Abstract: The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.

Abstract: The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape.

Abstract: The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of the second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape.

Abstract: A light emitting diode is made by a compound semiconductor in which light emitting from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the active region is improved by adding light and electron reflectors in the light emitting diode. These InGaAlP-based layers are grown epitaxially by Organometallic Vapor-Phase Epitaxy (OMVPE) on a GaAs substrate with a misorientation angle toward <111>A to improve the quality and surface morphology of the epilayer and performance in light emitting. The lower cladding layer of first conductivity type forms on a misoriented substrate with the same type of conductivity. Light transparent and current diffusion layers with a second conductivity is formed on top of the upper cladding layer for the spreading of current and expansion of the emission light.

Abstract: A light emitting diode is made by a compound semiconductor in which light emitting from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the active region is improved by adding light and electron reflectors in the light emitting diode. These InGaAlP-based layers are grown epitaxially by Organometallic Vapor-Phase Epitaxy (OMVPE) on a GaAs substrate with a misorientation angle toward <111>A to improve the quality and surface morphology of the epilayer and performance in light emitting. The lower cladding layer of first conductivity type forms on a misoriented substrate with the same type of conductivity. Light transparent and current diffusion layers with a second conductivity is formed on top of the upper cladding layer for the spreading of current and expansion of the emission light.

Abstract: A method for repeatably fabricating GaAs/ZnSe and other III-V/II-VI semiconductor interfaces with relatively low stacking fault densities in II-VI semiconductor devices such as laser diodes. The method includes providing a molecular beam epitaxy (MBE) system including at least a group III element source, a group II element source, a group V element source and a group VI element source. A semiconductor substrate having a III-V semiconductor surface on which the interface is to be fabricated is positioned within the MBE system. The substrate is then heated to a temperature suitable for III-V semiconductor growth, and a crystalline III-V semiconductor buffer layer grown on the III-V surface of the substrate. The temperature of the semiconductor substrate is then adjusted to a temperature suitable for II-VI semiconductor growth, and a crystalline II-VI semiconductor buffer layer grown on the III-V buffer layer by alternating beam epitaxy.