Abstract: A gas-permeable package lid of a chip package structure and a manufacturing method thereof are provided. The gas-permeable package lid of the chip package structure includes a lid body, a through hole, and a hydrophobic gas-permeable membrane. The lid body is integrally formed. The through hole penetrates the lid body. The hydrophobic gas-permeable membrane is bonded to the lid body and shields the through hole. A part of the hydrophobic gas-permeable membrane is embedded in the lid body.

Abstract: A gas-permeable package lid of a chip package structure and a manufacturing method thereof are provided. The gas-permeable package lid of the chip package structure includes a lid body, an air hole, and a hydrophobic gas-permeable membrane. The lid body is integrally formed with an encapsulation material and has a body portion and a plurality of anchors. The air hole penetrates the body portion of the lid body. The hydrophobic gas-permeable membrane is bonded to the lid body and has a shielding part shielding the air hole and an embedded part embedded in the lid body. The embedded part has an upper surface and a lower surface. The upper surface and the lower surface respectively have a plurality of recesses. The anchors are respectively located in the recesses.

Abstract: A reference element of an infrared sensor includes a substrate, a sacrificial layer, a supporting structure, a fence structure and an infrared sensing structure. The sacrificial layer is disposed on the substrate. The supporting structure is disposed on the substrate wherein the top surface of the supporting structure is coplanar with the top surface of the sacrificial layer. The fence structure is disposed on the substrate and surrounds the sacrificial layer wherein the top surface of the fence structure is coplanar with the top surface of the sacrificial layer, and there is an air gap between the fence structure and the supporting structure. The infrared sensing structure is disposed on the sacrificial layer, the supporting structure and the fence structure, and the infrared sensing structure has an opening corresponding to the air gap.

Abstract: A gas detector includes: a substrate, a heater, a first resistor and a second resistor. The heater is disposed on the substrate. The first resistor is disposed on the heater, and has a first resistance value associated with a target gas. The second resistor is connected in series with the first resistor and is disposed on the substrate, wherein the first resistor and the second resistor are formed in the same manufacturing process and in the same shape.

Abstract: A microelectromechanical sensor includes a base, a heater provided on the base, and a sensing electrode including a sensing portion. The heater includes a heating portion. The heater and the sensing electrode are provided at different layers in a stacking direction, and the sensing electrode is electrically insulated from the heater. On a reference plane in the stacking direction, a projection of the sensing portion of the sensing electrode is entirely covered by a projection of the heating portion of the heater.

Abstract: The disclosure relates to a microelectromechanical apparatus including a substrate, a stationary electrode, a movable electrode, and a heater. The substrate includes an upper surface, an inner bottom surface, and an inner side surface. The inner side surface surrounds and connects with the inner bottom surface. The inner side surface and the inner bottom surface define a recess. The stationary electrode is disposed on the inner bottom surface. The movable electrode covers the recess. The movable electrode, the inner bottom surface, and the inner side surface define a hermetic chamber. The heater is disposed on the movable electrode and located above the hermetic chamber.

Abstract: A microelectromechanical sensor includes a base, a heater provided on the base, and a sensing electrode including a sensing portion. The heater includes a heating portion. The heater and the sensing electrode are provided at different layers in a stacking direction, and the sensing electrode is electrically insulated from the heater. On a reference plane in the stacking direction, a projection of the sensing portion of the sensing electrode is entirely covered by a projection of the heating portion of the heater.

Abstract: A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.

Abstract: A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.

Abstract: A MEMS infrared sensing device includes a substrate and an infrared sensing component. The infrared sensing component is provided above the substrate. The infrared sensing component includes a sensing plate and at least one supporting element. The sensing plate includes at least one infrared absorbing layer, an infrared sensing layer, a sensing electrode and a plurality of metallic elements. The sensing plate has a plurality of openings. The metallic elements respectively surround the openings. The sensing electrode is connected with the infrared sensing layer, and the metallic elements are spaced apart from one another. The supporting element connecting the sensing plate with the substrate.

Abstract: A sensing device is provided. The sensing device includes a plurality of infrared thermosensitive elements and a plurality of resistor-capacitor (RC) oscillators. The plurality of infrared thermosensitive elements are arranged in an array. Each of the plurality of infrared thermosensitive elements has a resistance value which changes with a temperature of the infrared thermosensitive element by absorbing infrared radiation and generates a sensing voltage corresponding to the resistance value. The plurality of RC oscillators are coupled to the plurality of infrared thermosensitive elements to receive the corresponding sensing values, respectively. Each of the plurality of RC oscillators generates a digital sensing signal according to the corresponding sensing value to indicate the temperature of the corresponding infrared thermosensitive element. Each of the plurality of RC oscillators is disposed under the corresponding infrared thermosensitive element.

Abstract: A microelectromechanical heating device includes a substrate, a thermal insulator, and a heater. The thermal insulator includes a plurality of supporting structures and at least one thermal insulation layer. The supporting structures are disposed on the substrate. The thermal insulation layer is located above the substrate and connected to the plurality of supporting structures. The thermal insulation layer is spaced apart from the substrate by a distance. The heater is disposed on the at least one thermal insulation layer.

Abstract: A microelectromechanical infrared sensing device is provided, which includes a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of stoppers. The second supporting elements are connected to the sensing plate, such that the sensing plate is suspended above the substrate. The reflecting plate is disposed between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate, such that the reflecting plate is suspended between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the stoppers contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.

Abstract: A microelectromechanical infrared sensing device is provided, which includes a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of stoppers. The second supporting elements are connected to the sensing plate, such that the sensing plate is suspended above the substrate. The reflecting plate is disposed between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate, such that the reflecting plate is suspended between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the stoppers contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.

Abstract: A microelectromechanical infrared sensing apparatus includes a substrate, a sensing plate, a plurality of supporting elements and a plurality of stoppers. The substrate includes an infrared reflecting layer. The sensing plate includes an infrared absorbing layer. The supporting elements are disposed on the substrate, and each of the supporting elements is connected to the sensing plate, such that the sensing plate is suspended above the infrared reflecting layer. The stoppers are disposed between the substrate and the sensing plate. When the sensing plate moves toward the infrared reflecting layer and the stoppers contact both the substrate and the sensing plate, the distance between the sensing plate and the infrared reflecting layer is substantially equal to the height of at least one of the stoppers.

Abstract: The disclosure relates to a microelectromechanical apparatus including a substrate, a stationary electrode, a movable electrode, and a heater. The substrate includes an upper surface, an inner bottom surface, and an inner side surface. The inner side surface surrounds and connects with the inner bottom surface. The inner side surface and the inner bottom surface define a recess. The stationary electrode is disposed on the inner bottom surface. The movable electrode covers the recess. The movable electrode, the inner bottom surface, and the inner side surface define a hermetic chamber. The heater is disposed on the movable electrode and located above the hermetic chamber.

Abstract: A microelectromechanical infrared sensing apparatus includes a substrate, a sensing plate, a plurality of supporting elements and a plurality of stoppers. The substrate includes an infrared reflecting layer. The sensing plate includes an infrared absorbing layer. The supporting elements are disposed on the substrate, and each of the supporting elements is connected to the sensing plate, such that the sensing plate is suspended above the infrared reflecting layer. The stoppers are disposed between the substrate and the sensing plate. When the sensing plate moves toward the infrared reflecting layer and the stoppers contact both the substrate and the sensing plate, the distance between the sensing plate and the infrared reflecting layer is substantially equal to the height of at least one of the stoppers.

Abstract: A sensing device is provided. The sensing device includes a plurality of infrared thermosensitive elements and a plurality of resistor-capacitor (RC) oscillators. The plurality of infrared thermosensitive elements are arranged in an array. Each of the plurality of infrared thermosensitive elements has a resistance value which changes with a temperature of the infrared thermosensitive element by absorbing infrared radiation and generates a sensing voltage corresponding to the resistance value. The plurality of RC oscillators are coupled to the plurality of infrared thermosensitive elements to receive the corresponding sensing values, respectively. Each of the plurality of RC oscillators generates a digital sensing signal according to the corresponding sensing value to indicate the temperature of the corresponding infrared thermosensitive element. Each of the plurality of RC oscillators is disposed under the corresponding infrared thermosensitive element.

Abstract: A MEMS apparatus with heater includes central part, periphery part, gap and first connecting part. Central part includes center of mass, heater and first joint. Heater is disposed inside central part. First joint is located on boundary of central part. Displacement of first joint is produced when central part is heated by heater. Periphery part surrounds central part. Gap surrounds central part, and is located between central part and periphery part. First connecting part connects central part and periphery part along first reference line and includes first inner connecting portion and first outer connecting portion. First inner connecting portion is connected to first joint. First outer connecting portion is connected to periphery part. First reference line passes through first joint, and first reference line is not parallel to line connecting center of mass and first joint.

Abstract: A MEMS apparatus with heater includes central part, periphery part, gap and first connecting part. Central part includes center of mass, heater and first joint. Heater is disposed inside central part. First joint is located on boundary of central part. Displacement of first joint is produced when central part is heated by heater. Periphery part surrounds central part. Gap surrounds central part, and is located between central part and periphery part. First connecting part connects central part and periphery part along first reference line and includes first inner connecting portion and first outer connecting portion. First inner connecting portion is connected to first joint. First outer connecting portion is connected to periphery part. First reference line passes through first joint, and first reference line is not parallel to line connecting center of mass and first joint.