includes a chamber having a first housing and a second housing that are combined with each other to form a processing space inside, and a housing actuator that moves the first housing to open or close the processing space. The housing actuator includes a plurality of cylinder units coupled to the first housing, a fluid supplier that supplies a fluid for operating the plurality of cylinder units, and a deviation corrector that corrects an operation deviation between the plurality of cylinder units. The deviation corrector corrects the operation deviation between the plurality of cylinder units coupled to the chamber, thereby minimizing particles that are generated when the chamber is opened/closed.

Abstract: Provided are an apparatus and a method for treating a substrate at a high-pressure atmosphere. The apparatus for treating the substrate includes a first body and a second body combined with each other to define a treatment space in which the substrate is treated, a sealing member interposed between the first body and the second body to seal the treatment space from an outside at a position in which the first body is in close contact with the second body, and a driving member to drive the first body or the second body such that the treatment space is open or closed. The sealing member is positioned in a sealing groove formed in the first body. The sealing member is deformed to be in close contact with the second body by pressure of the treatment space when a process is performed.

Abstract: Provided are an apparatus and a method for treating a substrate at a high-pressure atmosphere. The apparatus for treating the substrate includes a first body and a second body combined with each other to define a treatment space in which the substrate is treated, a sealing member interposed between the first body and the second body to seal the treatment space from an outside at a position in which the first body is in close contact with the second body, and a driving member to drive the first body or the second body such that the treatment space is open or closed. The sealing member is positioned in a sealing groove formed in the first body. The sealing member is deformed to be in close contact with the second body by pressure of the treatment space when a process is performed.

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Abstract: The apparatus includes a chamber having a first body and a second body that are combined with each other to form a processing space inside, an actuator that moves a relative position between the first body and the second body to enable a position change between a closed position in which the processing space is sealed from the outside and an open position in which the processing space is open to the outside, the actuator to sequentially perform a high-speed closing step of moving the first body or the second body at a first speed and a low-speed closing step of moving the first body or the second body at a second speed lower than the first speed, at the time of the position change from the open position to the closed position.

Abstract: Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Abstract: Embodiments of the inventive concept relate to an apparatus for treating a substrate in a high-pressure atmosphere. The apparatus includes a process chamber having an upper body and a lower body that are combined with each other to provide a treatment space therein, an elevation member configured to elevate any one of the upper body and the lower body to an opening location at which the upper body and the lower body is spaced apart or a closing location at which the upper body and the lower body is attached, a clamping member configured to clamp the upper body and the lower body located at the closing location, and a movable member configured to move the clamping member to a locking location at which the clamping member clamps the process chamber or to the release location at which the clamping member is spaced apart from the process chamber.

Abstract: The apparatus includes a chamber having a first body and a second body that are combined with each other to form a processing space inside, an actuator that moves a relative position between the first body and the second body to enable a position change between a closed position in which the processing space is sealed from the outside and an open position in which the processing space is open to the outside, the actuator to sequentially perform a high-speed closing step of moving the first body or the second body at a first speed and a low-speed closing step of moving the first body or the second body at a second speed lower than the first speed, at the time of the position change from the open position to the closed position.

Abstract: Disclosed are a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a chamber having a first housing and a second housing that are combined with each other to form a processing space inside, and a housing actuator that moves the first housing to open or close the processing space. The housing actuator includes a plurality of cylinder units coupled to the first housing, a fluid supply unit that supplies a fluid for operating the plurality of cylinder units, and a deviation correction unit that corrects an operation deviation between the plurality of cylinder units. The deviation correction unit corrects the operation deviation between the plurality of cylinder units coupled to the chamber, thereby minimizing particles that are generated when the chamber is opened/closed.

Abstract: Provided are an apparatus and a method for treating a substrate at a high-pressure atmosphere. The apparatus for treating the substrate includes a first body and a second body combined with each other to define a treatment space in which the substrate is treated, a sealing member interposed between the first body and the second body to seal the treatment space from an outside at a position in which the first body is in close contact with the second body, and a driving member to drive the first body or the second body such that the treatment space is open or closed. The sealing member is positioned in a sealing groove formed in the first body. The sealing member is deformed to be in close contact with the second body by pressure of the treatment space when a process is performed.

Abstract: Disclosed is a substrate drying apparatus of substrate processing apparatus including a chamber that provides a space for processing a substrate, and a fluid supply unit that supplies a process fluid to the chamber, wherein the liquid supply unit includes a supply tank in which the fluid is stored, a supply line that connects the supply tank and the chamber, a branch line branched from a first point of the supply line and connected to a second point of the supply line, and a temperature control unit that adjusts the temperature of the fluid such that the temperatures of the fluids flowing through the supply line and the branch line between the first point and the second point are different.

Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Abstract: Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.

Abstract: Embodiments of the inventive concept relate to an apparatus for treating a substrate in a high-pressure atmosphere. The apparatus includes a process chamber having an upper body and a lower body that are combined with each other to provide a treatment space therein, an elevation member configured to elevate any one of the upper body and the lower body to an opening location at which the upper body and the lower body is spaced apart or a closing location at which the upper body and the lower body is attached, a clamping member configured to clamp the upper body and the lower body located at the closing location, and a movable member configured to move the clamping member to a locking location at which the clamping member clamps the process chamber or to the release location at which the clamping member is spaced apart from the process chamber.

Abstract: Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.

Abstract: Provided is an apparatus and method for drying a substrate. The apparatus includes a housing, a substrate support member, a fluid supply member, and a discharge member. The housing provides a space in which a drying process is performed. The substrate support member is provided in the housing to support the substrate. The fluid supply member includes a supply line for supplying a process fluid of a supercritical state to the housing. The discharge member includes a discharge line for discharging the process fluid from the housing. Here, the supply line includes a first supply line provided to supply the process fluid to the housing at a first supply flow rate, and a second supply line provided to supply the process fluid to the housing at a second supply flow rate.

Abstract: Disclosed is a substrate drying apparatus of substrate processing apparatus including a chamber that provides a space for processing a substrate, and a fluid supply unit that supplies a process fluid to the chamber, wherein the liquid supply unit includes a supply tank in which the fluid is stored, a supply line that connects the supply tank and the chamber, a branch line branched from a first point of the supply line and connected to a second point of the supply line, and a temperature control unit that adjusts the temperature of the fluid such that the temperatures of the fluids flowing through the supply line and the branch line between the first point and the second point are different.