Abstract: This invention provides an air disinfecting device for disinfecting or decontaminate air, which comprises a first metal plate and a second metal plate opposite to the first metal plate, a UVC LED mounted on the first metal plate, and a power supply providing power to the UVC LED. The second metal plate has an area large enough such that lights emitted from the UVC LED will be enclosed inside the air disinfection device.

Abstract: This invention provides an air disinfecting device for disinfecting or decontaminate air, which comprises a first metal plate and a second metal plate opposite to the first metal plate, a UVC LED mounted on the first metal plate, and a power supply providing power to the UVC LED. The second metal plate has an area large enough such that lights emitted from the UVC LED will be enclosed inside the air disinfection device.

Abstract: An optical system includes a collimated light source, a beam splitter, two mirrors and two lenses, a focus lens, and a detector. An initial light beam is generated by the light source and then separated by the beam splitter into a first light beam and a second light beam. The two mirrors respectively direct the first and second light beams on a sample with symmetrical paths and the two lenses focus the first and second light beam on the sample respectively. The first and second light beams are reflected from the sample and along the counterpart paths to the beam splitter. An interfered light beam is then generated by combining the reflected first and second light beams, and focused by a focus lens on a detector. A Dove prism can be configured between one mirror and one lens of the two for contrast enhancement. It can produce the photon combination with same of direction in this setup to enhance contrast.

Abstract: An optical system includes a collimated light source, a beam splitter, two mirrors and two lenses, a focus lens, and a detector. An initial light beam is generated by the light source and then separated by the beam splitter into a first light beam and a second light beam. The two mirrors respectively direct the first and second light beams on a sample with symmetrical paths and the two lenses focus the first and second light beam on the sample respectively. The first and second light beams are reflected from the sample and along the counterpart paths to the beam splitter. An interfered light beam is then generated by combining the reflected first and second light beams, and focused by a focus lens on a detector. A Dove prism can be configured between one mirror and one lens of the two for contrast enhancement. It can produce the photon combination with same of direction in this setup to enhance contrast.

Abstract: By using chip-by-chip, mainly separation technology, micro LED can be made very accurately and efficiently. First, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Second, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip is fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can be also provided as LED display substrate.

Abstract: An optical system includes a collimated light source, a beam splitter, two mirrors and two lenses, a focus lens, and a detector. An initial light beam is generated by the light source and then separated by the beam splitter into a first light beam and a second light beam. The two mirrors respectively direct the first and second light beams on a sample with symmetrical paths and the two lenses focus the first and second light beam on the sample respectively. The first and second light beams are reflected from the sample and along the counterpart paths to the beam splitter. An interfered light beam is then generated by combining the reflected first and second light beams, and focused by a focus lens on a detector. A Dove prism can be configured between one mirror and one lens of the two for contrast enhancement. It can produce the photon combination with same of direction in this setup to enhance contrast.

Abstract: By using chip-by-chip, mainly separation technology, micro LED can be made very accurately and efficiently. First, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Second, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip is fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can be also provided as LED display substrate.

Abstract: By using chip-by-chip, mainly separation technology, micro LED display can be made very accurately and efficiently. Firstly, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Secondly, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip can be fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can also be provided as LED display substrate. A light conversion layer and color defining layer can be patterned and sequentially formed on each LED chip individually to provide a LED display.

Abstract: By using chip-by-chip, mainly separation technology, micro LED can be made very accurately and efficiently. First, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Second, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip is fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can be also provided as LED display substrate.

Abstract: The present invention relates to a LED light bulb, which at least includes: a bulb base; an insulation part formed with an accommodation space; a power module disposed in the accommodation space and electrically connected to the bulb base; a support post; a light source module disposed on top of the support post and electrically connected to the power module, and including a light-pervious substrate and plural lighting units, the periphery and the top of the lighting unit and the backside of the light-pervious substrate defined at the lighting unit and the periphery of the lighting unit are further provided with a phosphor coating; and a lampshade configured to transmit light originating from the blue light source module. Accordingly, the LED light bulb provided by the present invention can achieve the omnidirectional output.

Abstract: An LED lighting assembly includes a concave reflector, a supporter located in a central region of the concave reflector, and multiple LEDs mounted on the supporter. The supporter has a first face and a second face, and an angle is formed between the first face and the second face.

Abstract: A planar LED lighting apparatus includes a housing and multiple LEDs. The housing includes a reflective face and a light output surface opposing the reflective face. The multiple LEDs are mounted on sidewalls of the housing, and the axial light of the multiple LEDs is incident on the reflective face.

Abstract: A planar LED lighting apparatus includes a housing and multiple LEDs. The housing includes a reflective face and a light output surface opposing the reflective face. The multiple LEDs are mounted on sidewalls of the housing, and the axial light of the multiple LEDs is incident on the reflective face.

Abstract: An LED lighting assembly includes a concave reflector, a supporter located in a central region of the concave reflector, and multiple LEDs mounted on the supporter. The supporter has a first face and a second face, and an angle is formed between the first face and the second face.

Abstract: A solid state lighting device, including: a housing, which has a reflective cup inside; a solid state light source, placed inside the housing; a transparent adhesive material, used to seal the solid state light source in the housing; and a multi-layer fluorescent structure, placed on the transparent adhesive material and having a fluorescent layer or a phosphor layer sandwiched by two transparent adhesive layers, so as to absorb light beams from the solid state light source and then emit light of longer wavelengths.

Abstract: A planar LED lighting apparatus includes a housing and multiple LEDs. The housing includes a reflective body and a light output surface opposing the reflective body. The multiple LEDs are mounted on sidewalls of the housing, and light from the multiple LEDs is reflected by the reflective body to travel toward the light output surface.

Abstract: LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.

Abstract: A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device.

Abstract: A method for manufacturing GaN LED devices is disclosed herein. First, a LED epitaxial layer is formed on a provisional substrate. Part of the LED epitaxial layer is removed to form a plurality of LED epitaxial areas. Then, a first transparent conductive layer, a metal reflective layer, and a first metal bonding layer are sequentially formed on the plurality of LED epitaxial areas and then part of the first transparent conductive layer, the metal reflective layer, and the first metal bonding layer are removed. Next, a permanent substrate is provided. At least a metal layer and a second metal bonding layer are formed on the permanent substrate. Then, part of at least the metal layer and the second metal bonding layer are removed. Next, the provisional substrate is bonded to the permanent substrate by aligned wafer bonding method. Then, the provisional substrate is removed to expose a surface of the LED epitaxial layer and then an n-type electrode is formed on the surface.

Abstract: A method for forming an opto-electronic device through low temperature processes is provided. An active layer is bonded to a substrate by a common adhesive to maintain or increase the luminous efficiency of the opto-electronic because the electric conductive elements of the opto-electronic are formed on the active layer by a solid phase regrowth process through a low temperature processe.