Patents by Inventor Boris Menchtchikov

Boris Menchtchikov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lithographic Apparatus and Device Manufacturing Method
    Publication number: 20110205520
    Abstract: A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer, thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafer(s). An associated lithographic apparatus is also disclosed.
    Type: Application
    Filed: January 20, 2011
    Publication date: August 25, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Alexander Viktorovych PADIY, Boris Menchtchikov
  • Calibration of Lithographic Apparatus
    Publication number: 20110205515
    Abstract: System parameters are checked through self-assessment of a production wafer without using a reference or a monitor wafer. In particular, the wafer is exposed at different orientations, the data from which provides for the calibration of system parameters.
    Type: Application
    Filed: January 31, 2011
    Publication date: August 25, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Boris Menchtchikov, Alexander Viktorovych Padiy
  • Lithographic Apparatus and Device Manufacturing Method
    Publication number: 20110205511
    Abstract: A method controls scanning function of a lithographic apparatus. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Compensation is performed based on the determination. A different parameterization is used for control of the scanning control module than for communication between the scanning control module and the lithographic apparatus.
    Type: Application
    Filed: January 25, 2011
    Publication date: August 25, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Alexander Viktorovych Padiy, Boris Menchtchikov, Scott Anderson Middlebrooks
  • LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    Publication number: 20100321650
    Abstract: A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and one or more elements to control and/or compensate for evaporation of liquid from the substrate.
    Type: Application
    Filed: August 26, 2010
    Publication date: December 23, 2010
    Applicant: ASML NETHERLANDS B.V.
    Inventors: THEODORUS PETRUS MARIA CADEE, Johannes Henricus Wilhelmus Jacobs, Nicolaas Ten Kate, Erik Roelof Loopstra, Aschwin Lodewijk Hendricus Johannes Vermeer, Jeroen Johannes Sophia Maria Mertens, Christianus Gerardus Maria De Mol, Marcel Johannus Elisabeth Hubertus Muitjens, Antonius Johannus Van Der Net, Joost Jeroen Ottens, Johannes Anna Quaedackers, Mana Elisabeth Reuhman-Huisken, Marco Koert Stavenga, Patricius Aloysius Jacobus Tinnemans, Martinus Comelis Maria Verhagen, Jacobus Johannus Leonardus Hendricus Verspay, Frederik Eduard De Jong, Koen Goorman, Boris Menchtchikov, Herman Boom, Stoyan Nihtianov, Richard Moerman, Martin Frans Pierre Smeets, Bart Leonard Peter Schoondermark, Franciscus Johannes Joseph Janssen, Michel Riepen
  • Lithographic apparatus and device manufacturing method having liquid evaporation control
    Patent number: 7804575
    Abstract: A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and one or more elements to control and/or compensate for evaporation of liquid from the substrate.
    Type: Grant
    Filed: August 17, 2005
    Date of Patent: September 28, 2010
    Assignee: ASML Netherlands B.V.
    Inventors: Theodorus Petrus Maria Cadee, Johannes Henricus Wilhelmus Jacobs, Nicolaas Ten Kate, Erik Roelof Loopstra, Aschwin Lodewijk Hendricus Johannes Vermeer, Jeroen Johannes Sophia Maria Mertens, Christianus Gerardus Maria De Mol, Marcel Johannus Elisabeth Hubertus Muitjens, Antonius Johannus Van Der Net, Joost Jeroen Ottens, Johannes Anna Quaedackers, Maria Elisabeth Reuhman-Huisken, Marco Koert Stavenga, Patricius Aloysius Jacobus Tinnemans, Martinus Cornelis Maria Verhagen, Jacobus Johannus Leonardus Hendricus Verspay, Frederik Eduard De Jong, Koen Goorman, Boris Menchtchikov, Herman Boom, Stoyan Nihtianov, Richard Moerman, Martin Frans Pierre Smeets, Bart Leonard Peter Schoondermark, Franciscus Johannes Joseph Janssen, Michel Riepen
  • Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
    Patent number: 7710538
    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: May 4, 2010
    Assignee: ASML Netherlands B.V.
    Inventors: Boris Menchtchikov, Frederik Eduard De Jong
  • Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device
    Patent number: 7710539
    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: May 4, 2010
    Assignee: ASML Netherlands B.V.
    Inventors: Boris Menchtchikov, Frederik Eduard De Jong
  • Optimized correction of wafer thermal deformations in a lithographic process
    Patent number: 7595496
    Abstract: A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
    Type: Grant
    Filed: June 21, 2007
    Date of Patent: September 29, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Joost Jeroen Ottens, Harmen Klaas Van Der Schoot, Jeroen Pieter Starreveld, Wouterus Johannes Petrus Maria Maas, Willem Jurrianus Venema, Boris Menchtchikov
  • METHOD AND ARRANGEMENT FOR CORRECTING THERMALLY-INDUCED FIELD DEFORMATIONS OF A LITHOGRAPHICALLY EXPOSED SUBSTRATE
    Publication number: 20090055114
    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
    Type: Application
    Filed: October 24, 2008
    Publication date: February 26, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Boris MENCHTCHIKOV, Frederik Eduard De Jong
  • METHOD AND ARRANGEMENT FOR PREDICTING THERMALLY-INDUCED DEFORMATION OF A SUBSTRATE, AND A SEMICONDUCTOR DEVICE
    Publication number: 20090055115
    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
    Type: Application
    Filed: October 24, 2008
    Publication date: February 26, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Boris MENCHTCHIKOV, Frederik Eduard DE JONG
  • Method and arrangement for predicting thermally-induced deformation of a substrate, and a semiconductor device
    Patent number: 7462430
    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
    Type: Grant
    Filed: October 12, 2006
    Date of Patent: December 9, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Boris Menchtchikov, Frederik Eduard De Jong
  • Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
    Patent number: 7462429
    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
    Type: Grant
    Filed: October 12, 2005
    Date of Patent: December 9, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Boris Menchtchikov, Frederik Eduard De Jong
  • Calibration substrate and method for calibrating a lithographic apparatus
    Patent number: 7453063
    Abstract: A calibration substrate for use during calibration of a lithographic apparatus is disclosed. The calibration substrate includes a first substantially flat surface, a second substantially flat surface that is substantially parallel to the first surface, and an edge that connects the first surface to the second surface. The calibration substrate has a thermal expansion coefficient of less than about 1.0×10?6 K?1 to reduce deformation thereof due to thermal changes in the substrate while in the lithographic apparatus.
    Type: Grant
    Filed: December 8, 2004
    Date of Patent: November 18, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Joost Jeroen Ottens, Jeroen Johannes Sophia Maria Mertens, Frederick Eduard De Jong, Koen Goorman, Boris Menchtchikov
  • Method of calibrating a lithographic apparatus and device manufacturing method
    Patent number: 7426011
    Abstract: In calibration of overlay performance of an immersion lithographic apparatus, two sets of overlay data are obtained from exposures carried out using normal and reversed meanders. The two data sets can then be used to eliminate effects due to wafer cooling.
    Type: Grant
    Filed: September 12, 2005
    Date of Patent: September 16, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Koen Jacobus Johannes Maria Zaal, Antonius Johannes De Kort, Frederik Eduard De Jong, Koen Goorman, Boris Menchtchikov, Hermen Folken Pen
  • Lithographic method
    Patent number: 7423725
    Abstract: In calibration of overlay performance of an immersion lithographic apparatus, two sets of overlay data are obtained from exposures carried out using, for example, normal and reversed meanders. The two data sets can then be used to eliminate effects due to substrate cooling.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: September 9, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Koen Jacobus Johannes Maria Zaal, Antonius Johannes De Kort, Frederik Eduard De Jong, Koen Goorman, Boris Menchtchikov, Hermen Folken Pen
  • Lithographic apparatus and device manufacturing method
    Patent number: 7304715
    Abstract: A lithographic apparatus is disclosed. The apparatus includes an illumination system configured to condition a radiation beam, and a support constructed to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The apparatus also includes a substrate table constructed to hold a substrate, a projection system configured to project the patterned radiation beam onto a target portion of the substrate, a liquid supply system configured to at least partly fill a space between the projection system and the substrate with liquid, a seal member arranged to substantially contain the liquid within the space, and elements to control and/or compensate for evaporation of immersion liquid from the substrate.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: December 4, 2007
    Assignee: ASML Netherlands B.V.
    Inventors: Theodorus Petrus Maria Cadee, Joost Jeroen Ottens, Jeroen Johannes Sophia Maria Mertens, Frederick Eduard De Jong, Koen Goorman, Boris Menchtchikov, Marco Koert Stavenga, Martin Frans Pierre Smeets, Aschwin Lodewijk Hendricus Johannes Van Meer, Bart Leonard Peter Schoondermark, Patricius Aloysius Jacobus Tinnemans, Stoyan Nihtianov
  • Optimized correction of water thermal deformations in a lithographic process
    Publication number: 20070257209
    Abstract: A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
    Type: Application
    Filed: June 21, 2007
    Publication date: November 8, 2007
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Joost Ottens, Harmen Schoot, Jeroen Starreveld, Wouterus Maria Maas, Willem Venema, Boris Menchtchikov
  • Optimized correction of wafer thermal deformations in a lithographic process
    Patent number: 7250237
    Abstract: A method and apparatus of correcting thermally-induced field deformations of a lithographically exposed substrate, is presented herein. In one embodiment, the method includes exposing a pattern onto a plurality of fields of a substrate in accordance with pre-specified exposure information and measuring attributes of the fields to assess deformation of the fields induced by thermal effects of the exposing process. The method further includes determining corrective information based on the measured attributes, and adjusting the pre-specified exposure information, based on the corrective information, to compensate for the thermally-induced field deformations. Other embodiments include the use of predictive models to predict thermally-induced effects on the fields and thermographic imaging to determine temperature variations across a substrate.
    Type: Grant
    Filed: December 23, 2003
    Date of Patent: July 31, 2007
    Assignee: ASML Netherlands B.V.
    Inventors: Joost Jeroen Ottens, Harmen Klaas Van Der Schoot, Jeroen Pieter Starreveld, Wouterus Johannes Petrus Maria Maas, Willem Jurrianus Venema, Boris Menchtchikov
  • Method and arrangement for predicting thermally-induced deformation of substrate, and a semiconductor device
    Publication number: 20070090853
    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
    Type: Application
    Filed: October 12, 2006
    Publication date: April 26, 2007
    Applicant: ASML Netherlands B. V.
    Inventors: Boris Menchtchikov, Frederik De Jong
  • Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
    Publication number: 20070082280
    Abstract: The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
    Type: Application
    Filed: October 12, 2005
    Publication date: April 12, 2007
    Applicant: ASML Netherlands B.V.
    Inventors: Boris Menchtchikov, Frederik De Jong