Abstract: Methods are provided for treating a subject for a condition caused by an abnormality in the subject's autonomic nervous system. In accordance with the subject methods, at least a portion of a subject's autonomic nervous system is pharmacologically modulated with at least one beta-blocker in a manner that is effective to treat the subject for the condition. The subject methods find use in the treatment of a variety of different conditions, where such conditions include various disease conditions. Also provided are systems and kits for use in practicing the subject methods.

Abstract: Methods are provided for treating a subject for a condition caused by an abnormality in the subject's autonomic nervous system. In accordance with the subject methods, at least a portion of a subject's autonomic nervous system is pharmacologically modulated with at least one beta-blocker in a manner that is effective to treat the subject for the condition. The subject methods find use in the treatment of a variety of different conditions, where such conditions include various disease conditions. Also provided are systems and kits for use in practicing the subject methods.

Abstract: Methods are provided for treating a subject for a condition by modulating at least a portion of the subject's autonomic nervous system. In accordance with certain embodiments of the subject methods, at least a portion of a subject's autonomic nervous system is electrically or pharmacologically modulated in a manner that is effective to treat the subject for the condition. The subject methods find use in the treatment of a variety of different conditions, where such conditions include various disease conditions. Also provided are systems and kits for use in practicing the subject methods.

Abstract: Disclosed herein is a method of processing a device, comprising providing a substrate having a buffer layer disposed on a back side and forming an outer protection layer over the back side of the buffer layer, forming a thermal layer on the back side of the outer protection layer and heating the substrate through the thermal layer and the back side of the outer protective layer. A back side protection layer may be formed on the back side of the buffer layer. The thermal layer has a thermal emissivity coefficient of about 0.7 or greater and a thickness greater than a roughness of the back side of the outer protection layer. The back side protection layer is an oxide with a thickness between about 20 angstroms and about 50 angstroms. The outer protection layer is a nitride with a thickness between about 50 angstroms and about 300 angstroms.

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a gate structure over a substrate and forming source and drain regions adjacent to the gate structure. The method also includes forming a first ILD layer surrounding the gate structure over the source and drain regions and forming a contact modulation structure over the gate structure. The method also includes etching the first ILD layer and the contact modulation structure to form a first contact trench over the source and drain regions and a second contact trench over the gate structure. The method further includes forming a first contact in the first contact trench and a second contact in the second contact trench. In addition, the first ILD layer has a first etching rate and the contact modulation structure has a second etching rate that is less than the first etching rate.

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes forming a gate structure over a substrate and forming source and drain regions adjacent to the gate structure. The method also includes forming a first ILD layer surrounding the gate structure over the source and drain regions and forming a contact modulation structure over the gate structure. The method also includes etching the first ILD layer and the contact modulation structure to form a first contact trench over the source and drain regions and a second contact trench over the gate structure. The method further includes forming a first contact in the first contact trench and a second contact in the second contact trench. In addition, the first ILD layer has a first etching rate and the contact modulation structure has a second etching rate that is less than the first etching rate.

Abstract: Disclosed herein is a method of processing a device, comprising providing a substrate having a buffer layer disposed on a back side and forming an outer protection layer over the back side of the buffer layer, forming a thermal layer on the back side of the outer protection layer and heating the substrate through the thermal layer and the back side of the outer protective layer. A back side protection layer may be formed on the back side of the buffer layer. The thermal layer has a thermal emissivity coefficient of about 0.7 or greater and a thickness greater than a roughness of the back side of the outer protection layer. The back side protection layer is an oxide with a thickness between about 20 angstroms and about 50 angstroms. The outer protection layer is a nitride with a thickness between about 50 angstroms and about 300 angstroms.

Abstract: A system and method of designing a layout for a plurality of different logic operation (LOP) cell technologies includes defining a priority for each LOP cell technology in the plurality of different LOP technologies and forming a layout of the plurality of different LOP cells for formation on a substrate with at least some of the LOP cells of higher priority LOP technologies overlapping LOP cells of lower priority LOP technologies. The system can include a processor coupled to memory where stored code defines the priority for each different cell technology in the plurality of LOP cells and (when the code is executed) the processor forms the layout of a plurality of different LOP cells. All of the LOP cells of higher priority LOP technologies overlap LOP cells of lower priority. The system or method also avoids the overlap of higher priority LOP cells by lower priority LOP cells.

Abstract: Disclosed herein is a method of processing a device, comprising providing a substrate having a buffer layer disposed on a back side and forming an outer protection layer over the back side of the buffer layer, forming a thermal layer on the back side of the outer protection layer and heating the substrate through the thermal layer and the back side of the outer protective layer. A back side protection layer may be formed on the back side of the buffer layer. The thermal layer has a thermal emissivity coefficient of about 0.7 or greater and a thickness greater than a roughness of the back side of the outer protection layer. The back side protection layer is an oxide with a thickness between about 20 angstroms and about 50 angstroms. The outer protection layer is a nitride with a thickness between about 50 angstroms and about 300 angstroms.

Abstract: An integrated circuit (IC) design method includes providing a design layout of the IC and placing a first cell and a second cell into the design layout. The second cell is a mirror of the first cell. The method further includes dividing the first cell into a first plurality of segments and dividing the second cell into a second plurality of segments. A third cell is formed by connecting a first portion of the first plurality of segments with a first portion of the second plurality of segments. A fourth cell is formed by connecting a second portion of the first plurality of segments with a second portion of the second plurality of segments. The first, second, third and fourth cells each have substantially the same function.

Abstract: An integrated circuit (IC) design method includes providing a design layout of the IC and placing a first cell and a second cell into the design layout. The second cell is a minor of the first cell. The method further includes dividing the first cell into a first plurality of segments and dividing the second cell into a second plurality of segments. A third cell is formed by connecting a first portion of the first plurality of segments with a first portion of the second plurality of segments. A fourth cell is formed by connecting a second portion of the first plurality of segments with a second portion of the second plurality of segments. The first, second, third and fourth cells each have substantially the same function.

Abstract: Methods for treating a disease condition in a subject are provided. The subject methods are characterizing by enhancing at least one symptom of the disease condition in a manner effective to cause the subject to mount a compensatory response effective to treat the disease condition. Also provided are compositions, kits and systems for practicing the subject methods.

Abstract: A system and method of designing a layout for a plurality of different logic operation (LOP) cell technologies includes defining a priority for each LOP cell technology in the plurality of different LOP technologies and forming a layout of the plurality of different LOP cells for formation on a substrate with at least some of the LOP cells of higher priority LOP technologies overlapping LOP cells of lower priority LOP technologies. The system can include a processor coupled to memory where stored code defines the priority for each different cell technology in the plurality of LOP cells and (when the code is executed) the processor forms the layout of a plurality of different LOP cells. All of the LOP cells of higher priority LOP technologies overlap LOP cells of lower priority. The system or method also avoids the overlap of higher priority LOP cells by lower priority LOP cells.

Abstract: A guard ring for a through via, and a method of manufacture thereof, is provided. The guard ring comprises one or more rings around a through via, wherein the rings may be, for example, circular, rectangular, octagon, elliptical, square, or the like. The guard ring may be formed from a contact through an inter-layer dielectric layer and interconnect structures (e.g., vias and lines) extending through the inter-metal dielectric layers. The guard ring may contact a well formed in the substrate.

Abstract: Disclosed herein is a method of processing a device, comprising providing a substrate having a buffer layer disposed on a back side and forming an outer protection layer over the back side of the buffer layer, forming a thermal layer on the back side of the outer protection layer and heating the substrate through the thermal layer and the back side of the outer protective layer. A back side protection layer may be formed on the back side of the buffer layer. The thermal layer has a thermal emissivity coefficient of about 0.7 or greater and a thickness greater than a roughness of the back side of the outer protection layer. The back side protection layer is an oxide with a thickness between about 20 angstroms and about 50 angstroms. The outer protection layer is a nitride with a thickness between about 50 angstroms and about 300 angstroms.

Abstract: Methods for treating a disease condition in a subject are provided. The subject methods are characterizing by enhancing at least one symptom of the disease condition in a manner effective to cause the subject to mount a compensatory response effective to treat the disease condition. Also provided are compositions, kits and systems for practicing the subject methods.

Abstract: Methods for treating a disease condition in a subject are provided. The subject methods are characterizing by enhancing at least one symptom of the disease condition in a manner effective to cause the subject to mount a compensatory response effective to treat the disease condition. Also provided are compositions, kits and systems for practicing the subject methods.

Abstract: Methods are provided for treating a subject for at least one condition that includes inflammation, a blood clotting condition and autonomic nervous system dysfunction such as adrenergia, e.g., simultaneously. Also provided are kits for use in practicing the subject methods.

Abstract: Methods are provided for treating a subject for at least one condition that includes inflammation, a blood clotting condition and autonomic nervous system dysfunction such as adrenergia, e.g., simultaneously. Also provided are kits for use in practicing the subject methods.

Abstract: An integrated circuit including a first transistor having a first gate dielectric layer with a first thickness. The integrated circuit also includes a second transistor having a second gate dielectric layer with a second thickness and the second transistor is configured to electrically connect to the first transistor. The integrated circuit also includes a third transistor having a third gate dielectric layer with a third thickness and the third transistor is configured to electrically connect to at least one of the first transistor or the second transistor. The first thickness, the second thickness and the third thickness of the integrated circuit are all different.